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Class Information
Number: 438/368
Name: Semiconductor device manufacturing: process > Forming bipolar transistor by formation or alteration of semiconductive active regions > Self-aligned > Forming active region from adjacent doped polycrystalline or amorphous semiconductor > Simultaneously outdiffusing plural dopants from polysilicon or amorphous semiconductor
Description: Process including the simultaneous outdiffusing of electrically active dopants from the polysilicon or amorphous active region.
Patents under this class:
| Patent Number |
Title Of Patent |
Date Issued |
| 7566919 |
Method to reduce seedlayer topography in BICMOS process |
Jul. 28, 2009 |
| 7538004 |
Method of fabrication for SiGe heterojunction bipolar transistor (HBT) |
May. 26, 2009 |
| 7534691 |
Isolation structures for preventing photons and carriers from reaching active areas and methods of formation |
May. 19, 2009 |
| 7446009 |
Manufacturing method for semiconductor device |
Nov. 4, 2008 |
| 7410878 |
Polysilicon film having smooth surface and method of forming the same |
Aug. 12, 2008 |
| 7338875 |
Method of fabricating a semiconductor device having a toroidal-like junction |
Mar. 4, 2008 |
| 7232732 |
Semiconductor device with a toroidal-like junction |
Jun. 19, 2007 |
| 7217609 |
Semiconductor fabrication process, lateral PNP transistor, and integrated circuit |
May. 15, 2007 |
| 7211877 |
Chip scale surface mount package for semiconductor device and process of fabricating the same |
May. 1, 2007 |
| 7169674 |
Complementary metal oxide semiconductor (CMOS) gate stack with high dielectric constant gate dielectric and integrated diffusion barrier |
Jan. 30, 2007 |
| 7112500 |
Thin film transistor, liquid crystal display and manufacturing method thereof |
Sep. 26, 2006 |
| 7105415 |
Method for the production of a bipolar transistor |
Sep. 12, 2006 |
| 7005359 |
Bipolar junction transistor with improved extrinsic base region and method of fabrication |
Feb. 28, 2006 |
| 6881987 |
pMOS device having ultra shallow super-steep-retrograde epi-channel with dual channel doping and method for fabricating the same |
Apr. 19, 2005 |
| 6872638 |
Method of manufacturing a semiconductor device |
Mar. 29, 2005 |
| 6869854 |
Diffused extrinsic base and method for fabrication |
Mar. 22, 2005 |
| 6800541 |
Pulse laser irradiation method for forming a semiconductor thin film |
Oct. 5, 2004 |
| 6790737 |
Method for fabricating thin metal layers from the liquid phase |
Sep. 14, 2004 |
| 6740560 |
Bipolar transistor and method for producing same |
May. 25, 2004 |
| 6656812 |
Vertical bipolar transistor having little low-frequency noise and high current gain, and corresponding fabrication process |
Dec. 2, 2003 |
| 6642121 |
Control of amount and uniformity of oxidation at the interface of an emitter region of a monocrystalline silicon wafer and a polysilicon layer formed by chemical vapor deposition |
Nov. 4, 2003 |
| 6617220 |
Method for fabricating an epitaxial base bipolar transistor with raised extrinsic base |
Sep. 9, 2003 |
| 6506655 |
Bipolar transistor manufacturing method |
Jan. 14, 2003 |
| 6362034 |
Method of forming MOSFET gate electrodes having reduced depletion region growth sensitivity to applied electric field |
Mar. 26, 2002 |
| 6319786 |
Self-aligned bipolar transistor manufacturing method |
Nov. 20, 2001 |
| 6248650 |
Self-aligned BJT emitter contact |
Jun. 19, 2001 |
| 6194280 |
Method for forming a self-aligned BJT emitter contact |
Feb. 27, 2001 |
| 6180442 |
Bipolar transistor with an inhomogeneous emitter in a BICMOS integrated circuit method |
Jan. 30, 2001 |
| 6156594 |
Fabrication of bipolar/CMOS integrated circuits and of a capacitor |
Dec. 5, 2000 |
| 6130136 |
Bipolar transistor with L-shaped base-emitter spacer |
Oct. 10, 2000 |
| 6114208 |
Method for fabricating complementary MOS transistor |
Sep. 5, 2000 |
| 6080601 |
Method for forming a bipolar-based active pixel sensor cell with metal contact and increased capacitive coupling to the base region |
Jun. 27, 2000 |
| 6077752 |
Method in the manufacturing of a semiconductor device |
Jun. 20, 2000 |
| 6004855 |
Process for producing a high performance bipolar structure |
Dec. 21, 1999 |
| 5994196 |
Methods of forming bipolar junction transistors using simultaneous base and emitter diffusion techniques |
Nov. 30, 1999 |
| 5985728 |
Silicon on insulator process with recovery of a device layer from an etch stop layer |
Nov. 16, 1999 |
| 5940711 |
Method for making high-frequency bipolar transistor |
Aug. 17, 1999 |
| 5882976 |
Method of fabricating a self-aligned double polysilicon NPN transistor with poly etch stop |
Mar. 16, 1999 |
| 5866462 |
Double-spacer technique for forming a bipolar transistor with a very narrow emitter |
Feb. 2, 1999 |
| 5856228 |
Manufacturing method for making bipolar device having double polysilicon structure |
Jan. 5, 1999 |
| 5851858 |
Method for producing a multiplicity of microelectronic circuits on SOI |
Dec. 22, 1998 |
| 5846869 |
Method of manufacturing semiconductor integrated circuit device |
Dec. 8, 1998 |
| 5843828 |
Method for fabricating a semiconductor device with bipolar transistor |
Dec. 1, 1998 |
| 5804486 |
Process for manufacturing a high-frequency bipolar transistor structure |
Sep. 8, 1998 |
| 5773349 |
Method for making ultrahigh speed bipolar transistor |
Jun. 30, 1998 |
| 5736447 |
Method for manufacturing a bipolar junction transistor having a polysilicon emitter |
Apr. 7, 1998 |
| 5686322 |
Process for doping two levels of a double poly bipolar transistor after formation of second poly layer |
Nov. 11, 1997 |
| 5629219 |
Method for making a complementary bipolar transistor |
May. 13, 1997 |
| 5614422 |
Process for doping two levels of a double poly bipolar transistor after formation of second poly layer |
Mar. 25, 1997 |
| 5541120 |
Method of making complementary bipolar polysilicon emitter devices |
Jul. 30, 1996 |
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