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Class Information
Number: 438/322
Name: Semiconductor device manufacturing: process > Forming bipolar transistor by formation or alteration of semiconductive active regions > Complementary bipolar transistors
Description: Process for making plural bipolar transistors wherein the emitter and collector regions or a first bipolar transistor are of opposite conductivity type to the emitter and collector regions of a second bipolar transistor.

Sub-classes under this class:

Class Number Class Name Patents
438/323 Having common active region (i.e., integrated injection logic (i2l), etc.) 47
438/327 Having lateral bipolar transistor 58
438/326 Including additional electrical device 42

Patents under this class:
1 2 3 4

Patent Number Title Of Patent Date Issued
8664054 Method for forming semiconductor structure Mar. 4, 2014
8648427 Electronic device including an integrated circuit with transistors coupled to each other Feb. 11, 2014
8609509 Superior integrity of high-k metal gate stacks by forming STI regions after gate metals Dec. 17, 2013
8598678 Parasitic vertical PNP bipolar transistor and its fabrication method in BiCMOS process Dec. 3, 2013
8564116 Semiconductor device with reinforcement plate and method of forming same Oct. 22, 2013
8530979 Semiconductor package and method for manufacturing the same Sep. 10, 2013
8502347 Bipolar junction transistor with epitaxial contacts Aug. 6, 2013
RE44140 Bipolar method and structure having improved BVCEO/RCS trade-off made with depletable collector columns Apr. 9, 2013
8263469 Methods of forming a bipolar transistor Sep. 11, 2012
8247300 Control of dopant diffusion from buried layers in bipolar integrated circuits Aug. 21, 2012
8158451 Method for manufacturing a junction Apr. 17, 2012
8030167 Varied impurity profile region formation for varying breakdown voltage of devices Oct. 4, 2011
8030151 Configuration and fabrication of semiconductor structure having bipolar junction transistor in which non-monocrystalline semiconductor spacing portion controls base-link length Oct. 4, 2011
7972919 Vertical PNP transistor and method of making same Jul. 5, 2011
7968418 Apparatus and method for isolating integrated circuit components using deep trench isolation and shallow trench isolation Jun. 28, 2011
7863148 Method for integrating SiGe NPN and vertical PNP devices Jan. 4, 2011
7807579 Hydrogen ashing enhanced with water vapor and diluent gas Oct. 5, 2010
7763518 Ultra-thin SOI vertical bipolar transistors with an inversion collector on thin-buried oxide (BOX) for low substrate-bias operation and methods thereof Jul. 27, 2010
7719081 Semiconductor device and method of manufacturing the same May. 18, 2010
7659157 Dual metal gate finFETs with single or dual high-K gate dielectric Feb. 9, 2010
7601990 Method and apparatus for electrostatic discharge protection having a stable breakdown voltage and low snapback voltage Oct. 13, 2009
7541250 Method for forming a self-aligned twin well region with simplified processing Jun. 2, 2009
7462547 Method of fabricating a bipolar transistor having reduced collector-base capacitance Dec. 9, 2008
7459367 Method of forming a vertical P-N junction device Dec. 2, 2008
7442617 Method for manufacturing bipolar transistor Oct. 28, 2008
7419611 Processes and materials for step and flash imprint lithography Sep. 2, 2008
7396732 Formation of deep trench airgaps and related applications Jul. 8, 2008
7393731 Semiconductor device and method of manufacturing the same Jul. 1, 2008
7348250 Bipolar structure with two base-emitter junctions in the same circuit Mar. 25, 2008
7329584 Method for manufacturing bipolar transistor Feb. 12, 2008
7285469 Bipolar method and structure having improved BVCEO/RCS trade-off made with depletable collector columns Oct. 23, 2007
7282401 Method and apparatus for a self-aligned recessed access device (RAD) transistor gate Oct. 16, 2007
7279793 System and method for manufacturing semiconductor devices using an anti-reflective coating layer Oct. 9, 2007
7265010 High performance vertical PNP transistor method Sep. 4, 2007
7253480 Structure and fabrication method of electrostatic discharge protection circuit Aug. 7, 2007
7217628 High performance integrated vertical transistors and method of making the same May. 15, 2007
7190046 Bipolar transistor having reduced collector-base capacitance Mar. 13, 2007
7041563 Semiconductor device having a shallow trench isolation and method of fabricating the same May. 9, 2006
7033899 Method of making semiconductor devices Apr. 25, 2006
7001806 Semiconductor structure with increased breakdown voltage and method for producing the semiconductor structure Feb. 21, 2006
6987039 Forming lateral bipolar junction transistor in CMOS flow Jan. 17, 2006
6972237 Lateral heterojunction bipolar transistor and method of manufacture using selective epitaxial growth Dec. 6, 2005
6972472 Quasi self-aligned single polysilicon bipolar active device with intentional emitter window undercut Dec. 6, 2005
6962842 Method of removing a sacrificial emitter feature in a BICMOS process with a super self-aligned BJT Nov. 8, 2005
6933202 Method for integrating SiGe NPN and vertical PNP devices on a substrate and related structure Aug. 23, 2005
6930008 Method of fabricating a complementary bipolar junction transistor Aug. 16, 2005
6917061 AlGaAs or InGaP low turn-on voltage GaAs-based heterojunction bipolar transistor Jul. 12, 2005
6914308 Vertical PNP bipolar transistor Jul. 5, 2005
6855611 Fabrication method of an electrostatic discharge protection circuit with a low resistant current path Feb. 15, 2005
6838350 Triply implanted complementary bipolar transistors Jan. 4, 2005

1 2 3 4

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