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Class Information
Number: 438/309
Name: Semiconductor device manufacturing: process > Forming bipolar transistor by formation or alteration of semiconductive active regions
Description:










Sub-classes under this class:

Class Number Class Name Patents
438/322 Complementary bipolar transistors 167
438/351 Direct application of electrical current 12
438/346 Emitter dip prevention or utilization 11
438/350 Forming base region of specified dopant concentration profile (e.g., inactive base region more heavily doped than active base region, etc.) 188
438/334 Forming inverted transistor structure 40
438/335 Forming lateral transistor structure 99
438/352 Fusion or solidification of semiconductor region 9
438/310 Gettering of semiconductor substrate 73
438/333 Having fuse or integral short 98
438/312 Having heterojunction 379
438/342 Having multiple emitter or collector structure 85
438/328 Including diode 227
438/353 Including isolation structure 142
438/329 Including passive device (e.g., resistor, capacitor, etc.) 183
438/340 Making plural bipolar transistors of differing electrical characteristics 115
438/343 Mesa or stacked emitter 125
438/311 On insulating substrate or layer (i.e., soi type) 442
438/349 Pedestal base 52
438/347 Permeable or metal base 37
438/378 Radiation or energy treatment modifying properties of semiconductor regions of substrate (e.g., thermal, corpuscular, electromagnetic, etc.) 140
438/364 Self-aligned 117
438/348 Sidewall base contact 95
438/341 Using epitaxial lateral overgrowth 155
438/345 Walled emitter 75
438/344 Washed emitter 13


Patents under this class:
1 2 3 4 5 6 7 8 9 10 11

Patent Number Title Of Patent Date Issued
8664698 Bipolar transistor and method with recessed base electrode Mar. 4, 2014
8652919 Tunable semiconductor device Feb. 18, 2014
8648391 SiGe heterojunction bipolar transistor with an improved breakdown voltage-cutoff frequency product Feb. 11, 2014
RE44730 Method of manufacturing a MOSFET structure Jan. 28, 2014
RE44720 Method of manufacturing a MOSFET structure Jan. 21, 2014
8610241 Homo-junction diode structures using fin field effect transistor processing Dec. 17, 2013
8603883 Interface control in a bipolar junction transistor Dec. 10, 2013
8598008 Stacked ESD clamp with reduced variation in clamp voltage Dec. 3, 2013
8586423 Silicon controlled rectifier with stress-enhanced adjustable trigger voltage Nov. 19, 2013
8585917 Etching, cleaning and drying methods using supercritical fluid and chamber systems using these methods Nov. 19, 2013
8581339 Structure of NPN-BJT for improving punch through between collector and emitter Nov. 12, 2013
8546229 Methods for fabricating bipolar transistors with improved gain Oct. 1, 2013
8530934 Integrated circuit structures containing a strain-compensated compound semiconductor layer and methods and systems related thereto Sep. 10, 2013
8502269 Semiconductor device Aug. 6, 2013
8501572 Spacer structure for transistor device and method of manufacturing same Aug. 6, 2013
8492256 Method of manufacturing semiconductor apparatus Jul. 23, 2013
8466019 Semiconductor device and bipolar-CMOS-DMOS Jun. 18, 2013
8466501 Asymmetric silicon-on-insulator (SOI) junction field effect transistor (JFET) and a method of forming the asymmetrical SOI JFET Jun. 18, 2013
8455269 Method for recovering an on-state forward voltage and, shrinking stacking faults in bipolar semiconductor devices, and the bipolar semiconductor devices Jun. 4, 2013
8455980 Schottky-clamped bipolar transistor with reduced self heating Jun. 4, 2013
8445352 Manufacturing method of semiconductor device May. 21, 2013
RE44140 Bipolar method and structure having improved BVCEO/RCS trade-off made with depletable collector columns Apr. 9, 2013
8409959 Vertically base-connected bipolar transistor Apr. 2, 2013
8389316 Strain bars in stressed layers of MOS devices Mar. 5, 2013
8389995 Epitaxial solid-state semiconducting heterostructures and method for making same Mar. 5, 2013
8384167 Semiconductor device with field effect transistor and manufacturing method thereof Feb. 26, 2013
8372723 Bipolar device having buried contacts Feb. 12, 2013
8368177 Integrated circuit with ESD structure Feb. 5, 2013
8367510 Process for producing silicon carbide semiconductor device Feb. 5, 2013
8343841 Method for fabricating a semiconductor device Jan. 1, 2013
8334179 Semiconductor device and method for its production Dec. 18, 2012
8324044 Method of producing a semiconductor device with an aluminum or aluminum alloy electrode Dec. 4, 2012
8309436 Method of producing epitaxial substrate with gettering for solid-state imaging device, and method of producing solid-state imaging device using same substrate Nov. 13, 2012
8298901 Method for manufacturing bipolar transistors Oct. 30, 2012
8283234 Memory including bipolar junction transistor select devices Oct. 9, 2012
8269253 Rare earth enhanced high electron mobility transistor and method for fabricating same Sep. 18, 2012
8247300 Control of dopant diffusion from buried layers in bipolar integrated circuits Aug. 21, 2012
8247287 Method of fabricating a deep trench insulated gate bipolar transistor Aug. 21, 2012
8242007 Semiconductor device formed using single polysilicon process and method of fabricating the same Aug. 14, 2012
8232156 Vertical heterojunction bipolar transistors with reduced base-collector junction capacitance Jul. 31, 2012
8216910 Group III-V compound semiconductor based heterojunction bipolar transistors with various collector profiles on a common wafer Jul. 10, 2012
8203173 Semiconductor integrated circuit Jun. 19, 2012
8158451 Method for manufacturing a junction Apr. 17, 2012
8143910 Semiconductor integrated circuit and method of testing the same Mar. 27, 2012
8133791 Method of manufacturing a bipolar transistor and bipolar transistor obtained therewith Mar. 13, 2012
8133765 Integrated RF ESD protection for high frequency circuits Mar. 13, 2012
8129248 Method of producing bipolar transistor structures in a semiconductor process Mar. 6, 2012
8119475 Method of forming gate of semiconductor device Feb. 21, 2012
8110472 High power and high temperature semiconductor power devices protected by non-uniform ballasted sources Feb. 7, 2012
8093131 Lateral insulated gate bipolar transistor having a retrograde doping profile in base region and method of manufacture thereof Jan. 10, 2012

1 2 3 4 5 6 7 8 9 10 11










 
 
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