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Class Information
Number: 438/380
Name: Semiconductor device manufacturing: process > Avalanche diode manufacture (e.g., impatt, trappat, etc.)
Description: Process for making a device which is configured to operate in a manner in which an external voltage is applied in the reverse-conducting direction of the semiconductor device junction with sufficient magnitude to cause the potential barrier at the junction to breakdown due to electrons or holes gaining sufficient speed to dislodge valence electrons and thus create more hole-electron current carriers resulting in a sudden change from high dynamic electrical resistance to very low dynamic resistance.
Patents under this class:
| Patent Number |
Title Of Patent |
Date Issued |
| 4959328 |
Method for manufacturing a semiconductor component contactable on both sides |
Sep. 25, 1990 |
| 4905071 |
Monolithic series-shunt diode switch |
Feb. 27, 1990 |
| 4886762 |
Monolithic temperature compensated voltage-reference diode and method for its manufacture |
Dec. 12, 1989 |
| 4859633 |
Process for fabricating monolithic microwave diodes |
Aug. 22, 1989 |
| 4775643 |
Mesa zener diode and method of manufacture thereof |
Oct. 4, 1988 |
| 4742021 |
Subsurface zener diode and method of making |
May. 3, 1988 |
| 4637126 |
Method for making an avalanche photodiode |
Jan. 20, 1987 |
| 4596070 |
Interdigitated IMPATT devices |
Jun. 24, 1986 |
| 4596069 |
Three dimensional processing for monolithic IMPATTs |
Jun. 24, 1986 |
| 4473941 |
Method of fabricating zener diodes |
Oct. 2, 1984 |
| 4400221 |
Fabrication of gallium arsenide-germanium heteroface junction device |
Aug. 23, 1983 |
| 4384400 |
Method of fabricating monolithically interconnected series-parallel avalanche diodes |
May. 24, 1983 |
| 4373255 |
Method of making oxide passivated mesa epitaxial diodes with integral plated heat sink |
Feb. 15, 1983 |
| 4370797 |
Method of semiconductor device for generating electron beams |
Feb. 1, 1983 |
| 4323909 |
Planar avalanche diode with a breakdown voltage between 4 and 8 volts |
Apr. 6, 1982 |
| 4279070 |
Method of making integrated waveguide cavities |
Jul. 21, 1981 |
| 4230505 |
Method of making an impatt diode utilizing a combination of epitaxial deposition, ion implantation and substrate removal |
Oct. 28, 1980 |
| 4203781 |
Laser deformation of semiconductor junctions |
May. 20, 1980 |
| 4201604 |
Process for making a negative resistance diode utilizing spike doping |
May. 6, 1980 |
| 4189342 |
Semiconductor device comprising projecting contact layers |
Feb. 19, 1980 |
| 4186407 |
Heterojunction avalanche diode with a ternary alloy of gallium, indium and arsenic, and a binary alloy of indium and phosphorus |
Jan. 29, 1980 |
| 4162203 |
Method of making a narrow-band inverted homo-heterojunction avalanche photodiode |
Jul. 24, 1979 |
| 4155777 |
Zener diode incorporating an ion implanted layer establishing the breakdown point below the surface |
May. 22, 1979 |
| 4126932 |
Structure and process for millimetric wave sources integrated in a radial waveguide |
Nov. 28, 1978 |
| 4119440 |
Method of making ion implanted zener diode |
Oct. 10, 1978 |
| 4106959 |
Producing high efficiency gallium arsenide IMPATT diodes utilizing a gas injection system |
Aug. 15, 1978 |
| 4104085 |
Method of manufacturing a semiconductor device by implanting ions through bevelled oxide layer in single masking step |
Aug. 1, 1978 |
| 4102037 |
Method of creating a millimeter wave source and of adapting such a source to waveguide transmission |
Jul. 25, 1978 |
| 4099318 |
Semiconductor devices |
Jul. 11, 1978 |
| 4064620 |
Ion implantation process for fabricating high frequency avalanche devices |
Dec. 27, 1977 |
| 4062103 |
Method for manufacturing a semiconductor device |
Dec. 13, 1977 |
| 4045252 |
Method of manufacturing a semiconductor structure for microwave operation, including a very thin insulating or weakly doped layer |
Aug. 30, 1977 |
| 4038106 |
Four-layer trapatt diode and method for making same |
Jul. 26, 1977 |
| 4033810 |
Method for making avalanche semiconductor amplifier |
Jul. 5, 1977 |
| 4030943 |
Planar process for making high frequency ion implanted passivated semiconductor devices and microwave integrated circuits |
Jun. 21, 1977 |
| 4029542 |
Method for sloping the sidewalls of multilayer P+ PN+ junction mesa structures |
Jun. 14, 1977 |
| 4028140 |
Semiconductor device manufacture |
Jun. 7, 1977 |
| 4007104 |
Mesa fabrication process |
Feb. 8, 1977 |
| 3986192 |
High efficiency gallium arsenide impatt diodes |
Oct. 12, 1976 |
| 3981073 |
Lateral semiconductive device and method of making same |
Sep. 21, 1976 |
| 3961989 |
Method of making IMPATT diode and resulting diode |
Jun. 8, 1976 |
| 3955270 |
Methods for making semiconductor devices |
May. 11, 1976 |
| 3953254 |
Method of producing temperature compensated reference diodes utilizing selective epitaxial growth |
Apr. 27, 1976 |
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