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Class Information
Number: 438/427
Name: Semiconductor device manufacturing: process > Formation of electrically isolated lateral semiconductive structure > Grooved and refilled with deposited dielectric material > Refilling multiple grooves of different widths or depths
Description: Process for making electrically isolated laterally spaced semiconductor regions by grooving and refilling with insulative material wherein grooves of differing widths or depths are filled with insulative material.
Sub-classes under this class:
Patents under this class:
| Patent Number |
Title Of Patent |
Date Issued |
| 7611962 |
Method for fabricating semiconductor device |
Nov. 3, 2009 |
| 7611963 |
Method for forming a multi-layer shallow trench isolation structure in a semiconductor device |
Nov. 3, 2009 |
| 7612427 |
Apparatus for confining inductively coupled surface currents |
Nov. 3, 2009 |
| 7601609 |
Method for manufacturing device isolation film of semiconductor device |
Oct. 13, 2009 |
| 7601608 |
Memory array buried digit line |
Oct. 13, 2009 |
| 7601607 |
Protruded contact and insertion of inter-layer-dielectric material to match damascene hardmask to improve undercut for low-k interconnects |
Oct. 13, 2009 |
| 7595252 |
Method of manufacturing a semiconductor memory device |
Sep. 29, 2009 |
| 7595254 |
Method of manufacturing a semiconductor device |
Sep. 29, 2009 |
| 7579255 |
Semiconductor device and method for isolating the same |
Aug. 25, 2009 |
| 7575981 |
Method for fabricating isolation layer in semiconductor device |
Aug. 18, 2009 |
| 7575992 |
Method of forming micro patterns in semiconductor devices |
Aug. 18, 2009 |
| 7572713 |
Method of fabricating semiconductor device with STI structure |
Aug. 11, 2009 |
| 7560357 |
Method for creating narrow trenches in dielectric materials |
Jul. 14, 2009 |
| 7560359 |
Methods of forming asymmetric recesses and gate structures that fill such recesses and related methods of forming semiconductor devices that include such recesses and gate structures |
Jul. 14, 2009 |
| 7557031 |
Etch back with aluminum CMP for LCOS devices |
Jul. 7, 2009 |
| 7553741 |
Manufacturing method of semiconductor device |
Jun. 30, 2009 |
| 7553767 |
Method for fabricating semiconductor device having taper type trench |
Jun. 30, 2009 |
| 7550363 |
Method of fabricating a semiconductor device having first and second trenches using non-concurrently formed hard mask patterns |
Jun. 23, 2009 |
| 7547610 |
Method of making a semiconductor device comprising isolation trenches inducing different types of strain |
Jun. 16, 2009 |
| 7544582 |
Semiconductor device and method for fabricating the same |
Jun. 9, 2009 |
| 7544592 |
Method for increasing etch rate during deep silicon dry etch |
Jun. 9, 2009 |
| 7534723 |
Methods of forming fine patterns, and methods of forming trench isolation layers using the same |
May. 19, 2009 |
| 7531415 |
Multilayered CMP stop for flat planarization |
May. 12, 2009 |
| 7531409 |
Fabrication method and structure for providing a recessed channel in a nonvolatile memory device |
May. 12, 2009 |
| 7524732 |
Semiconductor device with L-shaped spacer and method of manufacturing the same |
Apr. 28, 2009 |
| 7521333 |
Methods of fabricating trench isolation structures having varying depth |
Apr. 21, 2009 |
| 7514337 |
Semiconductor device using EPI-layer and method of forming the same |
Apr. 7, 2009 |
| 7498226 |
Method for fabricating semiconductor device with step gated asymmetric recess |
Mar. 3, 2009 |
| 7488666 |
Method for manufacturing semiconductor substrate and method for manufacturing semiconductor device |
Feb. 10, 2009 |
| 7485544 |
Strained semiconductor, devices and systems and methods of formation |
Feb. 3, 2009 |
| 7470597 |
Method of fabricating a multilayered dielectric diffusion barrier layer |
Dec. 30, 2008 |
| 7465643 |
Semiconductor device with fixed channel ions |
Dec. 16, 2008 |
| 7439604 |
Method of forming dual gate dielectric layer |
Oct. 21, 2008 |
| 7427553 |
Fabricating method of semiconductor device |
Sep. 23, 2008 |
| 7419878 |
Planarized and silicided trench contact |
Sep. 2, 2008 |
| 7420259 |
Semiconductor device having two-layered charge storage electrode |
Sep. 2, 2008 |
| 7416956 |
Self-aligned trench filling for narrow gap isolation regions |
Aug. 26, 2008 |
| 7396738 |
Method of forming isolation structure of flash memory device |
Jul. 8, 2008 |
| 7396728 |
Methods of improving drive currents by employing strain inducing STI liners |
Jul. 8, 2008 |
| 7393789 |
Protective coating for planarization |
Jul. 1, 2008 |
| 7387940 |
Methods of forming trench isolation in the fabrication of integrated circuitry, methods of fabricating memory circuitry, integrated circuitry and memory integrated circuitry |
Jun. 17, 2008 |
| 7371645 |
Method of manufacturing a field effect transistor device with recessed channel and corner gate device |
May. 13, 2008 |
| 7371655 |
Method of fabricating low-power CMOS device |
May. 13, 2008 |
| 7368800 |
Methods of forming trench isolation in the fabrication of integrated circuitry, methods of fabricating memory circuitry, integrated circuitry and memory integrated circuitry |
May. 6, 2008 |
| 7368365 |
Memory array buried digit line |
May. 6, 2008 |
| 7364980 |
Manufacturing method of semiconductor substrate |
Apr. 29, 2008 |
| 7364981 |
Methods of forming trench isolation in the fabrication of integrated circuitry, methods of fabricating memory circuitry, integrated circuitry and memory integrated circuitry |
Apr. 29, 2008 |
| 7358588 |
Trench isolation type semiconductor device which prevents a recess from being formed in a field region |
Apr. 15, 2008 |
| 7354828 |
Semiconductor device with increased channel length and method for fabricating the same |
Apr. 8, 2008 |
| 7354786 |
Sensor element with trenched cavity |
Apr. 8, 2008 |
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