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Class Information
Number: 438/417
Name: Semiconductor device manufacturing: process > Formation of electrically isolated lateral semiconductive structure > Isolation by pn junction only > With epitaxial semiconductor formation > And simultaneous polycrystalline growth
Description: Process for making junction isolated laterally spaced semiconductor regions in which polycrystalline semiconductive regions are deposited simultaneously with the epitaxial deposition.










Patents under this class:

Patent Number Title Of Patent Date Issued
8017426 Color filter array alignment mark formation in backside illuminated image sensors Sep. 13, 2011
7972919 Vertical PNP transistor and method of making same Jul. 5, 2011
7951685 Method for manufacturing semiconductor epitaxial crystal substrate May. 31, 2011
7927956 Method for making a semiconductor structure using silicon germanium Apr. 19, 2011
7799654 Reduced refractive index and extinction coefficient layer for enhanced photosensitivity Sep. 21, 2010
7772074 Method of forming conformal silicon layer for recessed source-drain Aug. 10, 2010
7718498 Semiconductor device and method of producing same May. 18, 2010
7384810 Image display device and method for manufacturing the same Jun. 10, 2008
7297630 Methods of fabricating via hole and trench Nov. 20, 2007
7265010 High performance vertical PNP transistor method Sep. 4, 2007
7253079 Coplanar mounting member for a MEM sensor Aug. 7, 2007
7148511 Active matrix substrate, electro-optical device, electronic device, and method for manufacturing an active matrix substrate Dec. 12, 2006
6596605 Method of forming germanium doped polycrystalline silicon gate of MOS transistor and method of forming CMOS transistor device using the same Jul. 22, 2003
6479306 Method for manufacturing semiconductor device Nov. 12, 2002
6291309 Semiconductor device and method for manufacturing the same Sep. 18, 2001
5849629 Method of forming a low stress polycide conductors on a semiconductor chip Dec. 15, 1998
5145795 Semiconductor device and method therefore Sep. 8, 1992
5134090 Method of fabricating patterned epitaxial silicon films utilizing molecular beam epitaxy Jul. 28, 1992
4949146 Structured semiconductor body Aug. 14, 1990
4861426 Method of making a millimeter wave monolithic integrated circuit Aug. 29, 1989
4583282 Process for self-aligned buried layer, field guard, and isolation Apr. 22, 1986
4573257 Method of forming self-aligned implanted channel-stop and buried layer utilizing non-single crystal alignment key Mar. 4, 1986
3997378 Method of manufacturing a semiconductor device utilizing monocrystalline-polycrystalline growth Dec. 14, 1976











 
 
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