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Class Information
Number: 438/37
Name: Semiconductor device manufacturing: process > Making device or circuit emissive of nonelectrical signal > Graded composition
Description: Process wherein the chemical composition of a semiconductor region of the substrate varies with location within the semiconductive region.


Patents under this class:
1 2 3

Patent Number Title Of Patent Date Issued
7449353 Co-doping for fermi level control in semi-insulating Group III nitrides Nov. 11, 2008
7437047 Optical materials with selected index-of-refraction Oct. 14, 2008
7399657 Ball grid array packages with thermally conductive containers Jul. 15, 2008
7368308 Methods of fabricating semiconductor heterostructures May. 6, 2008
7364697 System for infrared spectroscopic imaging of libraries Apr. 29, 2008
7271021 Light-emitting device with a current blocking structure and method for making the same Sep. 18, 2007
7259036 Methods of forming doped and un-doped strained semiconductor materials and semiconductor films by gas-cluster-ion-beam irradiation and materials and film products Aug. 21, 2007
7224882 Optical materials with selected index-of-refraction May. 29, 2007
7214598 Formation of lattice-tuning semiconductor substrates May. 8, 2007
7211458 Methods of fabricating strained semiconductor-on-insulator field-effect transistors and related devices May. 1, 2007
7052931 Flat panel display device with first electrode having concentration gradient and fabrication method thereof May. 30, 2006
7049627 Semiconductor heterostructures and related methods May. 23, 2006
7042023 Semiconductor light emitting device and method for producing the same May. 9, 2006
7042011 Compound semiconductor laser May. 9, 2006
7009224 Metamorphic long wavelength high-speed photodiode Mar. 7, 2006
7005681 Radiation-emitting semiconductor component and method for making same Feb. 28, 2006
6962828 Methods for manufacturing a light-emitting device Nov. 8, 2005
6888984 Amorphous silicon alloy based integrated spot-size converter May. 3, 2005
6881601 Nitride compound semiconductor, nitride compound semiconductor light emitting device and method of manufacturing the same Apr. 19, 2005
6864115 Low threading dislocation density relaxed mismatched epilayers without high temperature growth Mar. 8, 2005
6855570 Compound semiconductor laser Feb. 15, 2005
6853011 Light emitting diode and method of making the same Feb. 8, 2005
6841409 Group III-V compound semiconductor and group III-V compound semiconductor device using the same Jan. 11, 2005
6806502 3-5 Group compound semiconductor and light emitting device Oct. 19, 2004
6774389 Optical semiconductor device Aug. 10, 2004
6759312 Co-implantation of group VI elements and N for formation of non-alloyed ohmic contacts for n-type semiconductors Jul. 6, 2004
6727109 Method of fabricating long wavelength vertical-cavity surface-emitting lasers Apr. 27, 2004
6720196 Nitride-based semiconductor element and method of forming nitride-based semiconductor Apr. 13, 2004
6716655 Group III nitride compound semiconductor element and method for producing the same Apr. 6, 2004
6716654 Light-emitting diode with enhanced brightness and method for fabricating the same Apr. 6, 2004
6689626 Flexible substrate Feb. 10, 2004
6653158 Double intracavity contacted long-wavelength VCSELs and method of fabricating same Nov. 25, 2003
6627469 Methods for forming semiconductor lenses on substrates Sep. 30, 2003
6623998 Method for manufacturing group III nitride compound semiconductor device Sep. 23, 2003
6617188 Quantum well intermixing Sep. 9, 2003
6599133 Method for growing III-V compound semiconductor structures with an integral non-continuous quantum dot layer utilizing HVPE techniques Jul. 29, 2003
6597017 Semiconductor device, surface emitting semiconductor laser and edge emitting semiconductor laser Jul. 22, 2003
6589808 GaN type semiconductor device Jul. 8, 2003
6558973 Metamorphic long wavelength high-speed photodiode May. 6, 2003
6514784 Laser-induced bandgap shifting for photonic device integration Feb. 4, 2003
6503773 Low threading dislocation density relaxed mismatched epilayers without high temperature growth Jan. 7, 2003
6468818 Method for producing a high-luminance semiconductor light-emitting device capable of operating at a low voltage Oct. 22, 2002
6410943 Light emitting device contact layers having substantially equal spreading resistance and method of manufacture Jun. 25, 2002
6363092 Narrow spectral width high power distributed feedback semiconductor lasers Mar. 26, 2002
6342453 Method for CVD process control for enhancing device performance Jan. 29, 2002
6306672 Group III-V complex vertical cavity surface emitting laser diode and method for manufacturing the same Oct. 23, 2001
6258616 Method of making a semiconductor device having a non-alloyed ohmic contact to a buried doped layer Jul. 10, 2001
6221684 GaN based optoelectronic device and method for manufacturing the same Apr. 24, 2001
6194742 Strain engineered and impurity controlled III-V nitride semiconductor films and optoelectronic devices Feb. 27, 2001
6124147 Method for fabricating optoelectronic device in low-temperature deposition and thermal treatment Sep. 26, 2000

1 2 3


 
 
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