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Class Information
Number: 438/342
Name: Semiconductor device manufacturing: process > Forming bipolar transistor by formation or alteration of semiconductive active regions > Having multiple emitter or collector structure
Description: Process for making a bipolar transistor having plural emitter active regions or plural collector active regions.










Patents under this class:
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Patent Number Title Of Patent Date Issued
8652919 Tunable semiconductor device Feb. 18, 2014
8546229 Methods for fabricating bipolar transistors with improved gain Oct. 1, 2013
8486797 Bipolar junction transistor with epitaxial contacts Jul. 16, 2013
8293614 High performance LDMOS device having enhanced dielectric strain layer Oct. 23, 2012
8294244 Semiconductor device having an enlarged emitter electrode Oct. 23, 2012
8263469 Methods of forming a bipolar transistor Sep. 11, 2012
8216863 Method for producing a field-emitter array with controlled apex sharpness Jul. 10, 2012
8216910 Group III-V compound semiconductor based heterojunction bipolar transistors with various collector profiles on a common wafer Jul. 10, 2012
8120147 Current-confined heterojunction bipolar transistor Feb. 21, 2012
8084706 System and method for laser processing at non-constant velocities Dec. 27, 2011
8071410 Multi spectral sensor Dec. 6, 2011
RE42955 GaN-based permeable base transistor and method of fabrication Nov. 22, 2011
8058704 Bipolar transistor Nov. 15, 2011
7951681 Substrate-triggered bipolar junction transistor and ESD protection circuit May. 31, 2011
7807539 Ion implantation and process sequence to form smaller base pick-up Oct. 5, 2010
7795103 Bipolar transistors with depleted emitter Sep. 14, 2010
7777255 Bipolar transistor with raised base connection region and process for the production thereof Aug. 17, 2010
7728408 Verticle BJT, manufacturing method thereof Jun. 1, 2010
7605047 Method for the integration of two bipolar transistors in a semiconductor body, semiconductor arrangement in a semiconductor body, and cascode circuit Oct. 20, 2009
7538004 Method of fabrication for SiGe heterojunction bipolar transistor (HBT) May. 26, 2009
7495312 Method for producing vertical bipolar transistors and integrated circuit Feb. 24, 2009
7485537 Method of fabricating a vertical bipolar transistor with a majority carrier accumulation layer as a subcollector for SOI BiCMOS with reduced buried oxide thickness Feb. 3, 2009
7456071 Method for forming a strongly-conductive buried layer in a semiconductor substrate Nov. 25, 2008
7413958 GaN-based permeable base transistor and method of fabrication Aug. 19, 2008
7192838 Method of producing complementary SiGe bipolar transistors Mar. 20, 2007
7176099 Hetero-junction bipolar transistor and manufacturing method thereof Feb. 13, 2007
7098113 Method and system for providing a power lateral PNP transistor using a buried power buss Aug. 29, 2006
7060583 Method for manufacturing a bipolar transistor having a polysilicon emitter Jun. 13, 2006
7037799 Breakdown voltage adjustment for bipolar transistors May. 2, 2006
6893932 Heterojunction bipolar transistor containing at least one silicon carbide layer May. 17, 2005
6891230 Bipolar ESD protection structure May. 10, 2005
6838348 Integrated process for high voltage and high performance silicon-on-insulator bipolar devices Jan. 4, 2005
6787427 Method to fabricate SiGe HBTs with controlled current gain and improved breakdown voltage characteristics Sep. 7, 2004
6784064 Heterojunction bipolar transistor and method of making heterojunction bipolar transistor Aug. 31, 2004
6759303 Complementary vertical bipolar junction transistors fabricated of silicon-on-sapphire utilizing wide base PNP transistors Jul. 6, 2004
6743691 Semiconductor device and method for fabricating the same Jun. 1, 2004
6720625 Bipolar ESD protection structure Apr. 13, 2004
6709941 Method for manufacturing semiconductor device employing solid phase diffusion Mar. 23, 2004
6682981 Stress controlled dielectric integrated circuit fabrication Jan. 27, 2004
6673703 Method of fabricating an integrated circuit Jan. 6, 2004
6664609 High frequency differential amplification circuit with reduced parasitic capacitance Dec. 16, 2003
6563145 Methods and apparatus for a composite collector double heterojunction bipolar transistor May. 13, 2003
6559023 Method of fabricating a semiconductor device with phosphorous and boron ion implantation, and by annealing to control impurity concentration thereof May. 6, 2003
6544830 Method of manufacturing a semiconductor device with multiple emitter contact plugs Apr. 8, 2003
6524921 Methods of forming bipolar transistor constructions Feb. 25, 2003
6503809 Method and system for emitter partitioning for SiGe RF power transistors Jan. 7, 2003
6472286 Bipolar ESD protection structure Oct. 29, 2002
6423603 Method of forming a microwave array transistor for low-noise and high-power applications Jul. 23, 2002
6236072 Method and system for emitter partitioning for SiGe RF power transistors May. 22, 2001
6228732 Tunnel nitride for improved polysilicon emitter May. 8, 2001

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