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Class Information
Number: 438/363
Name: Semiconductor device manufacturing: process > Forming bipolar transistor by formation or alteration of semiconductive active regions > Including isolation structure > Recessed oxide by localized oxidation (i.e., locos) > With epitaxial semiconductor layer formation
Description: Process for making a bipolar transistor utilizing in addition to the recessed oxide the formation of an epitaxial semiconductor layer.

Patents under this class:
1 2 3

Patent Number Title Of Patent Date Issued
8603887 Method for depositing a silicon oxide layer of same thickness on silicon and on silicon-germanium Dec. 10, 2013
8574995 Source/drain doping method in 3D devices Nov. 5, 2013
8455336 Method for making epitaxial structure Jun. 4, 2013
8324063 Epitaxial film growing method, wafer supporting structure and susceptor Dec. 4, 2012
7910449 Semiconductor device and method of manufacturing the same Mar. 22, 2011
7892927 Transistor with a channel comprising germanium Feb. 22, 2011
7883954 Self-aligned epitaxially grown bipolar transistor Feb. 8, 2011
7838372 Methods of manufacturing semiconductor devices and structures thereof Nov. 23, 2010
7772060 Integrated SiGe NMOS and PMOS transistors Aug. 10, 2010
7378324 Selective links in silicon hetero-junction bipolar transistors using carbon doping and method of forming same May. 27, 2008
7033895 Method of fabricating a MOS transistor with elevated source/drain structure using a selective epitaxial growth process Apr. 25, 2006
6881641 Semiconductor device having a retrograde dopant profile in a channel region and method for fabricating the same Apr. 19, 2005
6767798 Method of forming self-aligned NPN transistor with raised extrinsic base Jul. 27, 2004
6699760 Method for growing layers of group III-nitride semiconductor having electrically passivated threading defects Mar. 2, 2004
6624045 Thermal conducting trench in a seminconductor structure and method for forming the same Sep. 23, 2003
6593200 Method of forming an integrated inductor and high speed interconnect in a planarized process with shallow trench isolation Jul. 15, 2003
6579774 Semiconductor device fabrication method Jun. 17, 2003
6503773 Low threading dislocation density relaxed mismatched epilayers without high temperature growth Jan. 7, 2003
6444591 Method for reducing contamination prior to epitaxial growth and related structure Sep. 3, 2002
6436780 Semiconductor device Aug. 20, 2002
6331470 Process for manufacturing a semiconductor material wafer having power regions dielectrically insulated from circuitry regions Dec. 18, 2001
6313000 Process for formation of vertically isolated bipolar transistor device Nov. 6, 2001
6297118 Vertical bipolar semiconductor power transistor with an interdigitzed geometry, with optimization of the base-to-emitter potential difference Oct. 2, 2001
6242313 Use of polysilicon field plates to improve high voltage bipolar device breakdown voltage Jun. 5, 2001
6228733 Non-selective epitaxial depostion technology May. 8, 2001
6171894 Method of manufacturing BICMOS integrated circuits on a conventional CMOS substrate Jan. 9, 2001
6140196 Method of fabricating high power bipolar junction transistor Oct. 31, 2000
6057184 Semiconductor device fabrication method using connecting implants May. 2, 2000
6020246 Forming a self-aligned epitaxial base bipolar transistor Feb. 1, 2000
6015726 Semiconductor device and method of producing the same Jan. 18, 2000
6010937 Reduction of dislocations in a heteroepitaxial semiconductor structure Jan. 4, 2000
5909623 Manufacturing method of semiconductor device Jun. 1, 1999
5866446 Method of manufacturing bimos device Feb. 2, 1999
5677209 Method for fabricating a vertical bipolar transistor Oct. 14, 1997
5646055 Method for making bipolar transistor Jul. 8, 1997
5643808 Process of manufacturing a semiconductor device Jul. 1, 1997
5580798 Method of fabricating bipolar transistor having a guard ring Dec. 3, 1996
5512508 Method and apparatus for improvement of interconnection capacitance Apr. 30, 1996
5500378 Process for forming a bipolar type semiconductor device Mar. 19, 1996
5416039 Method of making BiCDMOS structures May. 16, 1995
5403758 Process of forming a bipolar type semiconductor device Apr. 4, 1995
5389553 Methods for fabrication of transistors Feb. 14, 1995
5389563 Method of fabricating a bipolar transistor having a high ion concentration buried floating collector Feb. 14, 1995
5376564 Method of manufacturing a bipolar transistor having a decreased collector-base capacitance Dec. 27, 1994
5366907 Method of fabricating a BI-CMOS integrated circuit device Nov. 22, 1994
5364802 Method of making a semiconductor device with buried electrode Nov. 15, 1994
5352617 Method for manufacturing Bi-CMOS transistor devices Oct. 4, 1994
5328858 Method for producing the bipolar transistor Jul. 12, 1994
5324672 Manufacturing method for bipolar transistor Jun. 28, 1994
5294558 Method of making double-self-aligned bipolar transistor structure Mar. 15, 1994

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