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Class Information
Number: 438/345
Name: Semiconductor device manufacturing: process > Forming bipolar transistor by formation or alteration of semiconductive active regions > Walled emitter
Description: Process for making a bipolar transistor wherein the emitter-base junction terminates against a dielectric isolation sidewall.










Patents under this class:
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Patent Number Title Of Patent Date Issued
8258545 Integrated circuit including a bipolar transistor and methods of making the same Sep. 4, 2012
8133791 Method of manufacturing a bipolar transistor and bipolar transistor obtained therewith Mar. 13, 2012
7980876 Lock for mobile communication equipment Jul. 19, 2011
7618871 Method for the production of a bipolar transistor comprising an improved base terminal Nov. 17, 2009
7544577 Mobility enhancement in SiGe heterojunction bipolar transistors Jun. 9, 2009
7541249 Process for producing a base connection of a bipolar transistor Jun. 2, 2009
7491617 Transistor structure with minimized parasitics and method of fabricating the same Feb. 17, 2009
7338848 Method for opto-electronic integration on a SOI substrate and related structure Mar. 4, 2008
7339254 SOI substrate for integration of opto-electronics with SiGe BiCMOS Mar. 4, 2008
7279769 Semiconductor device and manufacturing method thereof Oct. 9, 2007
7118982 Emitter and method of making Oct. 10, 2006
7087925 Semiconductor device having reduced capacitance to substrate and method Aug. 8, 2006
7042701 High-voltage CMOS-compatible capacitors May. 9, 2006
6930010 Method of forming a conductive structure in a semiconductor material Aug. 16, 2005
6815801 Vertical bipolar transistor and a method of manufacture therefor including two epitaxial layers and a buried layer Nov. 9, 2004
6784065 Bipolar transistor with ultra small self-aligned polysilicon emitter and method of forming the transistor Aug. 31, 2004
6686250 Method of forming self-aligned bipolar transistor Feb. 3, 2004
6656812 Vertical bipolar transistor having little low-frequency noise and high current gain, and corresponding fabrication process Dec. 2, 2003
6531369 Heterojunction bipolar transistor (HBT) fabrication using a selectively deposited silicon germanium (SiGe) Mar. 11, 2003
6506655 Bipolar transistor manufacturing method Jan. 14, 2003
6461926 Circuit and method for a memory cell using reverse base current effect Oct. 8, 2002
6444536 Method for fabricating bipolar transistors Sep. 3, 2002
6440810 Method in the fabrication of a silicon bipolar transistor Aug. 27, 2002
6432789 Method of forming a well isolation bipolar transistor Aug. 13, 2002
6362065 Blocking of boron diffusion through the emitter-emitter poly interface in PNP HBTs through use of a SiC layer at the top of the emitter epi layer Mar. 26, 2002
6319743 Method of making thin film piezoresistive sensor Nov. 20, 2001
6306695 Modified source side inserted anti-type diffusion ESD protection device Oct. 23, 2001
6277701 Circuit and method for a memory cell using reverse base current effect Aug. 21, 2001
6184102 Method for manufacturing a well isolation bipolar transistor Feb. 6, 2001
6180442 Bipolar transistor with an inhomogeneous emitter in a BICMOS integrated circuit method Jan. 30, 2001
6156594 Fabrication of bipolar/CMOS integrated circuits and of a capacitor Dec. 5, 2000
6153488 Method for producing semiconductor device, and semiconductor device produced by same Nov. 28, 2000
5928964 System and method for anisotropic etching of silicon nitride Jul. 27, 1999
5899723 Oblique implantation in forming base of bipolar transistor May. 4, 1999
5846868 Method for forming a walled-emitter transistor Dec. 8, 1998
5786222 Method of manufacturing high performance bipolar transistors in a BiCMOS process Jul. 28, 1998
5733791 Methods for fabrication of bipolar device having high ratio of emitter to base area Mar. 31, 1998
5605849 Use of oblique implantation in forming base of bipolar transistor Feb. 25, 1997
5554543 Process for fabricating bipolar junction transistor having reduced parasitic capacitance Sep. 10, 1996
5482874 Inversion implant isolation process Jan. 9, 1996
5399509 Method of manufacturing a bipolar transistor Mar. 21, 1995
5389552 Transistors having bases with different shape top surfaces Feb. 14, 1995
5338695 Making walled emitter bipolar transistor with reduced base narrowing Aug. 16, 1994
5318917 Method of fabricating semiconductor device Jun. 7, 1994
5316957 Method of forming a recessed contact bipolar transistor May. 31, 1994
5306649 Method for producing a fully walled emitter-base structure in a bipolar transistor Apr. 26, 1994
5258317 Method for using a field implant mask to correct low doping levels at the outside edges of the base in a walled-emitter transistor structure Nov. 2, 1993
5130262 Internal current limit and overvoltage protection method Jul. 14, 1992
5008210 Process of making a bipolar transistor with a trench-isolated emitter Apr. 16, 1991
4927774 Self aligned bipolar fabrication process May. 22, 1990

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