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Class Information
Number: 438/355
Name: Semiconductor device manufacturing: process > Forming bipolar transistor by formation or alteration of semiconductive active regions > Including isolation structure > Total dielectrical isolation
Description: Process for making a bipolar transistor which is fully electrically isolated by dielectric insulative material from laterally adjacent semiconductive regions.

Patents under this class:
1 2 3

Patent Number Title Of Patent Date Issued
8692266 Circuit substrate structure Apr. 8, 2014
8685830 Method of filling shallow trenches Apr. 1, 2014
8183574 Thermal isolation of electronic devices in submount used for LEDs lighting applications May. 22, 2012
8071454 Method for manufacturing dielectric isolation type semiconductor device Dec. 6, 2011
7989894 Fusion bonding process and structure for fabricating silicon-on-insulation (SOI) semiconductor devices Aug. 2, 2011
7939417 Bipolar transistor and back-gated transistor structure and method May. 10, 2011
7939914 Dual wired integrated circuit chips May. 10, 2011
7872326 Array of vertical bipolar junction transistors, in particular selectors in a phase change memory device Jan. 18, 2011
7842577 Two-step STI formation process Nov. 30, 2010
7709897 Fusion bonding process and structure for fabricating silicon-on-insulator (SOI) semiconductor devices May. 4, 2010
7595253 Method of forming the semiconductor device Sep. 29, 2009
7390696 Wafer, semiconductor device, and fabrication methods therefor Jun. 24, 2008
7354812 Multiple-depth STI trenches in integrated circuit fabrication Apr. 8, 2008
7327012 Bipolar Transistor Devices Feb. 5, 2008
7279769 Semiconductor device and manufacturing method thereof Oct. 9, 2007
7217629 Epitaxial imprinting May. 15, 2007
7172914 Method of making uniform oxide layer Feb. 6, 2007
7135364 Method of fabricating semiconductor integrated circuit Nov. 14, 2006
7060585 Hybrid orientation substrates by in-place bonding and amorphization/templated recrystallization Jun. 13, 2006
6964907 Method of etching a lateral trench under an extrinsic base and improved bipolar transistor Nov. 15, 2005
6955957 Method of forming a floating gate in a flash memory device Oct. 18, 2005
6951826 Silicon carbide deposition for use as a low dielectric constant anti-reflective coating Oct. 4, 2005
6943088 Method of manufacturing a trench isolation structure for a semiconductor device with a different degree of corner rounding Sep. 13, 2005
6900108 High temperature sensors utilizing doping controlled, dielectrically isolated beta silicon carbide (SiC) sensing elements on a specifically selected high temperature force collecting membrane May. 31, 2005
6867495 Integrated circuit having a device wafer with a diffused doped backside layer Mar. 15, 2005
6822325 Isolating temperature sensitive components from heat sources in integrated circuits Nov. 23, 2004
6815794 Semiconductor devices with multiple isolation structure and methods for fabricating the same Nov. 9, 2004
6787880 ESD parasitic bipolar transistors with high resistivity regions in the collector Sep. 7, 2004
6764922 Method of formation of an oxynitride shallow trench isolation Jul. 20, 2004
6759303 Complementary vertical bipolar junction transistors fabricated of silicon-on-sapphire utilizing wide base PNP transistors Jul. 6, 2004
6729886 Method of fabricating a drain isolated LDMOS device May. 4, 2004
6693325 Semiconductor device having silicon on insulator and fabricating method therefor Feb. 17, 2004
6627515 Method of fabricating a non-floating body device with enhanced performance Sep. 30, 2003
6620654 Method for fabricating a simplified CMOS polysilicon thin film transistor and resulting structure Sep. 16, 2003
6589833 ESD parasitic bipolar transistors with high resistivity regions in the collector Jul. 8, 2003
6562694 Method of manufacturing a semiconductor device comprising semiconductor elements formed in a toplayer of a silicon wafer situated on a buried insulating layer May. 13, 2003
6406976 Semiconductor device and process for forming the same Jun. 18, 2002
6395593 Method of manufacturing high side and low side guard rings for lowest parasitic performance in an H-bridge configuration May. 28, 2002
6335230 Method for fabricating a simplified CMOS polysilicon thin film transistor and resulting structure Jan. 1, 2002
6331470 Process for manufacturing a semiconductor material wafer having power regions dielectrically insulated from circuitry regions Dec. 18, 2001
6326292 Semiconductor component and manufacturing method for semiconductor component Dec. 4, 2001
6316815 Structure for isolating integrated circuits in semiconductor substrate and method for making it Nov. 13, 2001
6313000 Process for formation of vertically isolated bipolar transistor device Nov. 6, 2001
6303487 Method for forming an air gap in an insulating film between adjacent interconnection conductors in a semiconductor device Oct. 16, 2001
6300173 Method and device relating to semiconductor components Oct. 9, 2001
6225181 Trench isolated bipolar transistor structure integrated with CMOS technology May. 1, 2001
6146970 Capped shallow trench isolation and method of formation Nov. 14, 2000
6140160 Method for fabricating a simplified CMOS polysilicon thin film transistor and resulting structure Oct. 31, 2000
6071769 Method for forming a resistor load of a static random access memory Jun. 6, 2000
5982006 Active silicon-on-insulator region having a buried insulation layer with tapered edge Nov. 9, 1999

1 2 3

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