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Class Information
Number: 438/297
Name: Semiconductor device manufacturing: process > Making field effect device having pair of active regions separated by gate structure by formation or alteration of semiconductive active regions > Having insulated gate (e.g., igfet, misfet, mosfet, etc.) > Including isolation structure > Recessed oxide formed by localized oxidation (i.e., locos)
Description: Process for making an insulated gate field effect transistor including the step of oxidizing a selected region of a semiconductive substrate to form an embedded oxide (e.g., field oxide) therein which forms the periphery of a semiconductive region utilized for the formation of the field effect transistor.
Sub-classes under this class:
Patents under this class:
| Patent Number |
Title Of Patent |
Date Issued |
| 7608515 |
Diffusion layer for stressed semiconductor devices |
Oct. 27, 2009 |
| 7601597 |
Manufacturing method of a super-junction semiconductor device |
Oct. 13, 2009 |
| 7577493 |
Temperature regulating method, thermal processing system and semiconductor device manufacturing method |
Aug. 18, 2009 |
| 7566482 |
SOI by oxidation of porous silicon |
Jul. 28, 2009 |
| 7564056 |
Method for manufacturing a semiconductor device |
Jul. 21, 2009 |
| 7550355 |
Low-leakage transistor and manufacturing method thereof |
Jun. 23, 2009 |
| 7544574 |
Methods for discretized processing of regions of a substrate |
Jun. 9, 2009 |
| 7521314 |
Method for selective removal of a layer |
Apr. 21, 2009 |
| 7514332 |
Semiconductor device and method for manufacturing the same |
Apr. 7, 2009 |
| 7510927 |
LOCOS isolation for fully-depleted SOI devices |
Mar. 31, 2009 |
| 7504309 |
Pre-silicide spacer removal |
Mar. 17, 2009 |
| 7488647 |
System and method for providing a poly cap and a no field oxide area to prevent formation of a vertical bird's beak structure in the manufacture of a semiconductor device |
Feb. 10, 2009 |
| 7482243 |
Ultra-thin Si channel MOSFET using a self-aligned oxygen implant and damascene technique |
Jan. 27, 2009 |
| 7476592 |
Method for manufacturing semiconductor device |
Jan. 13, 2009 |
| 7445979 |
Method of fabricating isolated semiconductor devices in epi-less substrate |
Nov. 4, 2008 |
| 7436030 |
Strained MOSFETs on separated silicon layers |
Oct. 14, 2008 |
| 7425475 |
Method for fabricating semiconductor device and semiconductor device |
Sep. 16, 2008 |
| 7384836 |
Integrated circuit transistor insulating region fabrication method |
Jun. 10, 2008 |
| 7374999 |
Semiconductor device |
May. 20, 2008 |
| 7371645 |
Method of manufacturing a field effect transistor device with recessed channel and corner gate device |
May. 13, 2008 |
| 7338873 |
Method of fabricating a field effect transistor structure with abrupt source/drain junctions |
Mar. 4, 2008 |
| 7338881 |
Method for manufacturing semiconductor element |
Mar. 4, 2008 |
| 7335549 |
Semiconductor device and method for fabricating the same |
Feb. 26, 2008 |
| 7332387 |
MOSFET structure and method of fabricating the same |
Feb. 19, 2008 |
| 7329599 |
Method for fabricating a semiconductor device |
Feb. 12, 2008 |
| 7316959 |
Semiconductor device and method for fabricating the same |
Jan. 8, 2008 |
| 7314792 |
Method for fabricating transistor of semiconductor device |
Jan. 1, 2008 |
| 7288828 |
Metal oxide semiconductor transistor device |
Oct. 30, 2007 |
| 7259055 |
Method of forming high-luminescence silicon electroluminescence device |
Aug. 21, 2007 |
| 7220647 |
Method of cleaning wafer and method of manufacturing gate structure |
May. 22, 2007 |
| 7144785 |
Method of forming isolation trench with spacer formation |
Dec. 5, 2006 |
| 7129138 |
Methods of implementing and enhanced silicon-on-insulator (SOI) box structures |
Oct. 31, 2006 |
| 7112482 |
Method of forming a field effect transistor |
Sep. 26, 2006 |
| 7091069 |
Ultra thin body fully-depleted SOI MOSFETs |
Aug. 15, 2006 |
| 7060579 |
Increased drive current by isotropic recess etch |
Jun. 13, 2006 |
| 7060574 |
Buried channel type transistor having a trench gate and method of manufacturing the same |
Jun. 13, 2006 |
| 7045468 |
Isolated junction structure and method of manufacture |
May. 16, 2006 |
| 7037792 |
Formation of removable shroud by anisotropic plasma etch |
May. 2, 2006 |
| 7026232 |
Systems and methods for low leakage strained-channel transistor |
Apr. 11, 2006 |
| 7008850 |
Method for manufacturing a semiconductor device |
Mar. 7, 2006 |
| 6977205 |
Method for manufacturing SOI LOCOS MOSFET with metal oxide film or impurity-implanted field oxide |
Dec. 20, 2005 |
| 6955957 |
Method of forming a floating gate in a flash memory device |
Oct. 18, 2005 |
| 6951785 |
Methods of forming field effect transistors including raised source/drain regions |
Oct. 4, 2005 |
| 6933207 |
Method of forming integrated circuitry |
Aug. 23, 2005 |
| 6924199 |
Method to form flash memory with very narrow polysilicon spacing |
Aug. 2, 2005 |
| 6921690 |
Method of fabricating enhanced EPROM structures with accentuated hot electron generation regions |
Jul. 26, 2005 |
| 6900101 |
LDMOS transistors and methods for making the same |
May. 31, 2005 |
| 6855602 |
Method for forming a box shaped polygate |
Feb. 15, 2005 |
| 6838326 |
Semiconductor device, and method for manufacturing the same |
Jan. 4, 2005 |
| RE38674 |
Process for forming a thin oxide layer |
Dec. 21, 2004 |
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