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Class Information
Number: 438/387
Name: Semiconductor device manufacturing: process > Making passive device (e.g., resistor, capacitor, etc.) > Trench capacitor > Having stacked capacitor structure (e.g., stacked trench, buried stacked capacitor, etc.)
Description: Process wherein the trench capacitor contains a number of capacitor plate regions aligned vertically above each other.










Patents under this class:
1 2 3 4 5 6 7 8 9 10

Patent Number Title Of Patent Date Issued
4717689 Method of forming semimicron grooves in semiconductor material Jan. 5, 1988
4656054 Method of manufacturing a semiconductor device involving a capacitor Apr. 7, 1987
4650544 Shallow groove capacitor fabrication method Mar. 17, 1987

1 2 3 4 5 6 7 8 9 10










 
 
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