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Class Information
Number: 438/376
Name: Semiconductor device manufacturing: process > Forming bipolar transistor by formation or alteration of semiconductive active regions > Self-aligned > Dopant implantation or diffusion > Simultaneous introduction of plural dopants > Plural doping steps > Single dopant forming regions of different depth or concentrations
Description: Process wherein the plural doping steps form regions which differ in amount of impurity or the distance the impurity has to travel inwardly from the surface.

Patents under this class:
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Patent Number Title Of Patent Date Issued
8575011 Method of fabricating a device with a concentration gradient and the corresponding device Nov. 5, 2013
8481378 Effecting selectivity of silicon or silicon-germanium deposition on a silicon or silicon-germanium substrate by doping Jul. 9, 2013
8236676 Integrated circuit having doped semiconductor body and method Aug. 7, 2012
8198659 Semiconductor device and method for fabricating the same Jun. 12, 2012
8080452 Effecting selectivity of silicon or silicon-germanium deposition on a silicon or silicon-germanium substrate by doping Dec. 20, 2011
8035196 Methods of counter-doping collector regions in bipolar transistors Oct. 11, 2011
8030167 Varied impurity profile region formation for varying breakdown voltage of devices Oct. 4, 2011
8003476 Semiconductor device having a plurality of kinds of wells and manufacturing method thereof Aug. 23, 2011
7824973 Method of forming a semiconductor device and semiconductor device thereof Nov. 2, 2010
7759742 Metal oxide semiconductor transistor Jul. 20, 2010
7615458 Activation of CMOS source/drain extensions by ultra-high temperature anneals Nov. 10, 2009
7550355 Low-leakage transistor and manufacturing method thereof Jun. 23, 2009
7495264 Semiconductor device with high dielectric constant insulating film and manufacturing method for the same Feb. 24, 2009
7384853 Method of performing salicide processes on MOS transistors Jun. 10, 2008
7288829 Bipolar transistor with self-aligned retrograde extrinsic base implant profile and self-aligned silicide Oct. 30, 2007
7271070 Method for producing transistors Sep. 18, 2007
7195986 Microfluidic device with controlled substrate conductivity Mar. 27, 2007
6995068 Double-implant high performance varactor and method for manufacturing same Feb. 7, 2006
6893934 Bipolar transistor device having phosphorous May. 17, 2005
6716712 Process for producing two differently doped adjacent regions in an integrated semiconductor Apr. 6, 2004
6337252 Semiconductor device manufacturing method Jan. 8, 2002
6329257 Method for laterally peaked source doping profiles for better erase control in flash memory devices Dec. 11, 2001
6309940 Latch-up resistant CMOS structure Oct. 30, 2001
6225180 Semiconductor device and method of manufacturing the same May. 1, 2001
6215151 Methods of forming integrated circuitry and integrated circuitry Apr. 10, 2001
6146953 Fabrication method for mosfet device Nov. 14, 2000
6043130 Process for forming bipolar transistor compatible with CMOS utilizing tilted ion implanted base Mar. 28, 2000
5976921 Method for manufacturing electrostatic discharge protection (ESD) and BiCMOS Nov. 2, 1999
5885880 Bipolar transistor device and method for manufacturing the same Mar. 23, 1999
5850242 Recording head and recording apparatus and method of manufacturing same Dec. 15, 1998
5780329 Process for fabricating a moderate-depth diffused emitter bipolar transistor in a BICMOS device without using an additional mask Jul. 14, 1998
5756387 Method for forming zener diode with high time stability and low noise May. 26, 1998
5700730 Semiconductor processing method of providing dopant impurity into a semiconductor substrate Dec. 23, 1997
5593905 Method of forming stacked barrier-diffusion source and etch stop for double polysilicon BJT with patterned base link Jan. 14, 1997
5569612 Process for manufacturing a bipolar power transistor having a high breakdown voltage Oct. 29, 1996
5496746 Method for fabricating a bipolar junction transistor exhibiting improved beta and punch-through characteristics Mar. 5, 1996
5453387 Fabrication method of semiconductor device with neighboring n- and p-type regions Sep. 26, 1995
5279976 Method for fabricating a semiconductor device having a shallow doped region Jan. 18, 1994
5137840 Vertical bipolar transistor with recessed epitaxially grown intrinsic base region Aug. 11, 1992
5128272 Self-aligned planar monolithic integrated circuit vertical transistor process Jul. 7, 1992
5098638 Method of manufacturing a semiconductor device Mar. 24, 1992
5064774 Self-aligned bipolar transistor process Nov. 12, 1991
5039624 Method of manufacturing a bipolar transistor Aug. 13, 1991
5023192 Method of manufacturing a bipolar transistor Jun. 11, 1991
5019523 Process for making polysilicon contacts to IC mesas May. 28, 1991
5010026 Process for making bipolar transistor Apr. 23, 1991
4946798 Semiconductor integrated circuit fabrication method Aug. 7, 1990
4902640 High speed double polycide bipolar/CMOS integrated circuit process Feb. 20, 1990
4849364 Semiconductor devices Jul. 18, 1989
4830972 Method of manufacturing bipolar transistor May. 16, 1989

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