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Class Information
Number: 438/368
Name: Semiconductor device manufacturing: process > Forming bipolar transistor by formation or alteration of semiconductive active regions > Self-aligned > Forming active region from adjacent doped polycrystalline or amorphous semiconductor > Simultaneously outdiffusing plural dopants from polysilicon or amorphous semiconductor
Description: Process including the simultaneous outdiffusing of electrically active dopants from the polysilicon or amorphous active region.










Patents under this class:
1 2 3

Patent Number Title Of Patent Date Issued
8552494 Semiconductor devices including elevated source and drain regions Oct. 8, 2013
8421183 Structure of very high insertion loss of the substrate noise decoupling Apr. 16, 2013
8409959 Vertically base-connected bipolar transistor Apr. 2, 2013
8377788 SiGe heterojunction bipolar transistor and method of forming a SiGe heterojunction bipolar transistor Feb. 19, 2013
8309446 Hybrid heterojunction solar cell fabrication using a doping layer mask Nov. 13, 2012
8227305 Memory array with ultra-thin etched pillar surround gate access transistors and buried data/bit lines Jul. 24, 2012
8071455 Isolation structures for preventing photons and carriers from reaching active areas and methods of formation Dec. 6, 2011
7915163 Method for forming doped polysilicon via connecting polysilicon layers Mar. 29, 2011
7902051 Method for fabrication of single crystal diodes for resistive memories Mar. 8, 2011
7867865 Methods of fabricating semiconductor devices including elevated source and drain regions Jan. 11, 2011
7842940 Structure and method to form semiconductor-on-pores (SOP) for high device performance and low manufacturing cost Nov. 30, 2010
7821044 Transistor with improved tip profile and method of manufacture thereof Oct. 26, 2010
7786553 Method of fabricating semiconductor device Aug. 31, 2010
7566919 Method to reduce seedlayer topography in BICMOS process Jul. 28, 2009
7538004 Method of fabrication for SiGe heterojunction bipolar transistor (HBT) May. 26, 2009
7534691 Isolation structures for preventing photons and carriers from reaching active areas and methods of formation May. 19, 2009
7446009 Manufacturing method for semiconductor device Nov. 4, 2008
7410878 Polysilicon film having smooth surface and method of forming the same Aug. 12, 2008
7338875 Method of fabricating a semiconductor device having a toroidal-like junction Mar. 4, 2008
7232732 Semiconductor device with a toroidal-like junction Jun. 19, 2007
7217609 Semiconductor fabrication process, lateral PNP transistor, and integrated circuit May. 15, 2007
7211877 Chip scale surface mount package for semiconductor device and process of fabricating the same May. 1, 2007
7169674 Complementary metal oxide semiconductor (CMOS) gate stack with high dielectric constant gate dielectric and integrated diffusion barrier Jan. 30, 2007
7112500 Thin film transistor, liquid crystal display and manufacturing method thereof Sep. 26, 2006
7105415 Method for the production of a bipolar transistor Sep. 12, 2006
7005359 Bipolar junction transistor with improved extrinsic base region and method of fabrication Feb. 28, 2006
6881987 pMOS device having ultra shallow super-steep-retrograde epi-channel with dual channel doping and method for fabricating the same Apr. 19, 2005
6872638 Method of manufacturing a semiconductor device Mar. 29, 2005
6869854 Diffused extrinsic base and method for fabrication Mar. 22, 2005
6800541 Pulse laser irradiation method for forming a semiconductor thin film Oct. 5, 2004
6790737 Method for fabricating thin metal layers from the liquid phase Sep. 14, 2004
6740560 Bipolar transistor and method for producing same May. 25, 2004
6656812 Vertical bipolar transistor having little low-frequency noise and high current gain, and corresponding fabrication process Dec. 2, 2003
6642121 Control of amount and uniformity of oxidation at the interface of an emitter region of a monocrystalline silicon wafer and a polysilicon layer formed by chemical vapor deposition Nov. 4, 2003
6617220 Method for fabricating an epitaxial base bipolar transistor with raised extrinsic base Sep. 9, 2003
6506655 Bipolar transistor manufacturing method Jan. 14, 2003
6362034 Method of forming MOSFET gate electrodes having reduced depletion region growth sensitivity to applied electric field Mar. 26, 2002
6319786 Self-aligned bipolar transistor manufacturing method Nov. 20, 2001
6248650 Self-aligned BJT emitter contact Jun. 19, 2001
6194280 Method for forming a self-aligned BJT emitter contact Feb. 27, 2001
6180442 Bipolar transistor with an inhomogeneous emitter in a BICMOS integrated circuit method Jan. 30, 2001
6156594 Fabrication of bipolar/CMOS integrated circuits and of a capacitor Dec. 5, 2000
6130136 Bipolar transistor with L-shaped base-emitter spacer Oct. 10, 2000
6114208 Method for fabricating complementary MOS transistor Sep. 5, 2000
6080601 Method for forming a bipolar-based active pixel sensor cell with metal contact and increased capacitive coupling to the base region Jun. 27, 2000
6077752 Method in the manufacturing of a semiconductor device Jun. 20, 2000
6004855 Process for producing a high performance bipolar structure Dec. 21, 1999
5994196 Methods of forming bipolar junction transistors using simultaneous base and emitter diffusion techniques Nov. 30, 1999
5985728 Silicon on insulator process with recovery of a device layer from an etch stop layer Nov. 16, 1999
5940711 Method for making high-frequency bipolar transistor Aug. 17, 1999

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