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Class Information
Number: 438/339
Name: Semiconductor device manufacturing: process > Forming bipolar transistor by formation or alteration of semiconductive active regions > Forming lateral transistor structure > Self-aligned
Description: Process for making a lateral bipolar transistor wherein a previously formed device feature is utilized to make device active regions in the desired registration to the previously formed feature.

Patents under this class:
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Patent Number Title Of Patent Date Issued
8133791 Method of manufacturing a bipolar transistor and bipolar transistor obtained therewith Mar. 13, 2012
7955939 Method for producing a high capacitance cathode by annealing a metallic foil in a nitrogen environment Jun. 7, 2011
7936006 Semiconductor device with backfilled isolation May. 3, 2011
7615455 Integrated circuit bipolar transistor Nov. 10, 2009
7598536 Semiconductor device having load resistor and method of fabricating the same Oct. 6, 2009
7521313 Thin film device active matrix by pattern reversal process Apr. 21, 2009
7446012 Lateral PNP transistor and the method of manufacturing the same Nov. 4, 2008
7297607 Device and method of performing a seasoning process for a semiconductor device manufacturing apparatus Nov. 20, 2007
7282418 Method for fabricating a self-aligned bipolar transistor without spacers Oct. 16, 2007
6972472 Quasi self-aligned single polysilicon bipolar active device with intentional emitter window undercut Dec. 6, 2005
6844225 Self-aligned mask formed utilizing differential oxidation rates of materials Jan. 18, 2005
6815801 Vertical bipolar transistor and a method of manufacture therefor including two epitaxial layers and a buried layer Nov. 9, 2004
6809353 Method for fabricating a self-aligned bipolar transistor with planarizing layer and related structure Oct. 26, 2004
6764893 Method for reducing a parasitic capacitance of a semiconductive memory cell using metal mask for sidewall formation Jul. 20, 2004
6713361 Method of manufacturing a bipolar junction transistor including undercutting regions adjacent to the emitter region to enlarge the emitter region Mar. 30, 2004
6699741 Single poly bipolar transistor and method that uses a selectively epitaxially grown highly-boron-doped silicon layer as a diffusion source for an extrinsic base region Mar. 2, 2004
6686250 Method of forming self-aligned bipolar transistor Feb. 3, 2004
6656810 Semiconductor device capable of reducing dispersion in electrical characteristics and operating at high speed and method for fabricating the same Dec. 2, 2003
6611044 Lateral bipolar transistor and method of making same Aug. 26, 2003
6436779 Semiconductor device having a plurality of resistive paths Aug. 20, 2002
6359307 Method for forming self-aligned contacts and interconnection lines using dual damascene techniques Mar. 19, 2002
6255184 Fabrication process for a three dimensional trench emitter bipolar transistor Jul. 3, 2001
6204161 Self aligned contact pad in a semiconductor device and method for forming the same Mar. 20, 2001
6124217 In-situ SiON deposition/bake/TEOS deposition process for reduction of defects in interlevel dielectric for integrated circuit interconnects Sep. 26, 2000
6114743 Well isolation bipolar transistor Sep. 5, 2000
5846858 SOI-BiCMOS method Dec. 8, 1998
5789285 Manufacturing method for BIMOS Aug. 4, 1998
5666001 Transistor wherein the base area is covered with an insulating layer which is overlaid with a conductive film that might be polysilicon crystal or aluminum Sep. 9, 1997
5624856 Method for forming a lateral bipolar transistor Apr. 29, 1997
5610087 Method for fabricating narrow base width lateral bipolar junction transistor, on SOI layer Mar. 11, 1997
5571731 Procedure for the manufacture of bipolar transistors without epitaxy and with fully implanted base and collector regions which are self-positioning relative to each other Nov. 5, 1996
5567631 Method of forming gate spacer to control the base width of a lateral bipolar junction transistor using SOI technology Oct. 22, 1996
5486481 Method for forming a lateral bipolar transistor Jan. 23, 1996
5455188 Process for fabricating a lateral bipolar junction transistor Oct. 3, 1995
5449627 Lateral bipolar transistor and FET compatible process for making it Sep. 12, 1995
5444004 CMOS process compatible self-alignment lateral bipolar junction transistor Aug. 22, 1995
5416031 Method of producing Bi-CMOS transistors May. 16, 1995
5407843 Method for manufacturing lateral bipolar transistors Apr. 18, 1995
5395775 Method for manufacturing lateral bipolar transistors Mar. 7, 1995
5387553 Method for forming a lateral bipolar transistor with dual collector, circular symmetry and composite structure Feb. 7, 1995
5376565 Fabrication of lateral bipolar transistor Dec. 27, 1994
5374568 Method for forming a base link in a bipolar transistor Dec. 20, 1994
5360750 Method of fabricating lateral bipolar transistors Nov. 1, 1994
5358883 Lateral bipolar transistor Oct. 25, 1994
5326710 Process for fabricating lateral PNP transistor structure and BICMOS IC Jul. 5, 1994
5298440 Method of fabrication of transistor device with increased breakdown voltage Mar. 29, 1994
5290716 Method of manufacturing semiconductor devices Mar. 1, 1994
5281544 Method of manufacturing planar type polar transistors and combination bipolar/MIS type transistors Jan. 25, 1994
5198375 Method for forming a bipolar transistor structure Mar. 30, 1993
5187109 Lateral bipolar transistor and method of making the same Feb. 16, 1993

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