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Class Information
Number: 438/36
Name: Semiconductor device manufacturing: process > Making device or circuit emissive of nonelectrical signal > Ordered or disordered
Description: Process for making a semiconductor device wherein a compound semiconductor region is ordered or disordered.
Patents under this class:
| Patent Number |
Title Of Patent |
Date Issued |
| 7579627 |
Nitride semiconductor light-emitting device, method of fabricating it, and semiconductor optical apparatus |
Aug. 25, 2009 |
| 7575947 |
Method for enhancing growth of semi-polar (Al,In,Ga,B)N via metalorganic chemical vapor deposition |
Aug. 18, 2009 |
| 7482631 |
Film formation apparatus and film formation method |
Jan. 27, 2009 |
| 7410856 |
Methods of forming vertical transistors |
Aug. 12, 2008 |
| 7399657 |
Ball grid array packages with thermally conductive containers |
Jul. 15, 2008 |
| 7344905 |
Spatial bandgap modifications and energy shift of semiconductor structures |
Mar. 18, 2008 |
| 7211458 |
Methods of fabricating strained semiconductor-on-insulator field-effect transistors and related devices |
May. 1, 2007 |
| 7151004 |
Method of fabricating semiconductor laser |
Dec. 19, 2006 |
| 7067846 |
Semiconductor light-emitting device, surface-emission laser diode, and production apparatus thereof, production method, optical module and optical telecommunication system |
Jun. 27, 2006 |
| 7049157 |
Calibration standard for critical dimension verification of sub-tenth micron integrated circuit technology |
May. 23, 2006 |
| 7037743 |
Semiconductor device and method for producing the same |
May. 2, 2006 |
| 7005681 |
Radiation-emitting semiconductor component and method for making same |
Feb. 28, 2006 |
| 6989286 |
Method of manufacturing optical devices and related improvements |
Jan. 24, 2006 |
| 6984538 |
Method for quantum well intermixing using pre-annealing enhanced defects diffusion |
Jan. 10, 2006 |
| 6962828 |
Methods for manufacturing a light-emitting device |
Nov. 8, 2005 |
| 6947311 |
Two-dimensional structural transition controlled by an electric field, memory storage device thereof, and method of making a memory storage device |
Sep. 20, 2005 |
| 6936488 |
Homoepitaxial gallium-nitride-based light emitting device and method for producing |
Aug. 30, 2005 |
| 6920167 |
Semiconductor laser device and method for fabricating thereof |
Jul. 19, 2005 |
| 6881601 |
Nitride compound semiconductor, nitride compound semiconductor light emitting device and method of manufacturing the same |
Apr. 19, 2005 |
| 6878562 |
Method for shifting the bandgap energy of a quantum well layer |
Apr. 12, 2005 |
| 6806114 |
Broadly tunable distributed bragg reflector structure processing |
Oct. 19, 2004 |
| 6750158 |
Method for producing a semiconductor device |
Jun. 15, 2004 |
| 6727109 |
Method of fabricating long wavelength vertical-cavity surface-emitting lasers |
Apr. 27, 2004 |
| 6720196 |
Nitride-based semiconductor element and method of forming nitride-based semiconductor |
Apr. 13, 2004 |
| 6716654 |
Light-emitting diode with enhanced brightness and method for fabricating the same |
Apr. 6, 2004 |
| 6716655 |
Group III nitride compound semiconductor element and method for producing the same |
Apr. 6, 2004 |
| 6689626 |
Flexible substrate |
Feb. 10, 2004 |
| 6653248 |
Doped semiconductor material, a method of manufacturing the doped semiconductor material, and a semiconductor device |
Nov. 25, 2003 |
| 6653158 |
Double intracavity contacted long-wavelength VCSELs and method of fabricating same |
Nov. 25, 2003 |
| 6617188 |
Quantum well intermixing |
Sep. 9, 2003 |
| 6599133 |
Method for growing III-V compound semiconductor structures with an integral non-continuous quantum dot layer utilizing HVPE techniques |
Jul. 29, 2003 |
| 6597017 |
Semiconductor device, surface emitting semiconductor laser and edge emitting semiconductor laser |
Jul. 22, 2003 |
| 6569695 |
Method for monitoring particles and defects on wafer surface and in process |
May. 27, 2003 |
| 6555407 |
Method for the controlled oxidiation of materials |
Apr. 29, 2003 |
| 6514784 |
Laser-induced bandgap shifting for photonic device integration |
Feb. 4, 2003 |
| 6498114 |
Method for forming a patterned semiconductor film |
Dec. 24, 2002 |
| 6363092 |
Narrow spectral width high power distributed feedback semiconductor lasers |
Mar. 26, 2002 |
| 6265329 |
Quantum deposition distribution control |
Jul. 24, 2001 |
| 6232138 |
Relaxed InxGa(1-x)as buffers |
May. 15, 2001 |
| 6190936 |
Interconnect passivation and metallization process optimized to maximize reflectance |
Feb. 20, 2001 |
| 6071751 |
Deuterium sintering with rapid quenching |
Jun. 6, 2000 |
| 6051446 |
Thin liquid crystal transducer pixel cell having self-aligned support pillars |
Apr. 18, 2000 |
| 6027953 |
Lateral PN arrayed digital X-ray image sensor |
Feb. 22, 2000 |
| 5976905 |
Method of manufacturing VCSEL arrays using vapor phase epitaxy to achieve uniform device-to-device operating characteristics |
Nov. 2, 1999 |
| 5930591 |
High resolution, low voltage flat-panel radiation imaging sensors |
Jul. 27, 1999 |
| 5766981 |
Thermally processed, phosphorus- or arsenic-containing semiconductor laser with selective IILD |
Jun. 16, 1998 |
| 5714403 |
Process for producing a matrix of "all optical" vertically-structured quantum well components |
Feb. 3, 1998 |
| 5707890 |
Method of shifting a wavelength in a semiconductor structure having quantum wells |
Jan. 13, 1998 |
| 5648295 |
Method of making a semiconductor laser device |
Jul. 15, 1997 |
| 5563094 |
Buried reverse bias junction configurations in semiconductor structures employing photo induced evaporation enhancement during in situ epitaxial growth and device structures utilizing the same |
Oct. 8, 1996 |
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