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Class Information
Number: 438/387
Name: Semiconductor device manufacturing: process > Making passive device (e.g., resistor, capacitor, etc.) > Trench capacitor > Having stacked capacitor structure (e.g., stacked trench, buried stacked capacitor, etc.)
Description: Process wherein the trench capacitor contains a number of capacitor plate regions aligned vertically above each other.

Patents under this class:
1 2 3 4 5 6 7 8 9 10

Patent Number Title Of Patent Date Issued
6083790 Method for making y-shaped multi-fin stacked capacitors for dynamic random access memory cells Jul. 4, 2000
6080618 Controllability of a buried device layer Jun. 27, 2000
6064085 DRAM cell with a multiple fin-shaped structure capacitor May. 16, 2000
6048762 Method of fabricating embedded dynamic random access memory Apr. 11, 2000
6040214 Method for making field effect transistors having sub-lithographic gates with vertical side walls Mar. 21, 2000
6037234 Method of fabricating capacitor Mar. 14, 2000
6037235 Hydrogen anneal for curing defects of silicon/nitride interfaces of semiconductor devices Mar. 14, 2000
6027969 Capacitor structure for a dynamic random access memory cell Feb. 22, 2000
5976928 Chemical mechanical polishing of FeRAM capacitors Nov. 2, 1999
5973346 Low-profile shallow trench double polysilicon capacitor Oct. 26, 1999
5963814 Method of forming recessed container cells by wet etching conductive layer and dissimilar layer formed over conductive layer Oct. 5, 1999
5959325 Method for forming cornered images on a substrate and photomask formed thereby Sep. 28, 1999
5926717 Method of making an integrated circuit with oxidizable trench liner Jul. 20, 1999
5920785 Dram cell and array to store two-bit data having merged stack capacitor and trench capacitor Jul. 6, 1999
5912044 Method for forming thin film capacitors Jun. 15, 1999
5903024 Stacked and trench type DRAM capacitor May. 11, 1999
5854119 Robust method of forming a cylinder capacitor for DRAM circuits Dec. 29, 1998
5798545 Semiconductor storage device Aug. 25, 1998
5792686 Method of forming a bit-line and a capacitor structure in an integrated circuit Aug. 11, 1998
5741739 Manufacturing method of a charge storage electrode by using cylindrical oxide patterns Apr. 21, 1998
5742472 Stacked capacitors for integrated circuit devices and related methods Apr. 21, 1998
5723384 Method for manufacturing a capacitor in a semiconductor device using selective tungsten nitride thin film Mar. 3, 1998
5668039 Method for forming crown-shape capacitor node with tapered etching Sep. 16, 1997
5665624 Method for fabricating trench/stacked capacitors on DRAM cells with increased capacitance Sep. 9, 1997
5595931 Method for fabricating capacitor of a semiconductor device Jan. 21, 1997
5585303 Method for manufacturing a stacked/trench DRAM capacitor Dec. 17, 1996
5521111 Process of fabricating memory cell with a switching transistor and a trench-stacked capacitor coupled in series May. 28, 1996
5508215 Current leakage reduction at the storage node diffusion region of a stacked-trench dram cell by selectively oxidizing the floor of the trench Apr. 16, 1996
5492853 Method of forming a contact using a trench and an insulation layer during the formation of a semiconductor device Feb. 20, 1996
5470778 Method of manufacturing a semiconductor device Nov. 28, 1995
5466628 Method of manufacturing trench capacitor with a recessed field oxide layer Nov. 14, 1995
5466628 Method of manufacturing trench capacitor with a recessed field oxide layer Nov. 14, 1995
5455192 Method of making dynamic random access memory cell having a stacked capacitor and a trench capacitor Oct. 3, 1995
5449636 Method for the fabrication of DRAM cell having a trench in the field oxide Sep. 12, 1995
5429978 Method of forming a high density self-aligned stack in trench Jul. 4, 1995
5405801 Method for manufacturing a capacitor of a semiconductor device Apr. 11, 1995
5346845 Process for forming a trench capacitor memory cell Sep. 13, 1994
5343354 Stacked trench capacitor and a method for making the same Aug. 30, 1994
5334547 Method of manufacturing a semiconductor memory having an increased cell capacitance in a restricted cell area Aug. 2, 1994
5258321 Manufacturing method for semiconductor memory device having stacked trench capacitors and improved intercell isolation Nov. 2, 1993
5234854 Method for manufacturing semiconductor device Aug. 10, 1993
5227322 Method for manufacturing a highly integrated semiconductor device having a capacitor of large capacitance Jul. 13, 1993
5208180 Method of forming a capacitor May. 4, 1993
5143861 Method making a dynamic random access memory cell with a tungsten plug Sep. 1, 1992
5120677 Method for making a semiconductor device by doping with arsenic, of at least 25 wt. % into a polysilicon layer Jun. 9, 1992
5075248 Method of making DRAM having a side wall doped trench and stacked capacitor structure Dec. 24, 1991
5075817 Trench capacitor for large scale integrated memory Dec. 24, 1991
5073515 Method for manufacturing a trench capacitor of a one-transistor memory cell in a semiconductor substrate with a self-aligned capacitor plate electrode Dec. 17, 1991
4877750 Method of fabricating a trench capacitor cell for a semiconductor memory device Oct. 31, 1989
4859615 Semiconductor memory cell capacitor and method for making the same Aug. 22, 1989

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