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Class Information
Number: 438/313
Name: Semiconductor device manufacturing: process > Forming bipolar transistor by formation or alteration of semiconductive active regions > Having heterojunction > Complementary bipolar transistors
Description: Process for making a structure which comprises plural bipolar transistors wherein the emitter and collector regions of a first bipolar transistor are of opposite conductivity type to the emitter and collector regions of a second bipolar transistor.(i.e., both pnp and npn bipolar transistor structures), at least one of which possesses a heterojunction.










Patents under this class:
1 2 3

Patent Number Title Of Patent Date Issued
8703570 Methods of fabricating substrates Apr. 22, 2014
8648391 SiGe heterojunction bipolar transistor with an improved breakdown voltage-cutoff frequency product Feb. 11, 2014
8609489 Methods of forming memory; and methods of forming vertical structures Dec. 17, 2013
8603884 Methods of fabricating substrates Dec. 10, 2013
8598629 High-frequency device including high-frequency switching circuit Dec. 3, 2013
8492237 Methods of fabricating a bipolar junction transistor with a self-aligned emitter and base Jul. 23, 2013
8273634 Methods of fabricating substrates Sep. 25, 2012
8247302 Methods of fabricating substrates Aug. 21, 2012
8247300 Control of dopant diffusion from buried layers in bipolar integrated circuits Aug. 21, 2012
8173511 Method of manufacturing a semiconductor device and semiconductor device obtained with such a method May. 8, 2012
8133791 Method of manufacturing a bipolar transistor and bipolar transistor obtained therewith Mar. 13, 2012
8120122 Self-aligned masks using multi-temperature phase-change materials Feb. 21, 2012
8021951 Formation of longitudinal bipolar transistor with base region in trenches having emitter and collector regions disposed along portions of side surfaces of base region Sep. 20, 2011
7998807 Method for increasing the speed of a light emitting biopolar transistor device Aug. 16, 2011
7989921 Soi vertical bipolar power component Aug. 2, 2011
7972936 Method of fabrication of heterogeneous integrated circuits and devices thereof Jul. 5, 2011
7897441 Method of fabricating a CMOS image sensor Mar. 1, 2011
7892915 High performance SiGe:C HBT with phosphorous atomic layer doping Feb. 22, 2011
7846806 System and method for providing a self aligned silicon germanium (SiGe) heterojunction bipolar transistor using a mesa emitter-base architecture Dec. 7, 2010
7800143 Dynamic random access memory with an amplified capacitor Sep. 21, 2010
RE41477 Semiconductor device with a reduced mask count buried layer Aug. 10, 2010
7713829 Incorporation of carbon in silicon/silicon germanium epitaxial layer to enhance yield for Si-Ge bipolar technology May. 11, 2010
7709338 BiCMOS devices with a self-aligned emitter and methods of fabricating such BiCMOS devices May. 4, 2010
7667281 Method for hard mask CD trim Feb. 23, 2010
7659157 Dual metal gate finFETs with single or dual high-K gate dielectric Feb. 9, 2010
7638820 Contact method for thin silicon carbide epitaxial layer and semiconductor devices formed by those methods Dec. 29, 2009
7605027 Method of fabricating a bipolar transistor Oct. 20, 2009
7562327 Mask layout design improvement in gate width direction Jul. 14, 2009
7485537 Method of fabricating a vertical bipolar transistor with a majority carrier accumulation layer as a subcollector for SOI BiCMOS with reduced buried oxide thickness Feb. 3, 2009
7473610 Local collector implant structure for heterojunction bipolar transistors and method of forming the same Jan. 6, 2009
7422951 Method of fabricating self-aligned bipolar transistor Sep. 9, 2008
7390720 Local collector implant structure for heterojunction bipolar transistors and method of forming the same Jun. 24, 2008
7314791 Bipolar transistor for an integrated circuit having variable value emitter ballast resistors Jan. 1, 2008
7309905 Bipolar-based SCR for electrostatic discharge protection Dec. 18, 2007
7271046 Method of making a semiconductor device in which a bipolar transistor and a metal silicide layer are formed on a substrate Sep. 18, 2007
7271434 Capacitor with insulating nanostructure Sep. 18, 2007
7226844 Method of manufacturing a bipolar transistor with a single-crystal base contact Jun. 5, 2007
7192838 Method of producing complementary SiGe bipolar transistors Mar. 20, 2007
7166517 Semiconductor device and method of manufacture thereof Jan. 23, 2007
7144788 Method for manufacturing a transmitting optical sub-assembly with a thermo-electric cooler therein Dec. 5, 2006
7132344 Super self-aligned BJT with base shorted field plate and method of fabricating Nov. 7, 2006
7109567 Semiconductor device and method of manufacturing such device Sep. 19, 2006
7071536 Semiconductor device and manufacturing method thereof Jul. 4, 2006
7033899 Method of making semiconductor devices Apr. 25, 2006
7015085 Super self-aligned collector device for mono-and hetero bipolar junction transistors and method of making same Mar. 21, 2006
7008852 Discontinuous dielectric interface for bipolar transistors Mar. 7, 2006
7001806 Semiconductor structure with increased breakdown voltage and method for producing the semiconductor structure Feb. 21, 2006
6992338 CMOS transistor spacers formed in a BiCMOS process Jan. 31, 2006
6979577 Method and apparatus for manufacturing semiconductor device Dec. 27, 2005
6953728 Semiconductor device and method of manufacturing thereof Oct. 11, 2005

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