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Class Information
Number: 438/345
Name: Semiconductor device manufacturing: process > Forming bipolar transistor by formation or alteration of semiconductive active regions > Walled emitter
Description: Process for making a bipolar transistor wherein the emitter-base junction terminates against a dielectric isolation sidewall.
Patents under this class:
| Patent Number |
Title Of Patent |
Date Issued |
| 7618871 |
Method for the production of a bipolar transistor comprising an improved base terminal |
Nov. 17, 2009 |
| 7544577 |
Mobility enhancement in SiGe heterojunction bipolar transistors |
Jun. 9, 2009 |
| 7541249 |
Process for producing a base connection of a bipolar transistor |
Jun. 2, 2009 |
| 7491617 |
Transistor structure with minimized parasitics and method of fabricating the same |
Feb. 17, 2009 |
| 7338848 |
Method for opto-electronic integration on a SOI substrate and related structure |
Mar. 4, 2008 |
| 7339254 |
SOI substrate for integration of opto-electronics with SiGe BiCMOS |
Mar. 4, 2008 |
| 7279769 |
Semiconductor device and manufacturing method thereof |
Oct. 9, 2007 |
| 7118982 |
Emitter and method of making |
Oct. 10, 2006 |
| 7087925 |
Semiconductor device having reduced capacitance to substrate and method |
Aug. 8, 2006 |
| 7042701 |
High-voltage CMOS-compatible capacitors |
May. 9, 2006 |
| 6930010 |
Method of forming a conductive structure in a semiconductor material |
Aug. 16, 2005 |
| 6815801 |
Vertical bipolar transistor and a method of manufacture therefor including two epitaxial layers and a buried layer |
Nov. 9, 2004 |
| 6784065 |
Bipolar transistor with ultra small self-aligned polysilicon emitter and method of forming the transistor |
Aug. 31, 2004 |
| 6686250 |
Method of forming self-aligned bipolar transistor |
Feb. 3, 2004 |
| 6656812 |
Vertical bipolar transistor having little low-frequency noise and high current gain, and corresponding fabrication process |
Dec. 2, 2003 |
| 6531369 |
Heterojunction bipolar transistor (HBT) fabrication using a selectively deposited silicon germanium (SiGe) |
Mar. 11, 2003 |
| 6506655 |
Bipolar transistor manufacturing method |
Jan. 14, 2003 |
| 6461926 |
Circuit and method for a memory cell using reverse base current effect |
Oct. 8, 2002 |
| 6444536 |
Method for fabricating bipolar transistors |
Sep. 3, 2002 |
| 6440810 |
Method in the fabrication of a silicon bipolar transistor |
Aug. 27, 2002 |
| 6432789 |
Method of forming a well isolation bipolar transistor |
Aug. 13, 2002 |
| 6362065 |
Blocking of boron diffusion through the emitter-emitter poly interface in PNP HBTs through use of a SiC layer at the top of the emitter epi layer |
Mar. 26, 2002 |
| 6319743 |
Method of making thin film piezoresistive sensor |
Nov. 20, 2001 |
| 6306695 |
Modified source side inserted anti-type diffusion ESD protection device |
Oct. 23, 2001 |
| 6277701 |
Circuit and method for a memory cell using reverse base current effect |
Aug. 21, 2001 |
| 6184102 |
Method for manufacturing a well isolation bipolar transistor |
Feb. 6, 2001 |
| 6180442 |
Bipolar transistor with an inhomogeneous emitter in a BICMOS integrated circuit method |
Jan. 30, 2001 |
| 6156594 |
Fabrication of bipolar/CMOS integrated circuits and of a capacitor |
Dec. 5, 2000 |
| 6153488 |
Method for producing semiconductor device, and semiconductor device produced by same |
Nov. 28, 2000 |
| 5928964 |
System and method for anisotropic etching of silicon nitride |
Jul. 27, 1999 |
| 5899723 |
Oblique implantation in forming base of bipolar transistor |
May. 4, 1999 |
| 5846868 |
Method for forming a walled-emitter transistor |
Dec. 8, 1998 |
| 5786222 |
Method of manufacturing high performance bipolar transistors in a BiCMOS process |
Jul. 28, 1998 |
| 5733791 |
Methods for fabrication of bipolar device having high ratio of emitter to base area |
Mar. 31, 1998 |
| 5605849 |
Use of oblique implantation in forming base of bipolar transistor |
Feb. 25, 1997 |
| 5554543 |
Process for fabricating bipolar junction transistor having reduced parasitic capacitance |
Sep. 10, 1996 |
| 5482874 |
Inversion implant isolation process |
Jan. 9, 1996 |
| 5399509 |
Method of manufacturing a bipolar transistor |
Mar. 21, 1995 |
| 5389552 |
Transistors having bases with different shape top surfaces |
Feb. 14, 1995 |
| 5338695 |
Making walled emitter bipolar transistor with reduced base narrowing |
Aug. 16, 1994 |
| 5318917 |
Method of fabricating semiconductor device |
Jun. 7, 1994 |
| 5316957 |
Method of forming a recessed contact bipolar transistor |
May. 31, 1994 |
| 5306649 |
Method for producing a fully walled emitter-base structure in a bipolar transistor |
Apr. 26, 1994 |
| 5258317 |
Method for using a field implant mask to correct low doping levels at the outside edges of the base in a walled-emitter transistor structure |
Nov. 2, 1993 |
| 5130262 |
Internal current limit and overvoltage protection method |
Jul. 14, 1992 |
| 5008210 |
Process of making a bipolar transistor with a trench-isolated emitter |
Apr. 16, 1991 |
| 4927774 |
Self aligned bipolar fabrication process |
May. 22, 1990 |
| 4883772 |
Process for making a self-aligned silicide shunt |
Nov. 28, 1989 |
| 4859630 |
Method of manufacturing a semiconductor device |
Aug. 22, 1989 |
| 4749661 |
Vertical slot bottom bipolar transistor structure |
Jun. 7, 1988 |
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