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Class Information
Number: 438/341
Name: Semiconductor device manufacturing: process > Forming bipolar transistor by formation or alteration of semiconductive active regions > Using epitaxial lateral overgrowth
Description: Process for making a bipolar transistor including forming a single crystalline semiconductor layer epitaxially on the semiconductor substrate and laterally over an insulative layer thereupon.










Patents under this class:
1 2 3 4

Patent Number Title Of Patent Date Issued
8685825 Replacement source/drain finFET fabrication Apr. 1, 2014
8673748 Method for fabricating semiconductor thin film using substrate irradiated with focused light, apparatus for fabricating semiconductor thin film using substrate irradiated with focused light, m Mar. 18, 2014
8652918 Nitride semiconductor structure Feb. 18, 2014
8643097 Trench-gate metal oxide semiconductor device and fabricating method thereof Feb. 4, 2014
8603883 Interface control in a bipolar junction transistor Dec. 10, 2013
8603886 Intermediate epitaxial structure and method for fabricating an epitaxial structure Dec. 10, 2013
8574982 Implementing eDRAM stacked FET structure Nov. 5, 2013
8557674 High voltage semiconductor device including field shaping layer and method of fabricating the same Oct. 15, 2013
8541292 Group III nitride semiconductor epitaxial substrate and method for manufacturing the same Sep. 24, 2013
8492220 Vertically stacked FETs with series bipolar junction transistor Jul. 23, 2013
8455946 Lateral stack-type super junction power semiconductor device Jun. 4, 2013
8455322 Silicon germanium heterojunction bipolar transistor structure and method Jun. 4, 2013
8431966 Method of manufacturing a bipolar transistor semiconductor device and semiconductor devices obtained thereby Apr. 30, 2013
8420543 Method for treating the dislocation in a GaN-containing semiconductor layer Apr. 16, 2013
8399340 Method of manufacturing super-junction semiconductor device Mar. 19, 2013
8343841 Method for fabricating a semiconductor device Jan. 1, 2013
8294213 Semiconductor photodiode device and manufacturing method thereof Oct. 23, 2012
8097517 Method for manufacturing semiconductor device with improved short channel effect of a PMOS and stabilized current of a NMOS Jan. 17, 2012
8035196 Methods of counter-doping collector regions in bipolar transistors Oct. 11, 2011
8017489 Field effect structure including carbon alloyed channel region and source/drain region not carbon alloyed Sep. 13, 2011
7972971 Method for producing Si.sub.1-yGe.sub.y based zones with different contents in Ge on a same substrate by condensation of germanium Jul. 5, 2011
7968384 Stacked transistors and process Jun. 28, 2011
7960222 System and method for manufacturing double EPI N-type lateral diffusion metal oxide semiconductor transistors Jun. 14, 2011
7919381 Germanium substrate-type materials and approach therefor Apr. 5, 2011
7902557 Semiconductor light emitting device and a method of manufacturing the same Mar. 8, 2011
7888225 Method of manufacturing an electronic device including a PNP bipolar transistor Feb. 15, 2011
7883954 Self-aligned epitaxially grown bipolar transistor Feb. 8, 2011
7875522 Silicon compatible integrated light communicator Jan. 25, 2011
7838376 Non-destructive inline epi pattern shift monitor using selective epi Nov. 23, 2010
7824977 Completely decoupled high voltage and low voltage transistor manufacturing processes Nov. 2, 2010
7824978 Bipolar transistor with high dynamic performances Nov. 2, 2010
7781295 System and method for providing a single deposition emitter/base in a bipolar junction transistor Aug. 24, 2010
7772078 Germanium substrate-type materials and approach therefor Aug. 10, 2010
7732306 Methods for producing improved epitaxial materials Jun. 8, 2010
7696034 Methods of base formation in a BiCOMS process Apr. 13, 2010
7687825 Insulated gate bipolar conduction transistors (IBCTS) and related methods of fabrication Mar. 30, 2010
7648893 Method for manufacturing a semiconductor-on-insulator substrate for microelectronics and optoelectronics Jan. 19, 2010
7615457 Method of fabricating self-aligned bipolar transistor having tapered collector Nov. 10, 2009
7582536 Electronic device with reduced interface charge between epitaxially grown layers and a method for making the same Sep. 1, 2009
7579230 High voltage BICMOS device and method for manufacturing the same Aug. 25, 2009
7566919 Method to reduce seedlayer topography in BICMOS process Jul. 28, 2009
7563684 Process for manufacturing an array of cells including selection bipolar junction transistors Jul. 21, 2009
7560364 Dislocation-specific lateral epitaxial overgrowth to reduce dislocation density of nitride films Jul. 14, 2009
7557010 Method to improve writer leakage in a SiGe bipolar device Jul. 7, 2009
7531851 Electronic device with reduced interface charge between epitaxially grown layers and a method for making the same May. 12, 2009
7495313 Germanium substrate-type materials and approach therefor Feb. 24, 2009
7405098 Smooth surface liquid phase epitaxial germanium Jul. 29, 2008
7364976 Selective etch for patterning a semiconductor film deposited non-selectively Apr. 29, 2008
7291898 Selective and non-selective epitaxy for base integration in a BiCMOS process and related structure Nov. 6, 2007
7271023 Floating body germanium phototransistor Sep. 18, 2007

1 2 3 4










 
 
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