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Class Information
Number: 438/299
Name: Semiconductor device manufacturing: process > Making field effect device having pair of active regions separated by gate structure by formation or alteration of semiconductive active regions > Having insulated gate (e.g., igfet, misfet, mosfet, etc.) > Self-aligned
Description: Process for making an insulated gate field effect transistor wherein a previously formed device feature is utilized to make device regions in the desired registration to the previously formed feature.










Sub-classes under this class:

Class Number Class Name Patents
438/300 Having elevated source or drain (e.g., epitaxially formed source or drain, etc.) 1,071
438/301 Source or drain doping 1,335


Patents under this class:
1 2 3 4 5 6 7 8 9 10 11 12 13 14 15

Patent Number Title Of Patent Date Issued
8709887 Method for fabricating a nitrided silicon-oxide gate dielectric Apr. 29, 2014
8703567 Method for manufacturing a semiconductor device Apr. 22, 2014
8691644 Method of forming a CMOS device with a stressed-channel NMOS transistor and a strained-channel PMOS transistor Apr. 8, 2014
8679902 Stacked nanowire field effect transistor Mar. 25, 2014
8680619 Method of fabricating hybrid impact-ionization semiconductor device Mar. 25, 2014
8673724 Methods of fabricating semiconductor devices Mar. 18, 2014
8669162 Semiconductor device and method of manufacturing the same Mar. 11, 2014
8664054 Method for forming semiconductor structure Mar. 4, 2014
8658505 Embedded stressors for multigate transistor devices Feb. 25, 2014
8659091 Embedded stressors for multigate transistor devices Feb. 25, 2014
8652916 Self aligned impact-ionization MOS (I-MOS) device and methods of manufacture Feb. 18, 2014
8652927 Integration of non-noble DRAM electrode Feb. 18, 2014
8653571 Semiconductor device Feb. 18, 2014
8642433 Method for manufacturing semiconductor device Feb. 4, 2014
8637374 Method of fabricating self-aligned nanotube field effect transistor Jan. 28, 2014
8637384 FinFET parasitic capacitance reduction using air gap Jan. 28, 2014
8633481 Semiconductor device and process for production thereof Jan. 21, 2014
8628989 Tri-gate field-effect transistors formed by aspect ration trapping Jan. 14, 2014
8629015 Manufacturing of electronic components Jan. 14, 2014
8629022 Asymmetric FET including sloped threshold voltage adjusting material layer and method of fabricating same Jan. 14, 2014
8623730 Method for fabricating silicon-on-insulator transistor with self-aligned borderless source/drain contacts Jan. 7, 2014
8624315 Field effect transistor having an asymmetric gate electrode Jan. 7, 2014
8614134 Shallow source and drain architecture in an active region of a semiconductor device having a pronounced surface topography by tilted implantation Dec. 24, 2013
8614131 Self-aligned static random access memory (SRAM) on metal gate Dec. 24, 2013
8609497 Method of dual EPI process for semiconductor device Dec. 17, 2013
8603872 Field effect device provided with a localized dopant diffusion barrier area and fabrication method Dec. 10, 2013
8592279 Electronic device including a tapered trench and a conductive structure therein and a process of forming the same Nov. 26, 2013
8580644 Multi-level lateral floating coupled capacitor transistor structures Nov. 12, 2013
8574989 Semiconductor structure having a polysilicon structure and method of forming same Nov. 5, 2013
8569798 Semicondcutor device comprising transistor Oct. 29, 2013
8563382 Semiconductor device Oct. 22, 2013
8551841 IO ESD device and methods for forming the same Oct. 8, 2013
8551846 Methods for fabricating semiconductor devices Oct. 8, 2013
8546227 Contact for high-K metal gate device Oct. 1, 2013
8541280 Semiconductor structure and method for manufacturing the same Sep. 24, 2013
8541272 Method of manufacturing semiconductor device with offset sidewall structure Sep. 24, 2013
8535999 Stress memorization process improvement for improved technology performance Sep. 17, 2013
8536001 Method for forming semiconductor device Sep. 17, 2013
8530303 Method of fabricating semiconductor device Sep. 10, 2013
8530317 Corner rounding to improve metal fill in replacement gate process Sep. 10, 2013
8518765 Aqua regia and hydrogen peroxide HCl combination to remove Ni and NiPt residues Aug. 27, 2013
8513082 Method for fabricating an electrostatic discharge protection device Aug. 20, 2013
8501571 Method of manufacturing semiconductor device having silicon carbide layers containing phosphorus Aug. 6, 2013
8497180 Transistor with boot shaped source/drain regions Jul. 30, 2013
8492213 Transistor and method for forming the same Jul. 23, 2013
8492228 Field effect transistor devices having thick gate dielectric layers and thin gate dielectric layers Jul. 23, 2013
8492846 Stress-generating shallow trench isolation structure having dual composition Jul. 23, 2013
8486840 Inverse spacer processing Jul. 16, 2013
8481392 Methods of fabricating semiconductor device using high-K layer for spacer etch stop and related devices Jul. 9, 2013
8466016 Hafnium tantalum oxynitride dielectric Jun. 18, 2013

1 2 3 4 5 6 7 8 9 10 11 12 13 14 15










 
 
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