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Class Information
Number: 438/410
Name: Semiconductor device manufacturing: process > Formation of electrically isolated lateral semiconductive structure > Total dielectric isolation > Encroachment of separate locally oxidized regions
Description: Process for making a total dielectric isolation semiconductor structure including a step of oxidation of adjacent semiconductive regions whereby the oxidized regions acquire a touching relationship.










Patents under this class:
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Patent Number Title Of Patent Date Issued
8174049 Semiconductor device and method of fabricating the same May. 8, 2012
8058186 Components for substrate processing apparatus and manufacturing method thereof Nov. 15, 2011
7820521 Conductive through via structure and process for electronic device carriers Oct. 26, 2010
7812339 Method for making a semiconductor device including shallow trench isolation (STI) regions with maskless superlattice deposition following STI formation and related structures Oct. 12, 2010
7718498 Semiconductor device and method of producing same May. 18, 2010
7687356 Formation of shallow siGe conduction channel Mar. 30, 2010
7560389 Method for fabricating semiconductor element Jul. 14, 2009
7527188 Self-encapsulated silver alloys for interconnects May. 5, 2009
7482243 Ultra-thin Si channel MOSFET using a self-aligned oxygen implant and damascene technique Jan. 27, 2009
7446000 Method of fabricating semiconductor device having gate dielectrics with different thicknesses Nov. 4, 2008
7442618 Method to engineer etch profiles in Si substrate for advanced semiconductor devices Oct. 28, 2008
7381662 Methods for improving the cracking resistance of low-k dielectric materials Jun. 3, 2008
7381862 Identification of soybeans having resistance to Phytophthora sojae Jun. 3, 2008
7316979 Method and apparatus for providing an integrated active region on silicon-on-insulator devices Jan. 8, 2008
7153753 Strained Si/SiGe/SOI islands and processes of making same Dec. 26, 2006
7094713 Methods for improving the cracking resistance of low-k dielectric materials Aug. 22, 2006
7087471 Locally thinned fins Aug. 8, 2006
6869856 Process for manufacturing a semiconductor wafer integrating electronic devices including a structure for electromagnetic decoupling Mar. 22, 2005
6703285 Method for manufacturing capacitor structure, and method for manufacturing capacitor element Mar. 9, 2004
6693019 METHOD OF MANUFACTURING AN ELECTRONIC POWER DEVICE MONOLITHICALLY INTEGRATED ON A SEMICONDUCTOR AND COMPRISING A FIRST POWER REGION, A SECOND REGION, AND AN ISOLATION STRUCTURE OF LIMITED PLAN Feb. 17, 2004
6670691 Shallow trench isolation fill process Dec. 30, 2003
6656806 SOI structure and method of producing same Dec. 2, 2003
6642090 Fin FET devices from bulk semiconductor and method for forming Nov. 4, 2003
6639228 Method for molecular nitrogen implantation dosage monitoring Oct. 28, 2003
6627511 Reduced stress isolation for SOI devices and a method for fabricating Sep. 30, 2003
6627512 Method of manufacturing a semiconductor device Sep. 30, 2003
6559032 Method of fabricating an isolation structure on a semiconductor substrate May. 6, 2003
6503815 Method for reducing stress and encroachment of sidewall oxide layer of shallow trench isolation Jan. 7, 2003
6495898 Semiconductor device and method of manufacturing the same Dec. 17, 2002
6350657 Inexpensive method of manufacturing an SOI wafer Feb. 26, 2002
6331470 Process for manufacturing a semiconductor material wafer having power regions dielectrically insulated from circuitry regions Dec. 18, 2001
6303520 Silicon oxynitride film Oct. 16, 2001
6281119 Method for making contact with a semiconductor layer and semiconductor structure having a plurality of layers Aug. 28, 2001
6251751 Bulk and strained silicon on insulator using local selective oxidation Jun. 26, 2001
6242289 Method for producing semiconductor device Jun. 5, 2001
6239003 Method of simultaneous fabrication of isolation and gate regions in a semiconductor device May. 29, 2001
6232644 Oxide profile modification by reactant shunting May. 15, 2001
6214692 Method and apparatus for the aligned joining of disk-shaped semiconductor substrates Apr. 10, 2001
6211039 Silicon-on-insulator islands and method for their formation Apr. 3, 2001
6174784 Technique for producing small islands of silicon on insulator Jan. 16, 2001
6153493 Method of manufacturing semiconductor device Nov. 28, 2000
6127246 Method of making an electronic device and the same Oct. 3, 2000
6110793 Method for making a trench isolation having a conformal liner oxide and top and bottom rounded corners for integrated circuits Aug. 29, 2000
6096613 Method for poly-buffered locos without pitting formation Aug. 1, 2000
6090682 Isolation film of semiconductor device and method for fabricating the same comprising a lower isolation film with a upper isolation film formed on top Jul. 18, 2000
6001704 Method of fabricating a shallow trench isolation by using oxide/oxynitride layers Dec. 14, 1999
5985733 Semiconductor device having a T-shaped field oxide layer and a method for fabricating the same Nov. 16, 1999
5963789 Method for silicon island formation Oct. 5, 1999
5963817 Bulk and strained silicon on insulator using local selective oxidation Oct. 5, 1999
5915192 Method for forming shallow trench isolation Jun. 22, 1999

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