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Class Information
Number: 438/303
Name: Semiconductor device manufacturing: process > Making field effect device having pair of active regions separated by gate structure by formation or alteration of semiconductive active regions > Having insulated gate (e.g., igfet, misfet, mosfet, etc.) > Self-aligned > Source or drain doping > Utilizing gate sidewall structure
Description: Process having structure on the sidewall of the gate electrode or gate insulator which is utilized as the previously formed device feature.










Sub-classes under this class:

Class Number Class Name Patents
438/304 Conductive sidewall component 286
438/305 Plural doping steps 1,770


Patents under this class:

Patent Number Title Of Patent Date Issued
8710538 Light-emitting device with a spacer at bottom surface Apr. 29, 2014
8704229 Partial poly amorphization for channeling prevention Apr. 22, 2014
8703569 MOS transistor, manufacturing method thereof, and semiconductor device Apr. 22, 2014
8680602 Semiconductor device and method of manufacturing the same Mar. 25, 2014
8679908 Use of silicide block process to camouflage a false transistor Mar. 25, 2014
8673725 Multilayer sidewall spacer for seam protection of a patterned structure Mar. 18, 2014
8673724 Methods of fabricating semiconductor devices Mar. 18, 2014
8673707 Method for forming metal gate Mar. 18, 2014
8669156 Method of manufacturing semiconductor circuit device Mar. 11, 2014
8658506 Method and apparatus for selectively improving integrated device performance Feb. 25, 2014
8652917 Superior stability of characteristics of transistors having an early formed high-K metal gate Feb. 18, 2014
8652912 Methods of fabricating a transistor gate including cobalt silicide Feb. 18, 2014
8652892 Implant damage control by in-situ C doping during sige epitaxy for device applications Feb. 18, 2014
8643120 FinFET with fully silicided gate Feb. 4, 2014
8642428 Semiconductor device including line-type active region and method for manufacturing the same Feb. 4, 2014
8633096 Creating anisotropically diffused junctions in field effect transistor devices Jan. 21, 2014
8633075 Semiconductor device with high voltage transistor Jan. 21, 2014
8614133 Structure and method to enabling a borderless contact to source regions and drain regions of a complementary metal oxide semiconductor (CMOS) transistor Dec. 24, 2013
8609500 Semiconductor device production method Dec. 17, 2013
8603872 Field effect device provided with a localized dopant diffusion barrier area and fabrication method Dec. 10, 2013
8598007 Methods of performing highly tilted halo implantation processes on semiconductor devices Dec. 3, 2013
8598006 Strain preserving ion implantation methods Dec. 3, 2013
8592280 Fin field effect transistor devices with self-aligned source and drain regions Nov. 26, 2013
8587029 Semiconductor structure and method for forming the same Nov. 19, 2013
8586423 Silicon controlled rectifier with stress-enhanced adjustable trigger voltage Nov. 19, 2013
8580695 Method of fabricating a semiconductor device Nov. 12, 2013
8580660 Double and triple gate MOSFET devices and methods for making same Nov. 12, 2013
8580646 Method of fabricating field effect transistors with low k sidewall spacers Nov. 12, 2013
8574978 Method for forming semiconductor device Nov. 5, 2013
8569828 Nonvolatile semiconductor storage device and method of manufacture thereof Oct. 29, 2013
8563382 Semiconductor device Oct. 22, 2013
8563370 Method for fabricating surrounding-gate silicon nanowire transistor with air sidewalls Oct. 22, 2013
8557649 Method for controlling structure height Oct. 15, 2013
8551849 Semiconductor device and method of manufacturing the same Oct. 8, 2013
8551848 Field effect transistor with asymmetric abrupt junction implant Oct. 8, 2013
8551846 Methods for fabricating semiconductor devices Oct. 8, 2013
8541272 Method of manufacturing semiconductor device with offset sidewall structure Sep. 24, 2013
8535999 Stress memorization process improvement for improved technology performance Sep. 17, 2013
8530317 Corner rounding to improve metal fill in replacement gate process Sep. 10, 2013
8530315 finFET with fully silicided gate Sep. 10, 2013
8530294 Stress modulation for metal gate semiconductor device Sep. 10, 2013
8525238 Semiconductor device production method and semiconductor device Sep. 3, 2013
8518786 Process for forming a metal oxide semiconductor devices Aug. 27, 2013
8507351 Dopant profile tuning for MOS devices by adapting a spacer width prior to implantation Aug. 13, 2013
8502325 Metal high-K transistor having silicon sidewalls for reduced parasitic capacitance Aug. 6, 2013
8501571 Method of manufacturing semiconductor device having silicon carbide layers containing phosphorus Aug. 6, 2013
8492236 Step-like spacer profile Jul. 23, 2013
8487397 Method for forming self-aligned contact Jul. 16, 2013
8486778 Low resistance source and drain extensions for ETSOI Jul. 16, 2013
8481392 Methods of fabricating semiconductor device using high-K layer for spacer etch stop and related devices Jul. 9, 2013











 
 
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