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Class Information
Number: 438/387
Name: Semiconductor device manufacturing: process > Making passive device (e.g., resistor, capacitor, etc.) > Trench capacitor > Having stacked capacitor structure (e.g., stacked trench, buried stacked capacitor, etc.)
Description: Process wherein the trench capacitor contains a number of capacitor plate regions aligned vertically above each other.










Patents under this class:
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Patent Number Title Of Patent Date Issued
6399435 Method for producing a DRAM cell with a trench capacitor Jun. 4, 2002
6396092 Semiconductor device and method for manufacturing the same May. 28, 2002
6391735 Container capacitor structure May. 21, 2002
6372573 Self-aligned trench capacitor capping process for high density DRAM cells Apr. 16, 2002
6373091 Vertical DRAM cell with TFT over trench capacitor Apr. 16, 2002
6372574 Method of forming a capacitor container electrode and method of patterning a metal layer by selectively silicizing the electrode or metal layer and removing the silicized portion Apr. 16, 2002
6365452 DRAM cell having a vertical transistor and a capacitor formed on the sidewalls of a trench isolation Apr. 2, 2002
6362068 Electrode interface for high-dielectric-constant materials Mar. 26, 2002
6362040 Reduction of orientation dependent oxidation for vertical sidewalls of semiconductor substrates Mar. 26, 2002
6359299 Apparatus and method for forming controlled deep trench top isolation layers Mar. 19, 2002
6352903 Junction isolation Mar. 5, 2002
6344413 Method for forming a semiconductor device Feb. 5, 2002
6335241 Semiconductor device and manufacturing method thereof Jan. 1, 2002
6329263 Method of forming a container capacitor structure Dec. 11, 2001
6329239 Dram cell formed on an insulating layer having a vertical channel and a manufacturing method thereof Dec. 11, 2001
6326275 DRAM cell with vertical CMOS transistor Dec. 4, 2001
6319789 Method for improved processing and etchback of a container capacitor Nov. 20, 2001
6306719 Method for manufacturing a semiconductor device Oct. 23, 2001
6306720 Method for forming capacitor of mixed-mode device Oct. 23, 2001
6306724 Method of forming a trench isolation structure in a stack trench capacitor fabrication process Oct. 23, 2001
6303429 Structure of a capacitor section of a dynamic random-access memory Oct. 16, 2001
6303456 Method for making a finger capacitor with tuneable dielectric constant Oct. 16, 2001
6284593 Method for shallow trench isolated, contacted well, vertical MOSFET DRAM Sep. 4, 2001
6284618 Method of making a semiconductor device having a conductor pattern side face provided with a separate conductive sidewall Sep. 4, 2001
6281091 Container capacitor structure and method of formation thereof Aug. 28, 2001
6281068 Method for buried plate formation in deep trench capacitors Aug. 28, 2001
6268244 Method of fabricating capacitors of a memory cell array Jul. 31, 2001
6261894 Method for forming dual workfunction high-performance support MOSFETs in EDRAM arrays Jul. 17, 2001
6258192 Multi-thickness, multi-layer green sheet processing Jul. 10, 2001
6251722 Method of fabricating a trench capacitor Jun. 26, 2001
6245612 Method for making the bottom electrode of a capacitor Jun. 12, 2001
6232170 Method of fabricating trench for SOI merged logic DRAM May. 15, 2001
6232171 Technique of bottle-shaped deep trench formation May. 15, 2001
6225157 Capacitor/antifuse structure having a barrier-layer electrode and improved barrier layer May. 1, 2001
6218255 Method of making a capacitor Apr. 17, 2001
6211033 Integrated capacitor bottom electrode for use with conformal dielectric Apr. 3, 2001
6207494 Isolation collar nitride liner for DRAM process improvement Mar. 27, 2001
6204115 Manufacture of high-density pillar memory cell arrangement Mar. 20, 2001
6190971 Formation of 5F2 cell with partially vertical transistor and gate conductor aligned buried strap with raised shallow trench isolation region Feb. 20, 2001
6177289 Lateral trench optical detectors Jan. 23, 2001
6165837 Semiconductor integrated memory manufacturing method and device Dec. 26, 2000
6165863 Aluminum-filled self-aligned trench for stacked capacitor structure and methods Dec. 26, 2000
6159818 Method of forming a container capacitor structure Dec. 12, 2000
6153491 Overhanging separator for self-defining discontinuous film Nov. 28, 2000
6150211 Methods of forming storage capacitors in integrated circuitry memory cells and integrated circuitry Nov. 21, 2000
6140175 Self-aligned deep trench DRAM array device Oct. 31, 2000
6140199 Method and arrangement of a buried capacitor, and a buried capacitor arranged according to said method Oct. 31, 2000
6136659 Production process for a capacitor electrode formed of a platinum metal Oct. 24, 2000
6100132 Method of deforming a trench by a thermal treatment Aug. 8, 2000
6093614 Memory cell structure and fabrication Jul. 25, 2000

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