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Class Information
Number: 438/388
Name: Semiconductor device manufacturing: process > Making passive device (e.g., resistor, capacitor, etc.) > Trench capacitor > With epitaxial layer formed over the trench
Description: Process for making a trench capacitor including a step of forming an epitaxial semiconductive layer over the trench region.










Patents under this class:
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Patent Number Title Of Patent Date Issued
6583464 Memory cell using amorphous material to stabilize the boundary face between polycrystalline semiconductor material of a capacitor and monocrystalline semiconductor material of a transistor Jun. 24, 2003
6576525 Damascene capacitor having a recessed plate Jun. 10, 2003
6573136 Isolating a vertical gate contact structure Jun. 3, 2003
6566177 Silicon-on-insulator vertical array device trench capacitor DRAM May. 20, 2003
6566193 Method for producing a cell of a semiconductor memory May. 20, 2003
6537873 Integrated circuit comprising a memory cell of the DRAM type, and fabrication process Mar. 25, 2003
6509226 Process for protecting array top oxide Jan. 21, 2003
6500707 Method for manufacturing a trench capacitor of a memory cell of a semiconductor memory Dec. 31, 2002
6495294 Method for manufacturing semiconductor substrate having an epitaxial film in the trench Dec. 17, 2002
6432792 Substrate and method for manufacturing the same Aug. 13, 2002
6420756 Semiconductor device and method Jul. 16, 2002
6413830 Dynamic random access memory Jul. 2, 2002
6372573 Self-aligned trench capacitor capping process for high density DRAM cells Apr. 16, 2002
6362040 Reduction of orientation dependent oxidation for vertical sidewalls of semiconductor substrates Mar. 26, 2002
6326275 DRAM cell with vertical CMOS transistor Dec. 4, 2001
6303456 Method for making a finger capacitor with tuneable dielectric constant Oct. 16, 2001
6284593 Method for shallow trench isolated, contacted well, vertical MOSFET DRAM Sep. 4, 2001
6284618 Method of making a semiconductor device having a conductor pattern side face provided with a separate conductive sidewall Sep. 4, 2001
6245612 Method for making the bottom electrode of a capacitor Jun. 12, 2001
6232171 Technique of bottle-shaped deep trench formation May. 15, 2001
6207494 Isolation collar nitride liner for DRAM process improvement Mar. 27, 2001
6177289 Lateral trench optical detectors Jan. 23, 2001
6169008 High Q inductor and its forming method Jan. 2, 2001
6093614 Memory cell structure and fabrication Jul. 25, 2000
6087214 Arrangement and method for DRAM cell using shallow trench isolation Jul. 11, 2000
6064085 DRAM cell with a multiple fin-shaped structure capacitor May. 16, 2000
6010963 Global planarization using SOG and CMP Jan. 4, 2000
5972105 Method of fabricating semiconductor device Oct. 26, 1999
5923971 Reliable low resistance strap for trench storage DRAM cell using selective epitaxy Jul. 13, 1999
5913125 Method of controlling stress in a film Jun. 15, 1999
5893735 Three-dimensional device layout with sub-groundrule features Apr. 13, 1999
5843820 Method of fabricating a new dynamic random access memory (DRAM) cell having a buried horizontal trench capacitor Dec. 1, 1998
5627092 Deep trench dram process on SOI for low leakage DRAM cell May. 6, 1997
5371032 Process for production of a semiconductor device having a cladding layer Dec. 6, 1994
5336629 Folder Bitline DRAM having access transistors stacked above trench storage capacitors, each such transistor employing a planar semiconductor body which spans adjacent capacitors Aug. 9, 1994
5013679 Cell capacitor of a dynamic random access memory and a method of manufacturing the same May. 7, 1991
4843025 Method of fabricating trench cell capacitors on a semocondcutor substrate Jun. 27, 1989
4656054 Method of manufacturing a semiconductor device involving a capacitor Apr. 7, 1987
4645564 Method of manufacturing semiconductor device with MIS capacitor Feb. 24, 1987

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