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Class Information
Number: 438/302
Name: Semiconductor device manufacturing: process > Making field effect device having pair of active regions separated by gate structure by formation or alteration of semiconductive active regions > Having insulated gate (e.g., igfet, misfet, mosfet, etc.) > Self-aligned > Source or drain doping > Oblique implantation
Description: Process involving implanting ions other than perpendicularly with respect to the plane of the substrate.

Patents under this class:
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Patent Number Title Of Patent Date Issued
8703552 Method and structure for forming capacitors and memory devices on semiconductor-on-insulator (SOI) substrates Apr. 22, 2014
8679884 Methods for manufacturing semiconductor apparatus and CMOS image sensor Mar. 25, 2014
8669170 Methods of reducing gate leakage Mar. 11, 2014
8664072 Source and drain architecture in an active region of a P-channel transistor by tilted implantation Mar. 4, 2014
8658506 Method and apparatus for selectively improving integrated device performance Feb. 25, 2014
8652916 Self aligned impact-ionization MOS (I-MOS) device and methods of manufacture Feb. 18, 2014
8643107 Body-tied asymmetric N-type field effect transistor Feb. 4, 2014
8614134 Shallow source and drain architecture in an active region of a semiconductor device having a pronounced surface topography by tilted implantation Dec. 24, 2013
8598007 Methods of performing highly tilted halo implantation processes on semiconductor devices Dec. 3, 2013
8580646 Method of fabricating field effect transistors with low k sidewall spacers Nov. 12, 2013
8574989 Semiconductor structure having a polysilicon structure and method of forming same Nov. 5, 2013
8518782 Semiconductor device including asymmetric lightly doped drain (LDD) region, related method and design structure Aug. 27, 2013
8519403 Angled implantation for deep submicron device optimization Aug. 27, 2013
8519508 Semiconductor device having an anti-fuse element and a transistor with a pocket region Aug. 27, 2013
8497170 Semiconductor device manufacture method and semiconductor device Jul. 30, 2013
8492250 Method for fabricating semiconductor device Jul. 23, 2013
8476139 High performance MOSFET Jul. 2, 2013
8470677 Method of manufacturing semiconductor device Jun. 25, 2013
8450195 Method of reducing floating body effect of SOI MOS device via a large tilt ion implantation May. 28, 2013
8445342 Short channel semiconductor devices with reduced halo diffusion May. 21, 2013
8445384 High density six transistor FinFET SRAM cell layout May. 21, 2013
8445338 Semiconductor device and method for manufacturing the same May. 21, 2013
8440534 Threshold adjustment for MOS devices by adapting a spacer width prior to implantation May. 14, 2013
8420490 High-performance semiconductor device and method of manufacturing the same Apr. 16, 2013
8404546 Source/drain carbon implant and RTA anneal, pre-SiGe deposition Mar. 26, 2013
8399328 Transistor and method for forming the same Mar. 19, 2013
8395210 DMOS transistor and method of manufacturing the same Mar. 12, 2013
8377782 Method for fabricating a non-volatile memory device Feb. 19, 2013
8338316 Low temperature process for depositing a high extinction coefficient non-peeling optical absorber for a scanning laser surface anneal of implanted dopants Dec. 25, 2012
8324035 Manufacturing method of SOI MOS device eliminating floating body effects Dec. 4, 2012
8309445 Bi-directional self-aligned FET capacitor Nov. 13, 2012
8299540 High performance MOSFET Oct. 30, 2012
8298889 Process of forming an electronic device including a trench and a conductive structure therein Oct. 30, 2012
8278178 Nonvolatile memory device and method of manufacturing the same Oct. 2, 2012
8236633 Semiconductor device and method for manufacturing the same Aug. 7, 2012
8236648 Trench MOS transistor and method of manufacturing the same Aug. 7, 2012
8236661 Self-aligned well implant for improving short channel effects control, parasitic capacitance, and junction leakage Aug. 7, 2012
8211785 Fabrication method for semiconductor device including flash lamp annealing processes Jul. 3, 2012
8178414 NMOS architecture involving epitaxially-grown in-situ N-type-doped embedded eSiGe:C source/drain targeting May. 15, 2012
8168494 Trench MOS transistor and method of manufacturing the same May. 1, 2012
8163622 Method for angular doping of source and drain regions for odd and even NAND blocks Apr. 24, 2012
8159027 Semiconductor device Apr. 17, 2012
8138053 Method of forming source and drain of field-effect-transistor and structure thereof Mar. 20, 2012
8138547 MOSFET on silicon-on-insulator REDX with asymmetric source-drain contacts Mar. 20, 2012
8133785 Semiconductor device and method of manufacturing the same Mar. 13, 2012
8119487 Semiconductor device and method for fabricating the same Feb. 21, 2012
8110456 Method for making a self aligning memory device Feb. 7, 2012
8101528 Low temperature ion implantation Jan. 24, 2012
8093146 Method of fabricating gate electrode using a hard mask with spacers Jan. 10, 2012
8084330 Thin body semiconductor devices having improved contact resistance and methods for the fabrication thereof Dec. 27, 2011

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