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Class Information
Number: 438/377
Name: Semiconductor device manufacturing: process > Forming bipolar transistor by formation or alteration of semiconductive active regions > Self-aligned > Dopant implantation or diffusion > Simultaneous introduction of plural dopants > Plural doping steps > Through same mask opening
Description: Process wherein plural doping steps are affected through the same opening in a dopant masking layer.
Patents under this class:
| Patent Number |
Title Of Patent |
Date Issued |
| 7598133 |
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Oct. 6, 2009 |
| 7550355 |
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Jun. 23, 2009 |
| 7488663 |
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Feb. 10, 2009 |
| 7303949 |
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Dec. 4, 2007 |
| 7241660 |
Manufacturing method of semiconductor device |
Jul. 10, 2007 |
| 7067383 |
Method of making bipolar transistors and resulting product |
Jun. 27, 2006 |
| 7037748 |
CMOS image sensor and method for manufacturing the same |
May. 2, 2006 |
| 7033903 |
Method and apparatus for forming patterned photoresist layer |
Apr. 25, 2006 |
| 6890826 |
Method of making bipolar transistor with integrated base contact and field plate |
May. 10, 2005 |
| 6872645 |
Methods of positioning and/or orienting nanostructures |
Mar. 29, 2005 |
| 6835606 |
Low temperature polysilicon thin film transistor and method of forming polysilicon layer of same |
Dec. 28, 2004 |
| 6432790 |
Method of manufacturing photomask, photomask, and method of manufacturing semiconductor integrated circuit device |
Aug. 13, 2002 |
| 6337252 |
Semiconductor device manufacturing method |
Jan. 8, 2002 |
| 6329260 |
Analog-to-digital converter and method of fabrication |
Dec. 11, 2001 |
| 6251739 |
Integrated circuit, components thereof and manufacturing method |
Jun. 26, 2001 |
| 6180442 |
Bipolar transistor with an inhomogeneous emitter in a BICMOS integrated circuit method |
Jan. 30, 2001 |
| 6077746 |
Using p-type halo implant as ROM cell isolation in flat-cell mask ROM process |
Jun. 20, 2000 |
| 6043130 |
Process for forming bipolar transistor compatible with CMOS utilizing tilted ion implanted base |
Mar. 28, 2000 |
| 6001700 |
Method and mask structure for self-aligning ion implanting to form various device structures |
Dec. 14, 1999 |
| 5885880 |
Bipolar transistor device and method for manufacturing the same |
Mar. 23, 1999 |
| 5846858 |
SOI-BiCMOS method |
Dec. 8, 1998 |
| 5837590 |
Isolated vertical PNP transistor without required buried layer |
Nov. 17, 1998 |
| 5726922 |
Assembly for removably connecting data storage devices |
Mar. 10, 1998 |
| 5688709 |
Method for forming composite trench-fin capacitors for DRAMS |
Nov. 18, 1997 |
| 5593906 |
Method of processing a polysilicon film on a single-crystal silicon substrate |
Jan. 14, 1997 |
| 5589409 |
Fabrication of bipolar transistors with improved output current-voltage characteristics |
Dec. 31, 1996 |
| 5569613 |
Method of making bipolar junction transistor |
Oct. 29, 1996 |
| 5336632 |
Method for manufacturing capacitor and bipolar transistor |
Aug. 9, 1994 |
| 5296388 |
Fabrication method for semiconductor devices |
Mar. 22, 1994 |
| 5254485 |
Method for manufacturing bipolar semiconductor device |
Oct. 19, 1993 |
| 5252517 |
Method of conductor isolation from a conductive contact plug |
Oct. 12, 1993 |
| 5091321 |
Method for making an NPN transistor with controlled base width compatible with making a Bi-MOS integrated circuit |
Feb. 25, 1992 |
| 5077227 |
Semiconductor device and method for fabricating the same |
Dec. 31, 1991 |
| 5071780 |
Reverse self-aligned transistor integrated circuit |
Dec. 10, 1991 |
| 5064774 |
Self-aligned bipolar transistor process |
Nov. 12, 1991 |
| 5019523 |
Process for making polysilicon contacts to IC mesas |
May. 28, 1991 |
| 4952521 |
Process for fabricating a semiconductor device with selective growth of a metal silicide |
Aug. 28, 1990 |
| 4898837 |
Method of fabricating a semiconductor integrated circuit |
Feb. 6, 1990 |
| 4824794 |
Method for fabricating a bipolar transistor having self aligned base and emitter |
Apr. 25, 1989 |
| 4804634 |
Integrated circuit lateral transistor structure |
Feb. 14, 1989 |
| 4780426 |
Method for manufacturing high-breakdown voltage semiconductor device |
Oct. 25, 1988 |
| 4717677 |
Fabricating a semiconductor device with buried oxide |
Jan. 5, 1988 |
| 4701998 |
Method for fabricating a bipolar transistor |
Oct. 27, 1987 |
| 4693782 |
Fabrication method of semiconductor device |
Sep. 15, 1987 |
| 4689872 |
Method of manufacturing a semiconductor device |
Sep. 1, 1987 |
| 4536945 |
Process for producing CMOS structures with Schottky bipolar transistors |
Aug. 27, 1985 |
| 4536950 |
Method for making semiconductor device |
Aug. 27, 1985 |
| 4465528 |
Method of producing a walled emitter semiconductor device |
Aug. 14, 1984 |
| 4441932 |
Process for preparing semiconductor device having active base region implanted therein using walled emitter opening and the edge of dielectric isolation zone |
Apr. 10, 1984 |
| 4347654 |
Method of fabricating a high-frequency bipolar transistor structure utilizing permeation-etching |
Sep. 7, 1982 |
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