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Class Information
Number: 438/344
Name: Semiconductor device manufacturing: process > Forming bipolar transistor by formation or alteration of semiconductive active regions > Washed emitter
Description: Process wherein the surface of the semiconductive substrate is etched to remove oxide layers formed on the emitter region during emitter diffusion thus allowing an aperature used for diffusing the emitter impurity to be directly utilized as the aperature for electrical contact formation.










Patents under this class:

Patent Number Title Of Patent Date Issued
8097518 Semiconductor device and manufacturing method therefor Jan. 17, 2012
7544577 Mobility enhancement in SiGe heterojunction bipolar transistors Jun. 9, 2009
7223666 Semiconductor device that includes a silicide region that is not in contact with the lightly doped region May. 29, 2007
7042701 High-voltage CMOS-compatible capacitors May. 9, 2006
6431455 Contactless data carrier Aug. 13, 2002
6399452 Method of fabricating transistors with low thermal budget Jun. 4, 2002
6362065 Blocking of boron diffusion through the emitter-emitter poly interface in PNP HBTs through use of a SiC layer at the top of the emitter epi layer Mar. 26, 2002
6180442 Bipolar transistor with an inhomogeneous emitter in a BICMOS integrated circuit method Jan. 30, 2001
6156594 Fabrication of bipolar/CMOS integrated circuits and of a capacitor Dec. 5, 2000
6153488 Method for producing semiconductor device, and semiconductor device produced by same Nov. 28, 2000
5250447 Semiconductor device and method of manufacturing the same Oct. 5, 1993
4486946 Method for using titanium-tungsten alloy as a barrier metal in silicon semiconductor processing Dec. 11, 1984
4052253 Semiconductor-oxide etchant Oct. 4, 1977











 
 
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