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Class Information
Number: 438/291
Name: Semiconductor device manufacturing: process > Making field effect device having pair of active regions separated by gate structure by formation or alteration of semiconductive active regions > Having insulated gate (e.g., igfet, misfet, mosfet, etc.) > Doping of semiconductive channel region beneath gate insulator (e.g., adjusting threshold voltage, etc.) > Using channel conductivity dopant of opposite type as that of source and drain
Description: Process wherein the dopant and the semiconductor active channel region beneath the gate insulator are of the same conductivity type.
Patents under this class:
| Patent Number |
Title Of Patent |
Date Issued |
| 7598146 |
Self-aligned gate and method |
Oct. 6, 2009 |
| 7534708 |
Recessed-type field effect transistor with reduced body effect |
May. 19, 2009 |
| 7514318 |
Method for fabricating non-volatile memory cells |
Apr. 7, 2009 |
| 7504309 |
Pre-silicide spacer removal |
Mar. 17, 2009 |
| 7501325 |
Method for fabricating semiconductor device |
Mar. 10, 2009 |
| 7494872 |
Field effect transistor having a doped gate electrode with reduced gate depletion and method of forming the transistor |
Feb. 24, 2009 |
| 7491605 |
Zero cost non-volatile memory cell with write and erase features |
Feb. 17, 2009 |
| 7427546 |
Transistor device and method for manufacturing the same |
Sep. 23, 2008 |
| 7393767 |
Method for implanting a cell channel ion of semiconductor device |
Jul. 1, 2008 |
| 7381621 |
Methods of fabricating high voltage MOSFET having doped buried layer |
Jun. 3, 2008 |
| 7348243 |
Semiconductor device and method for fabricating the same |
Mar. 25, 2008 |
| 7344947 |
Methods of performance improvement of HVMOS devices |
Mar. 18, 2008 |
| 7288445 |
Double gated transistor and method of fabrication |
Oct. 30, 2007 |
| 7279388 |
Method for manufacturing transistor in semiconductor device |
Oct. 9, 2007 |
| 7259054 |
Method of manufacturing a semiconductor device that includes a process for forming a high breakdown voltage field effect transistor |
Aug. 21, 2007 |
| 7247541 |
Method of manufacturing a semiconductor memory device including a transistor |
Jul. 24, 2007 |
| 7217624 |
Non-volatile memory device with conductive sidewall spacer and method for fabricating the same |
May. 15, 2007 |
| 7208385 |
LDMOS transistor with enhanced termination region for high breakdown voltage with on-resistance |
Apr. 24, 2007 |
| 7195967 |
Nonvolatile semiconductor memory device and manufacturing method thereof |
Mar. 27, 2007 |
| 7192836 |
Method and system for providing halo implant to a semiconductor device with minimal impact to the junction capacitance |
Mar. 20, 2007 |
| 7179714 |
Method of fabricating MOS transistor having fully silicided gate |
Feb. 20, 2007 |
| 7176538 |
High voltage MOSFET having doped buried layer |
Feb. 13, 2007 |
| 7141477 |
Semiconductor device and method for fabricating the same |
Nov. 28, 2006 |
| 7091093 |
Method for fabricating a semiconductor device having a pocket dopant diffused layer |
Aug. 15, 2006 |
| 7081416 |
Methods of forming field effect transistor gates |
Jul. 25, 2006 |
| 7060572 |
MOSFET with short channel structure and formation method thereof |
Jun. 13, 2006 |
| 7053450 |
Semiconductor device and method for fabricating the same |
May. 30, 2006 |
| 7033894 |
Method for modulating flatband voltage of devices having high-k gate dielectrics by post-deposition annealing |
Apr. 25, 2006 |
| 7012006 |
Embedded ROM device using substrate leakage |
Mar. 14, 2006 |
| 7001816 |
Embedded ROM device using substrate leakage |
Feb. 21, 2006 |
| 6987049 |
Semiconductor transistors and methods of fabricating the same |
Jan. 17, 2006 |
| 6972234 |
High voltage MOS devices with high gated-diode breakdown voltage and punch-through voltage |
Dec. 6, 2005 |
| 6972236 |
Semiconductor device layout and channeling implant process |
Dec. 6, 2005 |
| 6951793 |
Low-temperature polysilicon thin film transistor having buried LDD structure and process for producing same |
Oct. 4, 2005 |
| 6936517 |
Method for fabricating transistor of semiconductor device |
Aug. 30, 2005 |
| 6930004 |
Self-aligned drain/channel junction in vertical pass transistor DRAM cell design for device scaling |
Aug. 16, 2005 |
| 6927137 |
Forming a retrograde well in a transistor to enhance performance of the transistor |
Aug. 9, 2005 |
| 6905932 |
Method for constructing a metal oxide semiconductor field effect transistor |
Jun. 14, 2005 |
| 6893921 |
Nonvolatile memories with a floating gate having an upward protrusion |
May. 17, 2005 |
| 6893928 |
Semiconductor device and method of manufacturing the same |
May. 17, 2005 |
| 6884686 |
Method of manufacturing and structure of semiconductor device with floating ring structure |
Apr. 26, 2005 |
| 6881634 |
Buried-channel transistor with reduced leakage current |
Apr. 19, 2005 |
| 6879007 |
Low volt/high volt transistor |
Apr. 12, 2005 |
| 6873008 |
Asymmetrical devices for short gate length performance with disposable sidewall |
Mar. 29, 2005 |
| 6852599 |
Method for fabricating MOS transistors |
Feb. 8, 2005 |
| 6838347 |
Method for reducing line edge roughness of oxide material using chemical oxide removal |
Jan. 4, 2005 |
| 6800511 |
Method for fabricating semiconductor device with negative differential conductance or transconductance |
Oct. 5, 2004 |
| 6790756 |
Self aligned channel implant, elevated S/D process by gate electrode damascene |
Sep. 14, 2004 |
| 6790754 |
Methods for manufacturing a semiconductor device |
Sep. 14, 2004 |
| 6780698 |
Semiconductor device and its production method |
Aug. 24, 2004 |
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