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Class Information
Number: 438/424
Name: Semiconductor device manufacturing: process > Formation of electrically isolated lateral semiconductive structure > Grooved and refilled with deposited dielectric material
Description: Process for making electrically isolated laterally spaced semiconductor regions including a step of forming a recess or trench in the semiconductive substrate and refilling the same with deposited insulative material.

Sub-classes under this class:

Class Number Class Name Patents
438/430 And deposition of polysilicon or noninsulative material into groove 474
438/429 And epitaxial semiconductor formation in groove 210
438/425 Combined with formation of recessed oxide by localized oxidation 370
438/433 Dopant addition 316
438/435 Multiple insulative layers in groove 713
438/427 Refilling multiple grooves of different widths or depths 648
438/438 Reflow of insulator 123

Patents under this class:

Patent Number Title Of Patent Date Issued
8709901 Method of forming an isolation structure Apr. 29, 2014
8709898 Fabrication method of semiconductor device and fabrication method of dynamic threshold transistor Apr. 29, 2014
8703577 Method for fabrication deep trench isolation structure Apr. 22, 2014
8692266 Circuit substrate structure Apr. 8, 2014
8691659 Method for forming void-free dielectric layer Apr. 8, 2014
8691654 Semiconductor device having stressor film and method of manufacturing semiconductor device Apr. 8, 2014
8691645 Method of manufacturing convex shaped thin-film transistor device Apr. 8, 2014
8686535 Trench isolation implantation Apr. 1, 2014
8686534 Trench isolation structure and method for forming the same Apr. 1, 2014
8680644 Semiconductor device and method for making same Mar. 25, 2014
8680597 Method and apparatus for improving gate contact Mar. 25, 2014
8679940 Methods for fabricating semiconductor devices with isolation regions having uniform stepheights Mar. 25, 2014
8673735 Semiconductor device and method for making same Mar. 18, 2014
8673734 Semiconductor device and method for fabricating the same Mar. 18, 2014
8664079 Method of fabricating semiconductor device by thinning hardmask layers on frontside and backside of substrate Mar. 4, 2014
8664050 Structure and method to improve ETSOI MOSFETS with back gate Mar. 4, 2014
8658536 Selective fin cut process Feb. 25, 2014
8652967 Adjuvant for controlling polishing selectivity and chemical mechanical polishing slurry comprising the same Feb. 18, 2014
8652934 Semiconductor substrate for photonic and electronic structures and method of manufacture Feb. 18, 2014
8652932 Semiconductor devices having fin structures, and methods of forming semiconductor devices having fin structures Feb. 18, 2014
8652931 Method of dual-depth STI formation Feb. 18, 2014
8652911 Semiconductor device and method of manufacturing the same Feb. 18, 2014
8647961 Method for filling cavities in wafers, correspondingly filled blind hole and wafer having correspondingly filled insulation trenches Feb. 11, 2014
8647935 Buried oxidation for enhanced mobility Feb. 11, 2014
8642442 Memory device having three-dimensional gate structure Feb. 4, 2014
8642441 Self-aligned STI with single poly for manufacturing a flash memory device Feb. 4, 2014
8642419 Methods of forming isolation structures for semiconductor devices Feb. 4, 2014
8637935 Semiconductor device including embedded isolation regions and method for forming the same Jan. 28, 2014
8637371 Non-planar MOSFET structures with asymmetric recessed source drains and methods for making the same Jan. 28, 2014
8633113 Method for fabricating a bottom oxide layer in a trench Jan. 21, 2014
8629527 Semiconductor structures Jan. 14, 2014
8629039 Substrate fins with different heights Jan. 14, 2014
8629038 FinFETs with vertical fins and methods for forming the same Jan. 14, 2014
8629037 Forming a protective film on a back side of a silicon wafer in a III-V family fabrication process Jan. 14, 2014
8623742 Reduced STI loss for superior surface planarity of embedded stressors in densely packed semiconductor devices Jan. 7, 2014
8623730 Method for fabricating silicon-on-insulator transistor with self-aligned borderless source/drain contacts Jan. 7, 2014
8617968 Strained silicon and strained silicon germanium on insulator metal oxide semiconductor field effect transistors (MOSFETs) Dec. 31, 2013
8614145 Through substrate via formation processing using sacrificial material Dec. 24, 2013
8614138 Manufacturing method of semiconductor device Dec. 24, 2013
8614130 Integrated circuit guard rings Dec. 24, 2013
8609510 Replacement metal gate diffusion break formation Dec. 17, 2013
8609509 Superior integrity of high-k metal gate stacks by forming STI regions after gate metals Dec. 17, 2013
8609491 Method for fabricating semiconductor device with buried bit lines Dec. 17, 2013
8604535 Non-volatile memory device and method of manufacturing the same Dec. 10, 2013
8603895 Methods of forming isolation structures for semiconductor devices by performing a deposition-etch-deposition sequence Dec. 10, 2013
8603893 Methods for fabricating FinFET integrated circuits on bulk semiconductor substrates Dec. 10, 2013
8603892 Method of manufacturing a semiconductor device Dec. 10, 2013
8603891 Methods for forming vertical memory devices and apparatuses Dec. 10, 2013
8603889 Integrated circuit structure having air-gap trench isolation and related design structure Dec. 10, 2013
8598654 MOSFET device with thick trench bottom oxide Dec. 3, 2013

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