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Class Information
Number: 438/413
Name: Semiconductor device manufacturing: process > Formation of electrically isolated lateral semiconductive structure > Total dielectric isolation > With epitaxial semiconductor formation
Description: Process for making a total dielectric isolation semiconductor structure having a step of epitaxially depositing a semiconductive layer onto the substrate.

Patents under this class:
1 2 3 4 5

Patent Number Title Of Patent Date Issued
8685825 Replacement source/drain finFET fabrication Apr. 1, 2014
8679903 Vertical quadruple conduction channel insulated gate transistor Mar. 25, 2014
8586446 Manufacturing method of semiconductor device Nov. 19, 2013
8546237 Transferring and resizing of epitaxial film arrays and method thereof Oct. 1, 2013
8501577 Preparation method for full-isolated SOI with hybrid crystal orientations Aug. 6, 2013
8481402 Epitaxy silicon on insulator (ESOI) Jul. 9, 2013
8440539 Isolation trench processing for strain control May. 14, 2013
8426291 Method for isolation formation in manufacturing semiconductor device Apr. 23, 2013
8394704 Method for fabricating a dual-orientation group-IV semiconductor substrate Mar. 12, 2013
8338263 Etching narrow, tall dielectric isolation structures from a dielectric layer Dec. 25, 2012
8324063 Epitaxial film growing method, wafer supporting structure and susceptor Dec. 4, 2012
8293623 Epitaxial SiC single crystal substrate and method of manufacture of epitaxial SiC single crystal substrate Oct. 23, 2012
8222075 Nonvolatile semiconductor memory device using a variable resistance film and method of manufacturing the same Jul. 17, 2012
8173497 Semiconductor device preventing floating body effect in a peripheral region thereof and method for manufacturing the same May. 8, 2012
8119494 Defect-free hetero-epitaxy of lattice mismatched semiconductors Feb. 21, 2012
8062948 Method of fabricating transistor for semiconductor device Nov. 22, 2011
8008205 Methods for producing a semiconductor device having planarization films Aug. 30, 2011
7993990 Multiple crystallographic orientation semiconductor structures Aug. 9, 2011
7989306 Method of forming alternating regions of Si and SiGe or SiGeC on a buried oxide layer on a substrate Aug. 2, 2011
7951684 Semiconductor device method of manfacturing a quantum well structure and a semiconductor device comprising such a quantum well structure May. 31, 2011
7947569 Method for producing a semiconductor including a foreign material layer May. 24, 2011
7939422 Methods of thin film process May. 10, 2011
7927962 Semiconductor device having buried insulation films and method of manufacturing the same Apr. 19, 2011
7919381 Germanium substrate-type materials and approach therefor Apr. 5, 2011
7906406 Process for manufacturing a semiconductor wafer having SOI-insulated wells and semiconductor wafer thereby manufactured Mar. 15, 2011
7901968 Heteroepitaxial deposition over an oxidized surface Mar. 8, 2011
7892939 Threshold voltage consistency and effective width in same-substrate device groups Feb. 22, 2011
7875511 CMOS structure including differential channel stressing layer compositions Jan. 25, 2011
7867841 Methods of forming semiconductor devices with extended active regions Jan. 11, 2011
7838388 Method for producing SOI substrate Nov. 23, 2010
7812339 Method for making a semiconductor device including shallow trench isolation (STI) regions with maskless superlattice deposition following STI formation and related structures Oct. 12, 2010
7803690 Epitaxy silicon on insulator (ESOI) Sep. 28, 2010
7790567 Semiconductor device and method for forming the same Sep. 7, 2010
7790566 Semiconductor surface treatment for epitaxial growth Sep. 7, 2010
7772078 Germanium substrate-type materials and approach therefor Aug. 10, 2010
7759213 Pattern independent Si:C selective epitaxy Jul. 20, 2010
7691720 Vertical nanotube semiconductor device structures and methods of forming the same Apr. 6, 2010
7670923 Method of fabricating strain-silicon CMOS Mar. 2, 2010
7615390 Method and apparatus for forming expitaxial layers Nov. 10, 2009
7605025 Methods of forming MOSFETS using crystalline sacrificial structures Oct. 20, 2009
7579262 Different embedded strain layers in PMOS and NMOS transistors and a method of forming the same Aug. 25, 2009
7569438 Method of manufacturing semiconductor device Aug. 4, 2009
7521302 Semiconductor device and method of manufacturing the same Apr. 21, 2009
7510945 Element formation substrate, method of manufacturing the same, and semiconductor device Mar. 31, 2009
7498216 Method of forming high-performance CMOS SOI devices on hybrid crystal-oriented substrates Mar. 3, 2009
7495313 Germanium substrate-type materials and approach therefor Feb. 24, 2009
7492017 Semiconductor transistor having a stressed channel Feb. 17, 2009
7485539 Strained semiconductor-on-insulator (sSOI) by a simox method Feb. 3, 2009
7405098 Smooth surface liquid phase epitaxial germanium Jul. 29, 2008
7390710 Protection of tunnel dielectric using epitaxial silicon Jun. 24, 2008

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