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Class Information
Number: 438/344
Name: Semiconductor device manufacturing: process > Forming bipolar transistor by formation or alteration of semiconductive active regions > Washed emitter
Description: Process wherein the surface of the semiconductive substrate is etched to remove oxide layers formed on the emitter region during emitter diffusion thus allowing an aperature used for diffusing the emitter impurity to be directly utilized as the aperature for electrical contact formation.
Patents under this class:
| Patent Number |
Title Of Patent |
Date Issued |
| 8097518 |
Semiconductor device and manufacturing method therefor |
Jan. 17, 2012 |
| 7544577 |
Mobility enhancement in SiGe heterojunction bipolar transistors |
Jun. 9, 2009 |
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Semiconductor device that includes a silicide region that is not in contact with the lightly doped region |
May. 29, 2007 |
| 7042701 |
High-voltage CMOS-compatible capacitors |
May. 9, 2006 |
| 6431455 |
Contactless data carrier |
Aug. 13, 2002 |
| 6399452 |
Method of fabricating transistors with low thermal budget |
Jun. 4, 2002 |
| 6362065 |
Blocking of boron diffusion through the emitter-emitter poly interface in PNP HBTs through use of a SiC layer at the top of the emitter epi layer |
Mar. 26, 2002 |
| 6180442 |
Bipolar transistor with an inhomogeneous emitter in a BICMOS integrated circuit method |
Jan. 30, 2001 |
| 6156594 |
Fabrication of bipolar/CMOS integrated circuits and of a capacitor |
Dec. 5, 2000 |
| 6153488 |
Method for producing semiconductor device, and semiconductor device produced by same |
Nov. 28, 2000 |
| 5250447 |
Semiconductor device and method of manufacturing the same |
Oct. 5, 1993 |
| 4486946 |
Method for using titanium-tungsten alloy as a barrier metal in silicon semiconductor processing |
Dec. 11, 1984 |
| 4052253 |
Semiconductor-oxide etchant |
Oct. 4, 1977 |
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