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Class Information
Number: 438/387
Name: Semiconductor device manufacturing: process > Making passive device (e.g., resistor, capacitor, etc.) > Trench capacitor > Having stacked capacitor structure (e.g., stacked trench, buried stacked capacitor, etc.)
Description: Process wherein the trench capacitor contains a number of capacitor plate regions aligned vertically above each other.










Patents under this class:
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Patent Number Title Of Patent Date Issued
6593187 Method to fabricate a square poly spacer in flash Jul. 15, 2003
6586300 Spacer assisted trench top isolation for vertical DRAM's Jul. 1, 2003
6583020 Method for fabricating a trench isolation for electrically active components Jun. 24, 2003
6583461 Semiconductor device and method of manufacturing the same Jun. 24, 2003
6580112 Method for fabricating an open can-type stacked capacitor on an uneven surface Jun. 17, 2003
6576525 Damascene capacitor having a recessed plate Jun. 10, 2003
6576523 Layered product, capacitor and a method for producing the layered product Jun. 10, 2003
6576524 Method of making a prismatic capacitor Jun. 10, 2003
6573136 Isolating a vertical gate contact structure Jun. 3, 2003
6566190 Vertical internally-connected trench cell (V-ICTC) and formation method for semiconductor memory devices May. 20, 2003
6558998 SOI type integrated circuit with a decoupling capacity and process for embodiment of such a circuit May. 6, 2003
6559002 Rough oxide hard mask for DT surface area enhancement for DT DRAM May. 6, 2003
6555432 Integrated capacitor bottom electrode for use with conformal dielectric Apr. 29, 2003
6552382 Scalable vertical DRAM cell structure and its manufacturing methods Apr. 22, 2003
6551893 Atomic layer deposition of capacitor dielectric Apr. 22, 2003
6548368 Method of forming a MIS capacitor Apr. 15, 2003
6548345 Method of fabricating trench for SOI merged logic DRAM Apr. 15, 2003
6544838 Method of deep trench formation with improved profile control and surface area Apr. 8, 2003
6537873 Integrated circuit comprising a memory cell of the DRAM type, and fabrication process Mar. 25, 2003
6537872 Method of fabricating a DRAM cell capacitor Mar. 25, 2003
6534376 Process flow for sacrificial collar scheme with vertical nitride mask Mar. 18, 2003
6534375 METHOD OF FORMING A CAPACITOR IN A SEMICONDUCTOR INTEGRATED CIRCUIT DEVICE USING A METAL SILICON NITRIDE LAYER TO PROTECT AN UNDERLYING METAL SILICIDE LAYER FROM OXIDATION DURING SUBSEQUENT PR Mar. 18, 2003
6524868 Method for fabricating semiconductor memory device Feb. 25, 2003
6524926 Metal-insulator-metal capacitor formed by damascene processes between metal interconnect layers and method of forming same Feb. 25, 2003
6515327 Trench capacitor with expanded area and method of making the same Feb. 4, 2003
6514788 Method for manufacturing contacts for a Chalcogenide memory device Feb. 4, 2003
6509226 Process for protecting array top oxide Jan. 21, 2003
6500707 Method for manufacturing a trench capacitor of a memory cell of a semiconductor memory Dec. 31, 2002
6492241 Integrated capacitors fabricated with conductive metal oxides Dec. 10, 2002
6486024 Integrated circuit trench device with a dielectric collar stack, and method of forming thereof Nov. 26, 2002
6486531 Contact structure with a lower interconnection having t-shaped portion in cross section and method for forming the same Nov. 26, 2002
6476434 4 F2 folded bit line dram cell structure having buried bit and word lines Nov. 5, 2002
6468873 MIM formation method on CU damscene Oct. 22, 2002
6465319 Aluminum-filled self-aligned trench for stacked capacitor structure and methods Oct. 15, 2002
6458647 Process flow for sacrificial collar with poly mask Oct. 1, 2002
6455369 Method for fabricating a trench capacitor Sep. 24, 2002
6455370 Method of patterning noble metals for semiconductor devices by electropolishing Sep. 24, 2002
6451661 DRAM capacitor formulation using a double-sided electrode Sep. 17, 2002
6448132 Semiconductor device having a lower electrode aperture that is larger than the photolithography resolution of the capacitor pattern Sep. 10, 2002
6440794 Method for forming an array of DRAM cells by employing a self-aligned adjacent node isolation technique Aug. 27, 2002
6423609 Methods of forming capacitors on a wafer, photolithographic methods of forming capacitors on a wafer, and semiconductor wafer Jul. 23, 2002
6420239 Memory cell with trench capacitor and method of fabricating the memory cell Jul. 16, 2002
6417063 Folded deep trench capacitor and method Jul. 9, 2002
6417066 Method of forming a DRAM capacitor structure including increasing the surface area using a discrete silicon mask Jul. 9, 2002
6414348 Method for fabricating capacitor in semiconductor device Jul. 2, 2002
6410399 Process to lower strap, wordline and bitline contact resistance in trench-based DRAMS by silicidization Jun. 25, 2002
6410384 Method of making an electric conductive strip Jun. 25, 2002
6411492 Structure and method for fabrication of an improved capacitor Jun. 25, 2002
6407422 Oxygen diffusion blocking semiconductor capacitor Jun. 18, 2002
6403414 Method for producing low carbon/oxygen conductive layers Jun. 11, 2002

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