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Class Information
Number: 438/387
Name: Semiconductor device manufacturing: process > Making passive device (e.g., resistor, capacitor, etc.) > Trench capacitor > Having stacked capacitor structure (e.g., stacked trench, buried stacked capacitor, etc.)
Description: Process wherein the trench capacitor contains a number of capacitor plate regions aligned vertically above each other.










Patents under this class:
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Patent Number Title Of Patent Date Issued
6306724 Method of forming a trench isolation structure in a stack trench capacitor fabrication process Oct. 23, 2001
6303456 Method for making a finger capacitor with tuneable dielectric constant Oct. 16, 2001
6303429 Structure of a capacitor section of a dynamic random-access memory Oct. 16, 2001
6284593 Method for shallow trench isolated, contacted well, vertical MOSFET DRAM Sep. 4, 2001
6284618 Method of making a semiconductor device having a conductor pattern side face provided with a separate conductive sidewall Sep. 4, 2001
6281068 Method for buried plate formation in deep trench capacitors Aug. 28, 2001
6281091 Container capacitor structure and method of formation thereof Aug. 28, 2001
6268244 Method of fabricating capacitors of a memory cell array Jul. 31, 2001
6261894 Method for forming dual workfunction high-performance support MOSFETs in EDRAM arrays Jul. 17, 2001
6258192 Multi-thickness, multi-layer green sheet processing Jul. 10, 2001
6251722 Method of fabricating a trench capacitor Jun. 26, 2001
6245612 Method for making the bottom electrode of a capacitor Jun. 12, 2001
6232171 Technique of bottle-shaped deep trench formation May. 15, 2001
6232170 Method of fabricating trench for SOI merged logic DRAM May. 15, 2001
6225157 Capacitor/antifuse structure having a barrier-layer electrode and improved barrier layer May. 1, 2001
6218255 Method of making a capacitor Apr. 17, 2001
6211033 Integrated capacitor bottom electrode for use with conformal dielectric Apr. 3, 2001
6207494 Isolation collar nitride liner for DRAM process improvement Mar. 27, 2001
6204115 Manufacture of high-density pillar memory cell arrangement Mar. 20, 2001
6190971 Formation of 5F2 cell with partially vertical transistor and gate conductor aligned buried strap with raised shallow trench isolation region Feb. 20, 2001
6177289 Lateral trench optical detectors Jan. 23, 2001
6165837 Semiconductor integrated memory manufacturing method and device Dec. 26, 2000
6165863 Aluminum-filled self-aligned trench for stacked capacitor structure and methods Dec. 26, 2000
6159818 Method of forming a container capacitor structure Dec. 12, 2000
6153491 Overhanging separator for self-defining discontinuous film Nov. 28, 2000
6150211 Methods of forming storage capacitors in integrated circuitry memory cells and integrated circuitry Nov. 21, 2000
6140199 Method and arrangement of a buried capacitor, and a buried capacitor arranged according to said method Oct. 31, 2000
6140175 Self-aligned deep trench DRAM array device Oct. 31, 2000
6136659 Production process for a capacitor electrode formed of a platinum metal Oct. 24, 2000
6100132 Method of deforming a trench by a thermal treatment Aug. 8, 2000
6093614 Memory cell structure and fabrication Jul. 25, 2000
6083790 Method for making y-shaped multi-fin stacked capacitors for dynamic random access memory cells Jul. 4, 2000
6080618 Controllability of a buried device layer Jun. 27, 2000
6064085 DRAM cell with a multiple fin-shaped structure capacitor May. 16, 2000
6048762 Method of fabricating embedded dynamic random access memory Apr. 11, 2000
6040214 Method for making field effect transistors having sub-lithographic gates with vertical side walls Mar. 21, 2000
6037235 Hydrogen anneal for curing defects of silicon/nitride interfaces of semiconductor devices Mar. 14, 2000
6037234 Method of fabricating capacitor Mar. 14, 2000
6027969 Capacitor structure for a dynamic random access memory cell Feb. 22, 2000
5976928 Chemical mechanical polishing of FeRAM capacitors Nov. 2, 1999
5973346 Low-profile shallow trench double polysilicon capacitor Oct. 26, 1999
5963814 Method of forming recessed container cells by wet etching conductive layer and dissimilar layer formed over conductive layer Oct. 5, 1999
5959325 Method for forming cornered images on a substrate and photomask formed thereby Sep. 28, 1999
5926717 Method of making an integrated circuit with oxidizable trench liner Jul. 20, 1999
5920785 Dram cell and array to store two-bit data having merged stack capacitor and trench capacitor Jul. 6, 1999
5912044 Method for forming thin film capacitors Jun. 15, 1999
5903024 Stacked and trench type DRAM capacitor May. 11, 1999
5854119 Robust method of forming a cylinder capacitor for DRAM circuits Dec. 29, 1998
5798545 Semiconductor storage device Aug. 25, 1998
5792686 Method of forming a bit-line and a capacitor structure in an integrated circuit Aug. 11, 1998

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