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Class Information
Number: 438/359
Name: Semiconductor device manufacturing: process > Forming bipolar transistor by formation or alteration of semiconductive active regions > Including isolation structure > Dielectric isolation formed by grooving and refilling with dielectrical material
Description: Process for making a bipolar transistor involving the formation of a recess in the semiconductor followed by the refilling of the recess with an insulative material.
Sub-classes under this class:
Patents under this class:
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Date Issued |
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Array of vertical bipolar junction transistors, in particular selectors in a phase change memory device |
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Method for forming shallow trench isolation in semiconductor device |
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Method of forming the semiconductor device |
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Semiconductor device with trench type device isolation layer and method for fabricating the same |
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STI of a semiconductor device and fabrication method thereof |
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Angled implant for trench isolation |
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Dielectric isolation type semiconductor device and manufacturing method therefor |
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Jul. 8, 2008 |
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7354812 |
Multiple-depth STI trenches in integrated circuit fabrication |
Apr. 8, 2008 |
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Non-volatile memory device and method of fabricating the same |
Mar. 18, 2008 |
7279381 |
Method for fabricating cell transistor of flash memory |
Oct. 9, 2007 |
7247534 |
Silicon device on Si:C-OI and SGOI and method of manufacture |
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Method for four direction low capacitance ESD protection |
Feb. 20, 2007 |
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Method of making uniform oxide layer |
Feb. 6, 2007 |
7169654 |
Method of forming a semiconductor device |
Jan. 30, 2007 |
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Transistor structure having reduced transistor leakage attributes |
Jan. 2, 2007 |
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