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Class Information
Number: 438/365
Name: Semiconductor device manufacturing: process > Forming bipolar transistor by formation or alteration of semiconductive active regions > Self-aligned > Forming active region from adjacent doped polycrystalline or amorphous semiconductor
Description: Process having an active region (e.g., base, emitter, or collector) formed of polycrystalline or amorphous semiconductor.
Sub-classes under this class:
Patents under this class:
| Patent Number |
Title Of Patent |
Date Issued |
| 7585740 |
Fully silicided extrinsic base transistor |
Sep. 8, 2009 |
| 7557010 |
Method to improve writer leakage in a SiGe bipolar device |
Jul. 7, 2009 |
| 7541250 |
Method for forming a self-aligned twin well region with simplified processing |
Jun. 2, 2009 |
| 7479438 |
Method to improve performance of a bipolar device using an amorphizing implant |
Jan. 20, 2009 |
| 7465638 |
Bipolar transistor and fabricating method thereof |
Dec. 16, 2008 |
| 7446009 |
Manufacturing method for semiconductor device |
Nov. 4, 2008 |
| 7425491 |
Nanowire transistor with surrounding gate |
Sep. 16, 2008 |
| 7343661 |
Method for making condenser microphones |
Mar. 18, 2008 |
| 7232732 |
Semiconductor device with a toroidal-like junction |
Jun. 19, 2007 |
| 7169677 |
Method for producing a spacer structure |
Jan. 30, 2007 |
| 7098113 |
Method and system for providing a power lateral PNP transistor using a buried power buss |
Aug. 29, 2006 |
| 7005359 |
Bipolar junction transistor with improved extrinsic base region and method of fabrication |
Feb. 28, 2006 |
| 6951802 |
Crystalline semiconductor film, method of manufacturing the same, and semiconductor device |
Oct. 4, 2005 |
| 6924216 |
Semiconductor device having improved doping profiles and method of improving the doping profiles of a semiconductor device |
Aug. 2, 2005 |
| 6919253 |
Method of forming a semiconductor device including simultaneously forming a single crystalline epitaxial layer and a polycrystalline or amorphous layer |
Jul. 19, 2005 |
| 6913981 |
Method of fabricating a bipolar transistor using selective epitaxially grown SiGe base layer |
Jul. 5, 2005 |
| 6910637 |
Stacked small memory card |
Jun. 28, 2005 |
| 6900519 |
Diffused extrinsic base and method for fabrication |
May. 31, 2005 |
| 6887765 |
Method for manufacturing a bipolar junction transistor |
May. 3, 2005 |
| 6878577 |
Method of forming LDD of semiconductor devices |
Apr. 12, 2005 |
| 6872638 |
Method of manufacturing a semiconductor device |
Mar. 29, 2005 |
| 6869854 |
Diffused extrinsic base and method for fabrication |
Mar. 22, 2005 |
| 6867105 |
Bipolar transistor and method of fabricating a bipolar transistor |
Mar. 15, 2005 |
| 6858512 |
Semiconductor device and method of producing the same |
Feb. 22, 2005 |
| 6830982 |
Method for reducing extrinsic base resistance and improving manufacturability in an NPN transistor |
Dec. 14, 2004 |
| 6815269 |
Thin-film transistor and method for manufacturing the same |
Nov. 9, 2004 |
| 6815302 |
Method of making a bipolar transistor with an oxygen implanted emitter window |
Nov. 9, 2004 |
| 6800541 |
Pulse laser irradiation method for forming a semiconductor thin film |
Oct. 5, 2004 |
| 6777756 |
Semiconductor device |
Aug. 17, 2004 |
| 6774002 |
Structure and method for forming self-aligned bipolar junction transistor with expitaxy base |
Aug. 10, 2004 |
| 6740563 |
Amorphizing ion implant method for forming polysilicon emitter bipolar transistor |
May. 25, 2004 |
| 6703266 |
Method for fabricating thin film transistor array and driving circuit |
Mar. 9, 2004 |
| 6699765 |
Method of fabricating a bipolar transistor using selective epitaxially grown SiGe base layer |
Mar. 2, 2004 |
| 6689668 |
Methods to improve density and uniformity of hemispherical grain silicon layers |
Feb. 10, 2004 |
| 6677214 |
Semiconductor device and method of fabricating the same |
Jan. 13, 2004 |
| 6607961 |
Method of definition of two self-aligned areas at the upper surface of a substrate |
Aug. 19, 2003 |
| 6521505 |
Manufacturing method of semiconductor device |
Feb. 18, 2003 |
| 6506655 |
Bipolar transistor manufacturing method |
Jan. 14, 2003 |
| 6472287 |
Manufacturing method of semiconductor with a cleansing agent |
Oct. 29, 2002 |
| 6468871 |
Method of forming bipolar transistor salicided emitter using selective laser annealing |
Oct. 22, 2002 |
| 6406966 |
Uniform emitter formation using selective laser recrystallization |
Jun. 18, 2002 |
| 6376322 |
Base-emitter region of a submicronic bipolar transistor |
Apr. 23, 2002 |
| 6362066 |
Method for manufacturing bipolar devices |
Mar. 26, 2002 |
| 6362034 |
Method of forming MOSFET gate electrodes having reduced depletion region growth sensitivity to applied electric field |
Mar. 26, 2002 |
| 6352901 |
Method of fabricating a bipolar junction transistor using multiple selectively implanted collector regions |
Mar. 5, 2002 |
| 6317174 |
TFT array substrate, liquid crystal display using TFT array substrate, and manufacturing method thereof |
Nov. 13, 2001 |
| 6303419 |
Method for fabricating a BiCMOS device featuring twin wells and an N type epitaxial layer |
Oct. 16, 2001 |
| 6300210 |
Method of manufacturing a semiconductor device comprising a bipolar transistor |
Oct. 9, 2001 |
| 6248650 |
Self-aligned BJT emitter contact |
Jun. 19, 2001 |
| 6225179 |
Semiconductor integrated bi-MOS circuit having isolating regions different in thickness between bipolar area and MOS area and process of fabrication thereof |
May. 1, 2001 |
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