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Class Information
Number: 438/292
Name: Semiconductor device manufacturing: process > Making field effect device having pair of active regions separated by gate structure by formation or alteration of semiconductive active regions > Having insulated gate (e.g., igfet, misfet, mosfet, etc.) > Direct application of electrical current
Description: Process for making an insulated gate field effect transistor having a step of directly applying an electrical current to the semiconductor substrate.

Patents under this class:
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Patent Number Title Of Patent Date Issued
8617991 Method of manufacturing semiconductor device Dec. 31, 2013
8586439 Inversion mode varactor Nov. 19, 2013
8546215 Methods of fabricating a memory device Oct. 1, 2013
8535992 Thyristor random access memory device and method Sep. 17, 2013
8481385 Methods of fabricating a memory device Jul. 9, 2013
8389995 Epitaxial solid-state semiconducting heterostructures and method for making same Mar. 5, 2013
8247864 Amorphous silicon MONOS or MAS memory cell structure with OTP function Aug. 21, 2012
8222105 Methods of fabricating a memory device Jul. 17, 2012
8138074 ICs with end gates having adjacent electrically connected field poly Mar. 20, 2012
8120074 Bipolar semiconductor device and manufacturing method Feb. 21, 2012
8008693 Semiconductor thin film and method of manufacturing the same and semiconductor device and method of manufacturing the same Aug. 30, 2011
7968920 Semiconductor device and manufacturing method thereof Jun. 28, 2011
7923327 Method of fabricating non-volatile memory device with concavely depressed electron injection region Apr. 12, 2011
7919371 Method for fabricating non-volatile memory device with charge trapping layer Apr. 5, 2011
7892904 Amorphous silicon MONOS or MAS memory cell structure with OTP function Feb. 22, 2011
7843020 High withstand voltage transistor and manufacturing method thereof, and semiconductor device adopting high withstand voltage transistor Nov. 30, 2010
7749849 Methods of selectively oxidizing semiconductor structures, and structures resulting therefrom Jul. 6, 2010
7700417 Methods for forming cascode current mirrors Apr. 20, 2010
7691699 Transistor for semiconductor device and method of forming the same Apr. 6, 2010
7550354 Nanoelectromechanical transistors and methods of forming same Jun. 23, 2009
7374974 Thyristor-based device with trench dielectric material May. 20, 2008
7344947 Methods of performance improvement of HVMOS devices Mar. 18, 2008
7241920 Filterable surfactant composition Jul. 10, 2007
7112289 Etchants containing filterable surfactant Sep. 26, 2006
7091078 Selection of optimal quantization direction for given transport direction in a semiconductor device Aug. 15, 2006
7091096 Method of fabricating carbon nanotube field-effect transistors through controlled electrochemical modification Aug. 15, 2006
7056795 Thin-film transistor used as heating element for microreaction chamber Jun. 6, 2006
7030410 Resistance variable device Apr. 18, 2006
6969662 Semiconductor device Nov. 29, 2005
6833559 Non-volatile resistance variable device Dec. 21, 2004
6680227 Non-volatile memory device and fabrication method thereof Jan. 20, 2004
6680503 Field-effect transistor structure with an insulated gate Jan. 20, 2004
6620694 Method of making non volatile memory with a protective metal line Sep. 16, 2003
6514827 Method for fabricating a dual metal gate for a semiconductor device Feb. 4, 2003
6475879 Semiconductor wafer, method for processing the same and method for manufacturing semiconductor device Nov. 5, 2002
6417053 Fabrication method for a silicon nitride read-only memory Jul. 9, 2002
6306692 Coplanar type polysilicon thin film transistor and method of manufacturing the same Oct. 23, 2001
6143586 Electrostatic protected substrate Nov. 7, 2000
5833749 Compound semiconductor substrate and process of producing same Nov. 10, 1998
5798534 Manufacture of electronic devices comprising thin-film circuitry Aug. 25, 1998
5759898 Production of substrate for tensilely strained semiconductor Jun. 2, 1998
5643816 High-density programmable read-only memory and the process for its fabrication Jul. 1, 1997
5543344 Method of making programmable read-only memory Aug. 6, 1996
5391502 Per-wafer method for globally stressing gate oxide during device fabrication Feb. 21, 1995
5273927 Method of making a ferroelectric capacitor and forming local interconnect Dec. 28, 1993
5262350 Forming a non single crystal semiconductor layer by using an electric current Nov. 16, 1993
5219773 Method of making reoxidized nitrided oxide MOSFETs Jun. 15, 1993
5208177 Local field enhancement for better programmability of antifuse PROM May. 4, 1993
4874711 Method for altering characteristics of active semiconductor devices Oct. 17, 1989
4562639 Process for making avalanche fuse element with isolated emitter Jan. 7, 1986

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