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Class Information
Number: 438/296
Name: Semiconductor device manufacturing: process > Making field effect device having pair of active regions separated by gate structure by formation or alteration of semiconductive active regions > Having insulated gate (e.g., igfet, misfet, mosfet, etc.) > Including isolation structure > Dielectric isolation formed by grooving and refilling with dielectric material
Description: Process for making an insulated gate field effect transistor including the step of forming an isolation structure by making a recess in the semiconductor substrate and refilling the recess with an insulative material.

Patents under this class:

Patent Number Title Of Patent Date Issued
7279381 Method for fabricating cell transistor of flash memory Oct. 9, 2007
7279377 Method and structure for shallow trench isolation during integrated circuit device manufacture Oct. 9, 2007
7279376 Method for manufacturing semiconductor device Oct. 9, 2007
7276426 Methods of forming semiconductor constructions Oct. 2, 2007
7276417 Hybrid STI stressor with selective re-oxidation anneal Oct. 2, 2007
7268048 Methods for elimination of arsenic based defects in semiconductor devices with isolation regions Sep. 11, 2007
7265014 Avoiding field oxide gouging in shallow trench isolation (STI) regions Sep. 4, 2007
7265012 Formation of standard voltage threshold and low voltage threshold MOSFET devices Sep. 4, 2007
7262141 Methods for cleaning a semiconductor substrate having a recess channel region Aug. 28, 2007
7262102 Reduction of field edge thinning in peripheral devices Aug. 28, 2007
7262097 Method for forming floating gate in flash memory device Aug. 28, 2007
7259098 Methods for fabricating semiconductor devices Aug. 21, 2007
7259079 Methods for filling high aspect ratio trenches in semiconductor layers Aug. 21, 2007
7259074 Trench isolation method in flash memory device Aug. 21, 2007
7259073 Semiconductor device and method of manufacturing the same Aug. 21, 2007
7256980 Thin film capacitors on ceramic Aug. 14, 2007
7256093 Method of forming a recessed buried-diffusion device Aug. 14, 2007
7253064 Cascode I/O driver with improved ESD operation Aug. 7, 2007
7253056 Flash memory cell and method for manufacturing the same Aug. 7, 2007
7250346 Dual gate oxide structure in semiconductor device and method thereof Jul. 31, 2007
7250335 Methods of fabricating integrated circuit devices including self-aligned contacts with increased alignment margin Jul. 31, 2007
7247534 Silicon device on Si:C-OI and SGOI and method of manufacture Jul. 24, 2007
7241662 Reduction of field edge thinning in peripheral devices Jul. 10, 2007
7238561 Method for forming uniaxially strained devices Jul. 3, 2007
7223650 Self-aligned gate isolation May. 29, 2007
7220645 Method of manufacturing semiconductor device May. 22, 2007
7217604 Structure and method for thin box SOI device May. 15, 2007
7214596 Method for the fabrication of isolation structures May. 8, 2007
7211498 Method of manufacturing an isolation layer of a flash memory May. 1, 2007
7211482 Method of forming a memory cell having self-aligned contact regions May. 1, 2007
7208373 Method of forming a memory cell array and a memory cell array Apr. 24, 2007
7199021 Methods and systems to mitigate etch stop clipping for shallow trench isolation fabrication Apr. 3, 2007
7199017 Methods of forming semiconductor circuitry Apr. 3, 2007
7196394 Method and apparatus for a deposited fill layer Mar. 27, 2007
7190042 Self-aligned STI for narrow trenches Mar. 13, 2007
7189622 Method for fabricating semiconductor device Mar. 13, 2007
7189605 Method for fabricating semiconductor device Mar. 13, 2007
7186622 Formation of active area using semiconductor growth process without STI integration Mar. 6, 2007
7183167 Semiconductor device having a trench isolation and method of fabricating the same Feb. 27, 2007
7183162 Method of forming non-volatile memory cell using sacrificial pillar spacers and non-volatile memory cell formed according to the method Feb. 27, 2007
7183161 Programming and erasing structure for a floating gate memory cell and method of making Feb. 27, 2007
7179711 Non-volatile semiconductor memory and method of making same, and semiconductor device and method of making device Feb. 20, 2007
7176105 Dielectric gap fill with oxide selectively deposited over silicon liner Feb. 13, 2007
7176104 Method for forming shallow trench isolation structure with deep oxide region Feb. 13, 2007
7172914 Method of making uniform oxide layer Feb. 6, 2007
7170176 Semiconductor device Jan. 30, 2007
7169654 Method of forming a semiconductor device Jan. 30, 2007
7166514 Semiconductor device and method of manufacturing the same Jan. 23, 2007
7163869 Shallow trench isolation structure with converted liner layer Jan. 16, 2007
7160782 Method of manufacture for a trench isolation structure having an implanted buffer layer Jan. 9, 2007

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