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Class Information
Number: 438/349
Name: Semiconductor device manufacturing: process > Forming bipolar transistor by formation or alteration of semiconductive active regions > Pedestal base
Description: Process for making a bipolar transistor wherein the base region is provided with a projecting portion.

Patents under this class:
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Patent Number Title Of Patent Date Issued
8669603 Semiconductor constructions Mar. 11, 2014
8546230 Bipolar transistor with a collector having a protected outer edge portion for reduced based-collector junction capacitance and a method of forming the transistor Oct. 1, 2013
8536012 Bipolar junction transistors with a link region connecting the intrinsic and extrinsic bases Sep. 17, 2013
8530288 Methods of forming memory arrays and semiconductor constructions Sep. 10, 2013
8519443 Method for making a heterojunction bipolar transistor Aug. 27, 2013
8431966 Method of manufacturing a bipolar transistor semiconductor device and semiconductor devices obtained thereby Apr. 30, 2013
8344436 Semiconductor constructions and electronic systems Jan. 1, 2013
8093132 Method of manufacturing a bipolar junction transistor Jan. 10, 2012
8048734 Bipolar transistor and method for making same Nov. 1, 2011
8013376 Memory arrays, semiconductor constructions and electronic systems with transistor gates extending partially over SOI and unit cells within active region pedestals Sep. 6, 2011
7888225 Method of manufacturing an electronic device including a PNP bipolar transistor Feb. 15, 2011
7838375 System and method for providing a polyemit module for a self aligned heterojunction bipolar transistor architecture Nov. 23, 2010
7611954 Bipolar transistor self-alignment with raised extrinsic base extension and methods of forming same Nov. 3, 2009
7541249 Process for producing a base connection of a bipolar transistor Jun. 2, 2009
7364976 Selective etch for patterning a semiconductor film deposited non-selectively Apr. 29, 2008
7091082 Semiconductor method and device Aug. 15, 2006
7074685 Method of fabrication SiGe heterojunction bipolar transistor Jul. 11, 2006
6967144 Low doped base spacer for reduction of emitter-base capacitance in bipolar transistors with selectively grown epitaxial base Nov. 22, 2005
6930011 Semiconductor device with a bipolar transistor, and method of manufacturing such a device Aug. 16, 2005
6924203 Double HBT base metal micro-bridge Aug. 2, 2005
6855614 Sidewalls as semiconductor etch stop and diffusion barrier Feb. 15, 2005
6847061 Elimination of implant damage during manufacture of HBT Jan. 25, 2005
6780695 BiCMOS integration scheme with raised extrinsic base Aug. 24, 2004
6767798 Method of forming self-aligned NPN transistor with raised extrinsic base Jul. 27, 2004
6764918 Structure and method of making a high performance semiconductor device having a narrow doping profile Jul. 20, 2004
6713361 Method of manufacturing a bipolar junction transistor including undercutting regions adjacent to the emitter region to enlarge the emitter region Mar. 30, 2004
6617220 Method for fabricating an epitaxial base bipolar transistor with raised extrinsic base Sep. 9, 2003
6551889 Method of producing a SI-GE base heterojunction bipolar device Apr. 22, 2003
6506659 High performance bipolar transistor Jan. 14, 2003
6482712 Method for fabricating a bipolar semiconductor device Nov. 19, 2002
6180442 Bipolar transistor with an inhomogeneous emitter in a BICMOS integrated circuit method Jan. 30, 2001
6156594 Fabrication of bipolar/CMOS integrated circuits and of a capacitor Dec. 5, 2000
6153488 Method for producing semiconductor device, and semiconductor device produced by same Nov. 28, 2000
6020246 Forming a self-aligned epitaxial base bipolar transistor Feb. 1, 2000
5976941 Ultrahigh vacuum deposition of silicon (Si-Ge) on HMIC substrates Nov. 2, 1999
5824589 Method for forming bipolar transistor having a reduced base transit time Oct. 20, 1998
5391503 Method of forming a stacked semiconductor device wherein semiconductor layers and insulating films are sequentially stacked and forming openings through such films and etchings using one of th Feb. 21, 1995
5350700 Method of fabricating bipolar transistors with buried collector region Sep. 27, 1994
5234844 Process for forming bipolar transistor structure Aug. 10, 1993
5106767 Process for fabricating low capacitance bipolar junction transistor Apr. 21, 1992
5091323 Process for the fabrication of bipolar device Feb. 25, 1992
5064772 Bipolar transistor integrated circuit technology Nov. 12, 1991
5059544 Method of forming bipolar transistor having self-aligned emitter-base using selective and non-selective epitaxy Oct. 22, 1991
4876212 Process for fabricating complimentary semiconductor devices having pedestal structures Oct. 24, 1989
4851362 Method for manufacturing a semiconductor device Jul. 25, 1989
4849371 Monocrystalline semiconductor buried layers for electrical contacts to semiconductor devices Jul. 18, 1989
4829016 Bipolar transistor by selective and lateral epitaxial overgrowth May. 9, 1989
4728391 Pedestal transistors and method of production thereof Mar. 1, 1988
4609413 Method for manufacturing and epitaxially isolated semiconductor utilizing etch and refill technique Sep. 2, 1986
4508579 Lateral device structures using self-aligned fabrication techniques Apr. 2, 1985

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