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Class Information
Number: 438/408
Name: Semiconductor device manufacturing: process > Formation of electrically isolated lateral semiconductive structure > Total dielectric isolation > With electrolytic treatment step
Description: Process for making a total dielectric isolation semiconductor structure including a step of electrochemical treatment of the semiconductor substrate (i.e., such as to affect etching or coating action thereupon).

Sub-classes under this class:

Class Number Class Name Patents
438/409 Porous semiconductor formation 179

Patents under this class:

Patent Number Title Of Patent Date Issued
8633096 Creating anisotropically diffused junctions in field effect transistor devices Jan. 21, 2014
8592283 Wiring structure, semiconductor device and manufacturing method thereof Nov. 26, 2013
8338261 Semiconductor device including field effect transistor and method of forming the same Dec. 25, 2012
8236657 Replacing symmetric transistors with asymmetric transistors Aug. 7, 2012
8212246 N-type doping in metal oxides and metal chalcogenides by electrochemical methods Jul. 3, 2012
8178416 Method for making an electrically conducting mechanical interconnection member May. 15, 2012
8008156 Nitride read only memory device with buried diffusion spacers and method for making the same Aug. 30, 2011
7955934 Nitride read only memory device with buried diffusion spacers and method for making the same Jun. 7, 2011
7928011 Method for structuring a substrate using a metal mask layer formed using a galvanization process Apr. 19, 2011
RE42040 Switching element method of driving switching element rewritable logic integrated circuit and memory Jan. 18, 2011
7785982 Structures containing electrodeposited germanium and methods for their fabrication Aug. 31, 2010
7732297 Method of manufacturing an insulating layer and method of manufacturing a semiconductor device using the insulating layer Jun. 8, 2010
7396735 Semiconductor element heat dissipating member, semiconductor device using same, and method for manufacturing same Jul. 8, 2008
7223671 Chemical conversion film of tantalum or niobium, method for forming the same and electrolytic capacitor using the same May. 29, 2007
7179716 Method of forming a metal-containing layer over selected regions of a semiconductor substrate Feb. 20, 2007
7116573 Switching element method of driving switching element rewritable logic integrated circuit and memory Oct. 3, 2006
7084043 Method for forming an SOI substrate, vertical transistor and memory cell with vertical transistor Aug. 1, 2006
7060630 Method of forming isolation film of semiconductor device Jun. 13, 2006
6838354 Method for forming a passivation layer for air gap formation Jan. 4, 2005
6835633 SOI wafers with 30-100 .ANG. buried oxide (BOX) created by wafer bonding using 30-100 .ANG. thin oxide as bonding layer Dec. 28, 2004
6673693 Method for forming a trench in a semiconductor substrate Jan. 6, 2004
6664169 Process for producing semiconductor member, process for producing solar cell, and anodizing apparatus Dec. 16, 2003
6656806 SOI structure and method of producing same Dec. 2, 2003
6641662 Method for fabricating ultra thin single-crystal metal oxide wave retarder plates and waveguide polarization mode converter using the same Nov. 4, 2003
6602757 Self-adjusting thickness uniformity in SOI by high-temperature oxidation of SIMOX and bonded SOI Aug. 5, 2003
6559069 Process for the electrochemical oxidation of a semiconductor substrate May. 6, 2003
6537892 Glass frit wafer bonding process and packages formed thereby Mar. 25, 2003
6515845 Method for preparing nanoporous carbon materials and electric double-layer capacitors using them Feb. 4, 2003
6417069 Substrate processing method and manufacturing method, and anodizing apparatus Jul. 9, 2002
6403447 Reduced substrate capacitance high performance SOI process Jun. 11, 2002
6380046 Method of manufacturing a semiconductor device Apr. 30, 2002
6368938 Process for manufacturing a silicon-on-insulator substrate and semiconductor devices on said substrate Apr. 9, 2002
6362075 Method for making a diffused back-side layer on a bonded-wafer with a thick bond oxide Mar. 26, 2002
6352893 Low temperature self-aligned collar formation Mar. 5, 2002
6274456 Monolithic device isolation by buried conducting walls Aug. 14, 2001
6261892 Intra-chip AC isolation of RF passive components Jul. 17, 2001
6197654 Lightly positively doped silicon wafer anodization process Mar. 6, 2001
6140210 Method of fabricating an SOI wafer and SOI wafer fabricated thereby Oct. 31, 2000
6020250 Stacked devices Feb. 1, 2000
5994189 High withstand voltage semiconductor device and manufacturing method thereof Nov. 30, 1999
5950094 Method for fabricating fully dielectric isolated silicon (FDIS) Sep. 7, 1999
5830532 Method to produce ultrathin porous silicon-oxide layer Nov. 3, 1998
4554059 Electrochemical dielectric isolation technique Nov. 19, 1985
4292730 Method of fabricating mesa bipolar memory cell utilizing epitaxial deposition, substrate removal and special metallization Oct. 6, 1981
4268348 Method for making semiconductor structure May. 19, 1981
4193836 Method for making semiconductor structure Mar. 18, 1980
4056414 Process for producing an improved dielectrically-isolated silicon crystal utilizing adjacent areas of different insulators Nov. 1, 1977
3944447 Method for fabrication of integrated circuit structure with full dielectric isolation utilizing selective oxidation Mar. 16, 1976

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