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Class Information
Number: 438/351
Name: Semiconductor device manufacturing: process > Forming bipolar transistor by formation or alteration of semiconductive active regions > Direct application of electrical current
Description: Process for making a bipolar transistor involving having a step of directly applying an electric current to the semiconductor substrate.

Patents under this class:

Patent Number Title Of Patent Date Issued
7915144 Methods for forming thermotunnel generators having closely-spaced electrodes Mar. 29, 2011
6432776 Method of manufacturing semiconductor device Aug. 13, 2002
6306692 Coplanar type polysilicon thin film transistor and method of manufacturing the same Oct. 23, 2001
6165828 Structure and method for gated lateral bipolar transistors Dec. 26, 2000
6143586 Electrostatic protected substrate Nov. 7, 2000
5856213 Method of fabricating a programmable function system block using two masks and a sacrificial oxide layer between the bottom metal and an amorphous silicon antifuse structure Jan. 5, 1999
4910159 Method for incrementally increasing the collector area of a lateral PNP transistor during electrical testing of an integrated device on wafer Mar. 20, 1990
4874711 Method for altering characteristics of active semiconductor devices Oct. 17, 1989
4569121 Method of fabricating a programmable read-only memory cell incorporating an antifuse utilizing deposition of amorphous semiconductor layer Feb. 11, 1986
4488349 Method of repairing shorts in parallel connected vertical semiconductor devices by selective anodization Dec. 18, 1984
4403399 Method of fabricating a vertical fuse utilizing epitaxial deposition and special masking Sep. 13, 1983
3999282 Method for manufacturing semiconductor devices having oxide films and the semiconductor devices manufactured thereby Dec. 28, 1976

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