Forming bipolar transistor by formation or alteration of semiconductive active regions > Emitter dip prevention or utilization > Patents

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Class Information
Number: 438/346
Name: Semiconductor device manufacturing: process > Forming bipolar transistor by formation or alteration of semiconductive active regions > Emitter dip prevention or utilization
Description: Process involving special diffusion techniques to eliminate or utilize the tendency of the base-collector junction to "bulge" downward during the emitter diffusion.

Patents under this class:

Patent Number	Title Of Patent	Date Issued
6773978	Methods for improved metal gate fabrication	Aug. 10, 2004
6616786	Process for applying an ink-only label to a polymeric surface	Sep. 9, 2003
6420238	Method of fabricating high-capacitance capacitive elements in a semiconductor substrate	Jul. 16, 2002
4778772	Method of manufacturing a bipolar transistor	Oct. 18, 1988
4667218	NPN transistor with base double doped with arsenic and boron	May. 19, 1987
4263067	Fabrication of transistors having specifically paired dopants	Apr. 21, 1981
4226650	Method of reducing emitter dip in transistors utilizing specifically paired dopants	Oct. 7, 1980
4006046	Method for compensating for emitter-push effect in the fabrication of transistors	Feb. 1, 1977