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Class Information
Number: 438/37
Name: Semiconductor device manufacturing: process > Making device or circuit emissive of nonelectrical signal > Graded composition
Description: Process wherein the chemical composition of a semiconductor region of the substrate varies with location within the semiconductive region.
Patents under this class:
| Patent Number |
Title Of Patent |
Date Issued |
| 7449353 |
Co-doping for fermi level control in semi-insulating Group III nitrides |
Nov. 11, 2008 |
| 7437047 |
Optical materials with selected index-of-refraction |
Oct. 14, 2008 |
| 7399657 |
Ball grid array packages with thermally conductive containers |
Jul. 15, 2008 |
| 7368308 |
Methods of fabricating semiconductor heterostructures |
May. 6, 2008 |
| 7364697 |
System for infrared spectroscopic imaging of libraries |
Apr. 29, 2008 |
| 7271021 |
Light-emitting device with a current blocking structure and method for making the same |
Sep. 18, 2007 |
| 7259036 |
Methods of forming doped and un-doped strained semiconductor materials and semiconductor films by gas-cluster-ion-beam irradiation and materials and film products |
Aug. 21, 2007 |
| 7224882 |
Optical materials with selected index-of-refraction |
May. 29, 2007 |
| 7214598 |
Formation of lattice-tuning semiconductor substrates |
May. 8, 2007 |
| 7211458 |
Methods of fabricating strained semiconductor-on-insulator field-effect transistors and related devices |
May. 1, 2007 |
| 7052931 |
Flat panel display device with first electrode having concentration gradient and fabrication method thereof |
May. 30, 2006 |
| 7049627 |
Semiconductor heterostructures and related methods |
May. 23, 2006 |
| 7042023 |
Semiconductor light emitting device and method for producing the same |
May. 9, 2006 |
| 7042011 |
Compound semiconductor laser |
May. 9, 2006 |
| 7009224 |
Metamorphic long wavelength high-speed photodiode |
Mar. 7, 2006 |
| 7005681 |
Radiation-emitting semiconductor component and method for making same |
Feb. 28, 2006 |
| 6962828 |
Methods for manufacturing a light-emitting device |
Nov. 8, 2005 |
| 6888984 |
Amorphous silicon alloy based integrated spot-size converter |
May. 3, 2005 |
| 6881601 |
Nitride compound semiconductor, nitride compound semiconductor light emitting device and method of manufacturing the same |
Apr. 19, 2005 |
| 6864115 |
Low threading dislocation density relaxed mismatched epilayers without high temperature growth |
Mar. 8, 2005 |
| 6855570 |
Compound semiconductor laser |
Feb. 15, 2005 |
| 6853011 |
Light emitting diode and method of making the same |
Feb. 8, 2005 |
| 6841409 |
Group III-V compound semiconductor and group III-V compound semiconductor device using the same |
Jan. 11, 2005 |
| 6806502 |
3-5 Group compound semiconductor and light emitting device |
Oct. 19, 2004 |
| 6774389 |
Optical semiconductor device |
Aug. 10, 2004 |
| 6759312 |
Co-implantation of group VI elements and N for formation of non-alloyed ohmic contacts for n-type semiconductors |
Jul. 6, 2004 |
| 6727109 |
Method of fabricating long wavelength vertical-cavity surface-emitting lasers |
Apr. 27, 2004 |
| 6720196 |
Nitride-based semiconductor element and method of forming nitride-based semiconductor |
Apr. 13, 2004 |
| 6716655 |
Group III nitride compound semiconductor element and method for producing the same |
Apr. 6, 2004 |
| 6716654 |
Light-emitting diode with enhanced brightness and method for fabricating the same |
Apr. 6, 2004 |
| 6689626 |
Flexible substrate |
Feb. 10, 2004 |
| 6653158 |
Double intracavity contacted long-wavelength VCSELs and method of fabricating same |
Nov. 25, 2003 |
| 6627469 |
Methods for forming semiconductor lenses on substrates |
Sep. 30, 2003 |
| 6623998 |
Method for manufacturing group III nitride compound semiconductor device |
Sep. 23, 2003 |
| 6617188 |
Quantum well intermixing |
Sep. 9, 2003 |
| 6599133 |
Method for growing III-V compound semiconductor structures with an integral non-continuous quantum dot layer utilizing HVPE techniques |
Jul. 29, 2003 |
| 6597017 |
Semiconductor device, surface emitting semiconductor laser and edge emitting semiconductor laser |
Jul. 22, 2003 |
| 6589808 |
GaN type semiconductor device |
Jul. 8, 2003 |
| 6558973 |
Metamorphic long wavelength high-speed photodiode |
May. 6, 2003 |
| 6514784 |
Laser-induced bandgap shifting for photonic device integration |
Feb. 4, 2003 |
| 6503773 |
Low threading dislocation density relaxed mismatched epilayers without high temperature growth |
Jan. 7, 2003 |
| 6468818 |
Method for producing a high-luminance semiconductor light-emitting device capable of operating at a low voltage |
Oct. 22, 2002 |
| 6410943 |
Light emitting device contact layers having substantially equal spreading resistance and method of manufacture |
Jun. 25, 2002 |
| 6363092 |
Narrow spectral width high power distributed feedback semiconductor lasers |
Mar. 26, 2002 |
| 6342453 |
Method for CVD process control for enhancing device performance |
Jan. 29, 2002 |
| 6306672 |
Group III-V complex vertical cavity surface emitting laser diode and method for manufacturing the same |
Oct. 23, 2001 |
| 6258616 |
Method of making a semiconductor device having a non-alloyed ohmic contact to a buried doped layer |
Jul. 10, 2001 |
| 6221684 |
GaN based optoelectronic device and method for manufacturing the same |
Apr. 24, 2001 |
| 6194742 |
Strain engineered and impurity controlled III-V nitride semiconductor films and optoelectronic devices |
Feb. 27, 2001 |
| 6124147 |
Method for fabricating optoelectronic device in low-temperature deposition and thermal treatment |
Sep. 26, 2000 |
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