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Class Information
Number: 438/348
Name: Semiconductor device manufacturing: process > Forming bipolar transistor by formation or alteration of semiconductive active regions > Sidewall base contact
Description: Process for making a bipolar transistor wherein a conductive layer serving as the base electrode makes contact to the sidewall of the base region.










Patents under this class:
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Patent Number Title Of Patent Date Issued
8664698 Bipolar transistor and method with recessed base electrode Mar. 4, 2014
8501572 Spacer structure for transistor device and method of manufacturing same Aug. 6, 2013
8470679 Semiconductor device including a deep contact and a method of manufacturing such a device Jun. 25, 2013
8409959 Vertically base-connected bipolar transistor Apr. 2, 2013
8404552 Microscopic spectrum apparatus Mar. 26, 2013
8309416 Semiconductor device with buried bit lines interconnected to one-side-contact and fabrication method thereof Nov. 13, 2012
8227889 Semiconductor device Jul. 24, 2012
8084314 Semiconductor device and manufacturing method thereof Dec. 27, 2011
7943470 Chip-stacked semiconductor device and manufacturing method thereof May. 17, 2011
7868413 Semiconductor device Jan. 11, 2011
7615841 Design structure for coupling noise prevention Nov. 10, 2009
7397070 Self-aligned transistor Jul. 8, 2008
7358131 Methods of forming SRAM constructions Apr. 15, 2008
7300850 Method of forming a self-aligned transistor Nov. 27, 2007
7180159 Bipolar transistor having base over buried insulating and polycrystalline regions Feb. 20, 2007
7151035 Semiconductor device and manufacturing method thereof Dec. 19, 2006
7087959 Metal-oxide-semiconductor device having an enhanced shielding structure Aug. 8, 2006
7005723 Bipolar transistor and method of producing same Feb. 28, 2006
6943428 Semiconductor device including bipolar transistor and buried conductive region Sep. 13, 2005
6930010 Method of forming a conductive structure in a semiconductor material Aug. 16, 2005
6924202 Heterojunction bipolar transistor with self-aligned emitter and sidewall base contact Aug. 2, 2005
6828649 Semiconductor device having an interconnect that electrically connects a conductive material and a doped layer, and a method of manufacture therefor Dec. 7, 2004
6815304 Silicon carbide bipolar junction transistor with overgrown base region Nov. 9, 2004
6808999 Method of making a bipolar transistor having a reduced base transit time Oct. 26, 2004
6797580 Method for fabricating a bipolar transistor in a BiCMOS process and related structure Sep. 28, 2004
6753234 Method of forming the silicon germanium base of a bipolar transistor Jun. 22, 2004
6686250 Method of forming self-aligned bipolar transistor Feb. 3, 2004
6674146 Composite dielectric layers Jan. 6, 2004
6635545 Method for fabricating a bipolar transistor and method for fabricating an integrated circuit configuration having such a bipolar transistor Oct. 21, 2003
6597053 Integrated circuit arrangement with a number of structural elements and method for the production thereof Jul. 22, 2003
6579774 Semiconductor device fabrication method Jun. 17, 2003
6573147 Method of forming a semiconductor device having contact using crack-protecting layer Jun. 3, 2003
6506655 Bipolar transistor manufacturing method Jan. 14, 2003
6492219 High voltage shield Dec. 10, 2002
6482710 Bipolar transistor and manufacting method thereof Nov. 19, 2002
6432789 Method of forming a well isolation bipolar transistor Aug. 13, 2002
6429085 Self-aligned non-selective thin-epi-base silicon germaniun (SiGe) heterojunction bipolar transistor BiCMOS process using silicon dioxide etchback Aug. 6, 2002
6337251 Method of manufacturing semiconductor device with no parasitic barrier Jan. 8, 2002
6291304 Method of fabricating a high voltage transistor using P+ buried layer Sep. 18, 2001
6258686 Manufacturing method of semiconductor device and semiconductor device Jul. 10, 2001
6235601 Method of manufacturing a self-aligned vertical bipolar transistor May. 22, 2001
6184102 Method for manufacturing a well isolation bipolar transistor Feb. 6, 2001
6169007 Self-aligned non-selective thin-epi-base silicon germanium (SiGe) heterojunction bipolar transistor BicMOS process using silicon dioxide etchback Jan. 2, 2001
6165828 Structure and method for gated lateral bipolar transistors Dec. 26, 2000
6156616 Method for fabricating an NPN transistor in a BICMOS technology Dec. 5, 2000
6153488 Method for producing semiconductor device, and semiconductor device produced by same Nov. 28, 2000
6103578 Method for forming high breakdown semiconductor device Aug. 15, 2000
5940711 Method for making high-frequency bipolar transistor Aug. 17, 1999
5933715 Process for manufacturing discrete electronic devices Aug. 3, 1999
5909623 Manufacturing method of semiconductor device Jun. 1, 1999

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