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Class Information
Number: 438/325
Name: Semiconductor device manufacturing: process > Forming bipolar transistor by formation or alteration of semiconductive active regions > Complementary bipolar transistors > Having common active region (i.e., integrated injection logic (i2l), etc.) > Having lateral bipolar transistor
Description: Process for making complementary bipolar transistors with shared common region wherein at least one of the bipolar transistors has a horizontal structure resulting in current flow between its emitter and collector parallel to a major surface of the semiconductor substrate.










Patents under this class:
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Patent Number Title Of Patent Date Issued
8431450 Methods and apparatus for LDMOS transistors Apr. 30, 2013
8252655 Method of forming semiconductor cell structure, method of forming semiconductor device including the semiconductor cell structure, and method of forming semiconductor module including the semi Aug. 28, 2012
8173510 Lateral drain-extended MOSFET having channel along sidewall of drain extension dielectric May. 8, 2012
8148228 Surface patterned topography feature suitable for planarization Apr. 3, 2012
7888732 Lateral drain-extended MOSFET having channel along sidewall of drain extension dielectric Feb. 15, 2011
7456069 Method in the fabrication of an integrated injection logic circuit Nov. 25, 2008
7192838 Method of producing complementary SiGe bipolar transistors Mar. 20, 2007
7098113 Method and system for providing a power lateral PNP transistor using a buried power buss Aug. 29, 2006
7084485 Method of manufacturing a semiconductor component, and semiconductor component formed thereby Aug. 1, 2006
7061031 High-sensitivity image sensor and fabrication method thereof Jun. 13, 2006
7026221 Method of forming semiconductor device with bipolar transistor having lateral structure Apr. 11, 2006
6972237 Lateral heterojunction bipolar transistor and method of manufacture using selective epitaxial growth Dec. 6, 2005
6919615 Semiconductor device for integrated injection logic cell and process for fabricating the same Jul. 19, 2005
6911715 Bipolar transistors and methods of manufacturing the same Jun. 28, 2005
6861325 Methods for fabricating CMOS-compatible lateral bipolar junction transistors Mar. 1, 2005
6835628 Integrated circuit with a MOS capacitor Dec. 28, 2004
6803259 Silicon controlled rectifier for sige process, manufacturing method thereof and integrated circuit including the same Oct. 12, 2004
6790722 Logic SOI structure, process and application for vertical bipolar transistor Sep. 14, 2004
6784065 Bipolar transistor with ultra small self-aligned polysilicon emitter and method of forming the transistor Aug. 31, 2004
6782526 Photomask designing method, a photomask designing apparatus, a computer readable storage medium, a photomask, a photoresist, photosensitive resin, a base plate, a microlens, and an optical ele Aug. 24, 2004
6767842 Implementation of Si-Ge HBT with CMOS process Jul. 27, 2004
6759262 Image sensor with pixel isolation system and manufacturing method therefor Jul. 6, 2004
6596600 Integrated injection logic semiconductor device and method of fabricating the same Jul. 22, 2003
6593628 Semiconductor device and method of manufacturing same Jul. 15, 2003
6573146 Methods of manufacturing complementary bipolar transistors Jun. 3, 2003
6551869 Lateral PNP and method of manufacture Apr. 22, 2003
6501152 Advanced lateral PNP by implant negation Dec. 31, 2002
6489211 Method of manufacturing a semiconductor component Dec. 3, 2002
6395610 Method of making bipolar transistor semiconductor device including graded, grown, high quality oxide layer May. 28, 2002
6232193 Method of forming isolated integrated injection logic gate May. 15, 2001
6162695 Field ring to improve the breakdown voltage for a high voltage bipolar device Dec. 19, 2000
6146956 PNP lateral bipolar electronic device and corresponding manufacturing process Nov. 14, 2000
6140194 Method relating to the manufacture of a semiconductor component Oct. 31, 2000
6051873 Semiconductor device including self-aligned base and emitter electrodes Apr. 18, 2000
5915186 Method of manufacturing heterojunction bipolar device having Si.sub.1-x Ge.sub.x base Jun. 22, 1999
5693543 Method of manufacturing a semiconductor IIL device with dielectric and diffusion isolation Dec. 2, 1997
5340754 Method for forming a transistor having a dynamic connection between a substrate and a channel region Aug. 23, 1994
5240865 Method of forming a thyristor on an SOI substrate Aug. 31, 1993
5166094 Method of fabricating a base-coupled transistor logic Nov. 24, 1992
5100810 Manufacturing method of semiconductor devices Mar. 31, 1992
5055417 Process for fabricating self-aligned high performance lateral action silicon-controlled rectifier and static random access memory cells Oct. 8, 1991
4824797 Self-aligned channel stop Apr. 25, 1989
4559696 Ion implantation to increase emitter energy gap in bipolar transistors Dec. 24, 1985
4546536 Fabrication methods for high performance lateral bipolar transistors Oct. 15, 1985
4539742 Semiconductor device and method for manufacturing the same Sep. 10, 1985
4512075 Method of making an integrated injection logic cell having self-aligned collector and base reduced resistance utilizing selective diffusion from polycrystalline regions Apr. 23, 1985
4507848 Control of substrate injection in lateral bipolar transistors Apr. 2, 1985
4475280 Method of making an integrated circuit incorporating low voltage and high voltage semiconductor devices Oct. 9, 1984
4446611 Method of making a saturation-limited bipolar transistor device May. 8, 1984
4435225 Method of forming self-aligned lateral bipolar transistor Mar. 6, 1984

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