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Class Information
Number: 438/306
Name: Semiconductor device manufacturing: process > Making field effect device having pair of active regions separated by gate structure by formation or alteration of semiconductive active regions > Having insulated gate (e.g., igfet, misfet, mosfet, etc.) > Self-aligned > Source or drain doping > Plural doping steps
Description: Process including multiple steps of introducing dopant species into the semiconductive regions of the substrate.

Sub-classes under this class:

Class Number Class Name Patents
438/307 Using same conductivity-type dopant 442

Patents under this class:
1 2 3 4 5 6 7 8 9 10 11 12 13

Patent Number Title Of Patent Date Issued
8709902 Sacrificial spacer approach for differential source/drain implantation spacers in transistors comprising a high-k metal gate electrode structure Apr. 29, 2014
8679930 Semiconductor structure and manufacturing method for the same Mar. 25, 2014
8679936 Manufacturing resistors with tightened resistivity distribution in semiconductor integrated circuits Mar. 25, 2014
8673720 Structure and fabrication of field-effect transistor having nitrided gate dielectric layer with tailored vertical nitrogen concentration profile Mar. 18, 2014
8669163 Tunnel field-effect transistors with superlattice channels Mar. 11, 2014
8658506 Method and apparatus for selectively improving integrated device performance Feb. 25, 2014
8637375 Method of manufacturing a tunnel transistor and IC comprising the same Jan. 28, 2014
8633083 Apparatus and method for a metal oxide semiconductor field effect transistor with source side punch-through protection implant Jan. 21, 2014
8580646 Method of fabricating field effect transistors with low k sidewall spacers Nov. 12, 2013
8574995 Source/drain doping method in 3D devices Nov. 5, 2013
8552470 Self-powered integrated circuit with multi-junction photovoltaic cell Oct. 8, 2013
8541847 Semiconductor device and method for fabricating the same Sep. 24, 2013
8518765 Aqua regia and hydrogen peroxide HCl combination to remove Ni and NiPt residues Aug. 27, 2013
8507351 Dopant profile tuning for MOS devices by adapting a spacer width prior to implantation Aug. 13, 2013
8501570 Method of manufacturing source/drain structures Aug. 6, 2013
8486795 Method of fabricating transistors Jul. 16, 2013
8466030 Semiconductor device and fabricating method thereof Jun. 18, 2013
8455299 Methods utilizing microwave radiation during formation of semiconductor constructions Jun. 4, 2013
8455340 Method of fabricating heavily doped region in double-diffused source MOSFET (LDMOS) transistor Jun. 4, 2013
8440530 Methods of forming highly scaled semiconductor devices using a disposable spacer technique May. 14, 2013
8431462 Methods of manufacturing semiconductor devices Apr. 30, 2013
8399953 Semiconductor device and method for manufacturing the same Mar. 19, 2013
8368151 Semiconductor device Feb. 5, 2013
8324062 Method for manufacturing a power semiconductor device Dec. 4, 2012
8310008 Electronic device including a gate electrode having portions with different conductivity types Nov. 13, 2012
8298898 Manufacturing method of semiconductor device with increased drain breakdown voltage Oct. 30, 2012
8298886 Electronic device including doped regions between channel and drain regions and a process of forming the same Oct. 30, 2012
8288235 Self-aligned body fully isolated device Oct. 16, 2012
8283203 Methods utilizing microwave radiation during formation of semiconductor constructions Oct. 9, 2012
8283231 finFET drive strength modification Oct. 9, 2012
8247279 Method of fabricating semiconductor device using epitaxial growth inhibiting layers Aug. 21, 2012
8247870 Power MOSFET integration Aug. 21, 2012
8236648 Trench MOS transistor and method of manufacturing the same Aug. 7, 2012
8236661 Self-aligned well implant for improving short channel effects control, parasitic capacitance, and junction leakage Aug. 7, 2012
8216906 Method of manufacturing integrated circuit device with well controlled surface proximity Jul. 10, 2012
8216908 Extended drain transistor and method of manufacturing the same Jul. 10, 2012
8216909 Field effect transistor with air gap dielectric Jul. 10, 2012
8217448 Semiconductor device and method of forming a semiconductor device Jul. 10, 2012
8198154 Method of forming bottom-drain LDMOS power MOSFET structure having a top drain strap Jun. 12, 2012
8193099 Protecting exposed metal gate structures from etching processes in integrated circuit manufacturing Jun. 5, 2012
8193064 Semiconductor device and method of manufacturing the same Jun. 5, 2012
8168489 High performance stress-enhanced MOSFETS using Si:C and SiGe epitaxial source/drain and method of manufacture May. 1, 2012
8168494 Trench MOS transistor and method of manufacturing the same May. 1, 2012
8119470 Mitigation of gate to contact capacitance in CMOS flow Feb. 21, 2012
8110468 DMOS-transistor having improved dielectric strength of drain and source voltages Feb. 7, 2012
8093114 Method for making split dual gate field effect transistor Jan. 10, 2012
8088666 Semiconductor device manufacture method including process of implanting impurity into gate electrode independently from source/drain and semiconductor device manufactured by the method Jan. 3, 2012
8058134 Junction profile engineering using staged thermal annealing Nov. 15, 2011
8053325 Body contact structures and methods of manufacturing the same Nov. 8, 2011
8048784 Methods of manufacturing semiconductor devices including a doped silicon layer Nov. 1, 2011

1 2 3 4 5 6 7 8 9 10 11 12 13

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