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Class Information
Number: 438/337
Name: Semiconductor device manufacturing: process > Forming bipolar transistor by formation or alteration of semiconductive active regions > Forming lateral transistor structure > Active region formed along groove or exposed edge in semiconductor
Description: Process for making a lateral bipolar transistor wherein the transistor has a recess or exposed edge and an active region of the transistor is formed along the recess or exposed edge.










Patents under this class:
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Patent Number Title Of Patent Date Issued
8415224 Method of fabricating a semiconductor device including forming trenches having particular structures Apr. 9, 2013
8333005 Method of constructing a tunable RF filter Dec. 18, 2012
8183120 Method of making bipolar FinFET technology May. 22, 2012
8043924 Methods of forming phase-change memory units, and methods of manufacturing phase-change memory devices using the same Oct. 25, 2011
8039898 Process for manufacturing a charge-balance power diode and an edge-termination structure for a charge-balance semiconductor power device Oct. 18, 2011
7943993 Structure and method for forming field effect transistor with low resistance channel region May. 17, 2011
7640647 Method of assembling a packaged high frequency circuit module Jan. 5, 2010
7622357 Semiconductor device structures with backside contacts for improved heat dissipation and reduced parasitic resistance Nov. 24, 2009
7615391 Solar cell and method of fabricating the same Nov. 10, 2009
7615455 Integrated circuit bipolar transistor Nov. 10, 2009
7563698 Method for manufacturing semiconductor device Jul. 21, 2009
7494887 Method and apparatus for fabricating heterojunction bipolar transistors with simultaneous low base resistance and short base transit time Feb. 24, 2009
7151035 Semiconductor device and manufacturing method thereof Dec. 19, 2006
7118982 Emitter and method of making Oct. 10, 2006
7087925 Semiconductor device having reduced capacitance to substrate and method Aug. 8, 2006
6894362 Method and apparatus for a self-aligned heterojunction bipolar transistor using dielectric assisted metal liftoff process May. 17, 2005
6787404 Method of forming double-gated silicon-on-insulator (SOI) transistors with reduced gate to source-drain overlap capacitance Sep. 7, 2004
6656810 Semiconductor device capable of reducing dispersion in electrical characteristics and operating at high speed and method for fabricating the same Dec. 2, 2003
6436780 Semiconductor device Aug. 20, 2002
6368946 Manufacture of a semiconductor device with an epitaxial semiconductor zone Apr. 9, 2002
6346485 Semiconductor wafer processing method and semiconductor wafers produced by the same Feb. 12, 2002
6340612 Method of fabricating body contacted and backgated transistors Jan. 22, 2002
6337251 Method of manufacturing semiconductor device with no parasitic barrier Jan. 8, 2002
6255184 Fabrication process for a three dimensional trench emitter bipolar transistor Jul. 3, 2001
6248639 Electrostatic discharge protection circuit and transistor Jun. 19, 2001
6245615 Method and apparatus on (110) surfaces of silicon structures with conduction in the <110> direction Jun. 12, 2001
6136701 Contact structure for semiconductor device and the manufacturing method thereof Oct. 24, 2000
6110799 Trench contact process Aug. 29, 2000
RE36777 Integration of high performance submicron CMOS and dual-poly non-volatile memory devices using a third polysilicon layer Jul. 11, 2000
5786258 Method of making an SOI transistor Jul. 28, 1998
5580797 Method of making SOI Transistor Dec. 3, 1996
5455188 Process for fabricating a lateral bipolar junction transistor Oct. 3, 1995
5449627 Lateral bipolar transistor and FET compatible process for making it Sep. 12, 1995
5371022 Method of forming a novel vertical-gate CMOS compatible lateral bipolar transistor Dec. 6, 1994
5352624 SOI type semiconductor device and manufacturing method therefor Oct. 4, 1994
5273913 High performance lateral PNP transistor with buried base contact Dec. 28, 1993
5234845 Method of manufacturing semiconductor IC using selective poly and EPI silicon growth Aug. 10, 1993
5198376 Method of forming high performance lateral PNP transistor with buried base contact Mar. 30, 1993
5065210 Lateral transistor structure for bipolar semiconductor integrated circuits Nov. 12, 1991
5061645 Method of manufacturing a bipolar transistor Oct. 29, 1991
5047823 Circuit structure having a lateral bipolar transistor and its method of manufacture Sep. 10, 1991
5019525 Method for forming a horizontal self-aligned transistor May. 28, 1991
4965217 Method of making a lateral transistor Oct. 23, 1990
4743565 Lateral device structures using self-aligned fabrication techniques May. 10, 1988
4704786 Method of forming a lateral bipolar transistor in a groove Nov. 10, 1987
4648173 Fabrication of stud-defined integrated circuit structure Mar. 10, 1987
4611387 Process for producing NPN type lateral transistors Sep. 16, 1986
4584762 Lateral transistor separated from substrate by intersecting slots filled with substrate oxide for minimal interference therefrom and method for producing same Apr. 29, 1986
4580331 PNP-type lateral transistor with minimal substrate operation interference and method for producing same Apr. 8, 1986
4546536 Fabrication methods for high performance lateral bipolar transistors Oct. 15, 1985

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