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Class Information
Number: 438/361
Name: Semiconductor device manufacturing: process > Forming bipolar transistor by formation or alteration of semiconductive active regions > Including isolation structure > Dielectric isolation formed by grooving and refilling with dielectrical material > Including deposition of polysilicon or noninsulative material into groove
Description: Process for making a bipolar transistor wherein a noninsulative material is deposited into the groove in addition to the insulative material.
Patents under this class:
| Patent Number |
Title Of Patent |
Date Issued |
| 7615841 |
Design structure for coupling noise prevention |
Nov. 10, 2009 |
| 7491618 |
Methods and semiconductor structures for latch-up suppression using a conductive region |
Feb. 17, 2009 |
| 7456061 |
Method to reduce boron penetration in a SiGe bipolar device |
Nov. 25, 2008 |
| 7456071 |
Method for forming a strongly-conductive buried layer in a semiconductor substrate |
Nov. 25, 2008 |
| 7432169 |
Method for manufacturing semiconductor device |
Oct. 7, 2008 |
| 7378326 |
Printed circuit board with embedded capacitors therein and manufacturing process thereof |
May. 27, 2008 |
| 7268043 |
Semiconductor device and method of manufacturing the same |
Sep. 11, 2007 |
| 7259069 |
Semiconductor device and method of manufacturing the same |
Aug. 21, 2007 |
| 7180159 |
Bipolar transistor having base over buried insulating and polycrystalline regions |
Feb. 20, 2007 |
| 7176120 |
Method of manufacturing semiconductor device |
Feb. 13, 2007 |
| 7151035 |
Semiconductor device and manufacturing method thereof |
Dec. 19, 2006 |
| 7091085 |
Reduced cell-to-cell shorting for memory arrays |
Aug. 15, 2006 |
| 7042063 |
Semiconductor wafer, semiconductor device, and process for manufacturing the semiconductor device |
May. 9, 2006 |
| 7015115 |
Method for forming deep trench isolation and related structure |
Mar. 21, 2006 |
| 6979625 |
Copper interconnects with metal capping layer and selective copper alloys |
Dec. 27, 2005 |
| 6974743 |
Method of making encapsulated spacers in vertical pass gate DRAM and damascene logic gates |
Dec. 13, 2005 |
| 6936519 |
Double polysilicon bipolar transistor and method of manufacture therefor |
Aug. 30, 2005 |
| 6927112 |
Radical processing of a sub-nanometer insulation film |
Aug. 9, 2005 |
| 6900105 |
Semiconductor device and method of manufacture |
May. 31, 2005 |
| 6884687 |
SEMICONDUCTOR PROCESSING METHODS OF FORMING INTEGRATED CIRCUITRY, FORMING CONDUCTIVE LINES, FORMING A CONDUCTIVE GRID, FORMING A CONDUCTIVE NETWORK, FORMING AN ELECTRICAL INTERCONNECTION TO A |
Apr. 26, 2005 |
| 6878605 |
Methods for manufacturing SOI substrate using wafer bonding and complementary high voltage bipolar transistor using the SOI substrate |
Apr. 12, 2005 |
| 6875649 |
Methods for manufacturing integrated circuit devices including an isolation region defining an active region area |
Apr. 5, 2005 |
| 6869852 |
Self-aligned raised extrinsic base bipolar transistor structure and method |
Mar. 22, 2005 |
| 6861311 |
SEMICONDUCTOR PROCESSING METHODS OF FORMING INTEGRATED CIRCUITRY, FORMING CONDUCTIVE LINES, FORMING A CONDUCTIVE GRID, FORMING A CONDUCTIVE NETWORK, FORMING AN ELECTRICAL INTERCONNECTION TO A |
Mar. 1, 2005 |
| 6861326 |
Methods of forming semiconductor circuitry |
Mar. 1, 2005 |
| 6858511 |
Method of semiconductor via testing |
Feb. 22, 2005 |
| 6846710 |
Method for manufacturing self-aligned BiCMOS |
Jan. 25, 2005 |
| 6830977 |
METHODS OF FORMING AN ISOLATION TRENCH IN A SEMICONDUCTOR, METHODS OF FORMING AN ISOLATION TRENCH IN A SURFACE OF A SILICON WAFER, METHODS OF FORMING AN ISOLATION TRENCH-ISOLATED TRANSISTOR, T |
Dec. 14, 2004 |
| 6828649 |
Semiconductor device having an interconnect that electrically connects a conductive material and a doped layer, and a method of manufacture therefor |
Dec. 7, 2004 |
| 6815827 |
Electrical connection between two faces of a substrate and manufacturing process |
Nov. 9, 2004 |
| 6780725 |
METHOD FOR FORMING A SEMICONDUCTOR DEVICE INCLUDING FORMING VERTICAL NPN AND PNP TRANSISTORS BY EXPOSING THE EPITAXIAL LAYER, FORMING A MONOCRYSTAL LAYER AND ADJUSTING THE IMPURITY CONCENTRATI |
Aug. 24, 2004 |
| 6750526 |
Semiconductor device with trench isolation having reduced leak current |
Jun. 15, 2004 |
| 6737688 |
Method for manufacturing semiconductor device |
May. 18, 2004 |
| 6727157 |
Method for forming a shallow trench isolation using air gap |
Apr. 27, 2004 |
| 6683364 |
Integrated circuit devices including an isolation region defining an active region area and methods for manufacturing the same |
Jan. 27, 2004 |
| 6674146 |
Composite dielectric layers |
Jan. 6, 2004 |
| 6649482 |
Bipolar transistor with a silicon germanium base and an ultra small self-aligned polysilicon emitter and method of forming the transistor |
Nov. 18, 2003 |
| 6597053 |
Integrated circuit arrangement with a number of structural elements and method for the production thereof |
Jul. 22, 2003 |
| 6589851 |
Semiconductor processing methods of forming a conductive grid |
Jul. 8, 2003 |
| 6570239 |
Semiconductor device having resistive element |
May. 27, 2003 |
| 6433380 |
Integrated circuit capacitors having composite titanium oxide and tantalum pentoxide dielectric layers therein |
Aug. 13, 2002 |
| 6432809 |
Method for improved passive thermal flow in silicon on insulator devices |
Aug. 13, 2002 |
| 6399452 |
Method of fabricating transistors with low thermal budget |
Jun. 4, 2002 |
| 6383847 |
Partitioned mask layout |
May. 7, 2002 |
| 6383837 |
Method of manufacturing a multi-chip semiconductor device effective to improve alignment |
May. 7, 2002 |
| 6344399 |
Method of forming conductive lines and method of forming a conductive grid |
Feb. 5, 2002 |
| 6333235 |
Method for forming SiGe bipolar transistor |
Dec. 25, 2001 |
| 6271068 |
Method for making improved polysilicon emitters for bipolar transistors on BiCMOS integrated circuits |
Aug. 7, 2001 |
| 6255184 |
Fabrication process for a three dimensional trench emitter bipolar transistor |
Jul. 3, 2001 |
| 6184092 |
Self-aligned contact for trench DMOS transistors |
Feb. 6, 2001 |
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