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Class Information
Number: 438/307
Name: Semiconductor device manufacturing: process > Making field effect device having pair of active regions separated by gate structure by formation or alteration of semiconductive active regions > Having insulated gate (e.g., igfet, misfet, mosfet, etc.) > Self-aligned > Source or drain doping > Plural doping steps > Using same conductivity-type dopant
Description: Process wherein the same conductivity-type electrically active dopant is introduced using plural doping steps.










Patents under this class:
1 2 3 4 5 6 7 8 9

Patent Number Title Of Patent Date Issued
8691635 Fabrication method of semiconductor device Apr. 8, 2014
8536011 Junction leakage suppression in memory devices Sep. 17, 2013
8530315 finFET with fully silicided gate Sep. 10, 2013
8501571 Method of manufacturing semiconductor device having silicon carbide layers containing phosphorus Aug. 6, 2013
8470677 Method of manufacturing semiconductor device Jun. 25, 2013
8431455 Method of improving memory cell device by ion implantation Apr. 30, 2013
8389369 Electronic device including a doped region disposed under and having a higher dopant concentration than a channel region and a process of forming the same Mar. 5, 2013
8377787 Alternating-doping profile for source/drain of a FET Feb. 19, 2013
8273631 Method of fabricating n-channel metal-oxide semiconductor transistor Sep. 25, 2012
8247279 Method of fabricating semiconductor device using epitaxial growth inhibiting layers Aug. 21, 2012
8241985 Semiconductor device having gate electrode with lower impurity concentration at edge portions than above channel and method of manufacturing the same Aug. 14, 2012
8217470 Field effect device including recessed and aligned germanium containing channel Jul. 10, 2012
8198154 Method of forming bottom-drain LDMOS power MOSFET structure having a top drain strap Jun. 12, 2012
8148219 Thick oxide P-gate NMOS capacitor for use in a low-pass filter of a circuit and method of making same Apr. 3, 2012
8143133 Technique for enhancing dopant profile and channel conductivity by millisecond anneal processes Mar. 27, 2012
8110462 Reduced finger end MOSFET breakdown voltage (BV) for electrostatic discharge (ESD) protection Feb. 7, 2012
8101489 Approach to reduce the contact resistance Jan. 24, 2012
8097517 Method for manufacturing semiconductor device with improved short channel effect of a PMOS and stabilized current of a NMOS Jan. 17, 2012
8076189 Method of forming a semiconductor device and semiconductor device Dec. 13, 2011
8008158 Dopant implantation method using multi-step implants Aug. 30, 2011
7998823 Method for reducing leakage currents caused by misalignment of a contact structure by increasing an error tolerance of the contact patterning process Aug. 16, 2011
7977715 LDMOS devices with improved architectures Jul. 12, 2011
7943468 Penetrating implant for forming a semiconductor device May. 17, 2011
7902032 Method for forming strained channel PMOS devices and integrated circuits therefrom Mar. 8, 2011
7888224 Method for forming a shallow junction region using defect engineering and laser annealing Feb. 15, 2011
7851329 Semiconductor device having EDMOS transistor and method for manufacturing the same Dec. 14, 2010
7820532 Methods for simultaneously forming doped regions having different conductivity-determining type element profiles Oct. 26, 2010
7767536 Semiconductor device and fabricating method thereof Aug. 3, 2010
7759210 Method for forming a MOS device with reduced transient enhanced diffusion Jul. 20, 2010
7736959 Integrated circuit device, and method of fabricating same Jun. 15, 2010
7709361 Method for manufacturing a semiconductor device May. 4, 2010
7645665 Semiconductor device having shallow b-doped region and its manufacture Jan. 12, 2010
7608873 Buried-gated photodiode device and method for configuring and operating same Oct. 27, 2009
7598160 Method for manufacturing thin film semiconductor Oct. 6, 2009
7566615 Methods of fabricating scalable two transistor memory devices Jul. 28, 2009
7547956 Thick oxide P-gate NMOS capacitor for use in a low-pass filter of a circuit and method of making same Jun. 16, 2009
7547606 Semiconductor device and method of manufacturing the same Jun. 16, 2009
7524715 Memory cell transistor having different source/drain junction profiles connected to DC node and BC node and manufacturing method thereof Apr. 28, 2009
7514307 Method of manufacturing a semiconductor apparatus Apr. 7, 2009
7501322 Methods of forming non-volatile memory devices having trenches Mar. 10, 2009
7485905 Electrostatic discharge protection device Feb. 3, 2009
7439563 High-breakdown-voltage semiconductor device Oct. 21, 2008
7402451 Optimized transistor for imager device Jul. 22, 2008
7399669 Semiconductor devices and methods for fabricating the same including forming an amorphous region in an interface between a device isolation layer and a source/drain diffusion layer Jul. 15, 2008
RE40138 Method for improving hot carrier lifetime via a nitrogen implantation procedure performed before or after a Teos liner deposition Mar. 4, 2008
7329583 Method of fabricating isolated semiconductor devices in epi-less substrate Feb. 12, 2008
7294551 Semiconductor device and method for manufacturing the same Nov. 13, 2007
7276431 Method of fabricating isolated semiconductor devices in epi-less substrate Oct. 2, 2007
7220646 Integrated circuit structure with improved LDMOS design May. 22, 2007
7211482 Method of forming a memory cell having self-aligned contact regions May. 1, 2007

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