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Class Information
Number: 438/291
Name: Semiconductor device manufacturing: process > Making field effect device having pair of active regions separated by gate structure by formation or alteration of semiconductive active regions > Having insulated gate (e.g., igfet, misfet, mosfet, etc.) > Doping of semiconductive channel region beneath gate insulator (e.g., adjusting threshold voltage, etc.) > Using channel conductivity dopant of opposite type as that of source and drain
Description: Process wherein the dopant and the semiconductor active channel region beneath the gate insulator are of the same conductivity type.










Patents under this class:
1 2 3 4 5 6 7 8 9

Patent Number Title Of Patent Date Issued
8691653 Semiconductor structure with reduced surface field effect and manufacturing process thereof Apr. 8, 2014
8664067 CMOS devices with reduced short channel effects Mar. 4, 2014
8664715 Isolated transistor Mar. 4, 2014
8643100 Field effect transistor having multiple effective oxide thicknesses and corresponding multiple channel doping profiles Feb. 4, 2014
8633075 Semiconductor device with high voltage transistor Jan. 21, 2014
8609510 Replacement metal gate diffusion break formation Dec. 17, 2013
8574991 Asymmetric transistor devices formed by asymmetric spacers and tilted implantation Nov. 5, 2013
8476684 Field effect transistors having improved breakdown voltages and methods of forming the same Jul. 2, 2013
8421163 Power module Apr. 16, 2013
8389369 Electronic device including a doped region disposed under and having a higher dopant concentration than a channel region and a process of forming the same Mar. 5, 2013
8330232 Nonvolatile memory device and method of forming the same Dec. 11, 2012
8294217 Semiconductor device and method of manufacturing semiconductor device Oct. 23, 2012
8263466 Channel strain induced by strained metal in FET source or drain Sep. 11, 2012
8222657 Light emitting apparatus Jul. 17, 2012
8216903 SRAM cell with asymmetrical pass gate Jul. 10, 2012
8211773 SRAM cell with asymmetrical pass gate Jul. 3, 2012
8158482 Asymmetric transistor devices formed by asymmetric spacers and tilted implantation Apr. 17, 2012
8154077 Semiconductor device Apr. 10, 2012
8119507 Lateral double-diffused metal oxide semiconductor (LDMOS) transistors Feb. 21, 2012
8089124 Lateral DMOS device and method for fabricating the same Jan. 3, 2012
8067289 Semiconductor device and manufacturing method thereof Nov. 29, 2011
8058129 Lateral double diffused MOS device and method for manufacturing the same Nov. 15, 2011
8030166 Lateral pocket implant charge trapping devices Oct. 4, 2011
8012836 Semiconductor devices and methods for fabricating the same Sep. 6, 2011
8013381 Semiconductor device Sep. 6, 2011
7998849 Semiconductor device used as high-speed switching device and power device Aug. 16, 2011
7968400 Short channel LV, MV, and HV CMOS devices Jun. 28, 2011
7955919 Spacer-less transistor integration scheme for high-K gate dielectrics and small gate-to-gate spaces applicable to Si, SiGe and strained silicon schemes Jun. 7, 2011
7927987 Method of reducing channeling of ion implants using a sacrificial scattering layer Apr. 19, 2011
7923327 Method of fabricating non-volatile memory device with concavely depressed electron injection region Apr. 12, 2011
7843020 High withstand voltage transistor and manufacturing method thereof, and semiconductor device adopting high withstand voltage transistor Nov. 30, 2010
7829957 Semiconductor device and manufacturing method thereof Nov. 9, 2010
7821062 Field effect transistor and method for producing a field effect transistor Oct. 26, 2010
7745305 Method of removing an oxide and method of filling a trench using the same Jun. 29, 2010
7736984 Method of forming a low resistance semiconductor contact and structure therefor Jun. 15, 2010
7718498 Semiconductor device and method of producing same May. 18, 2010
7645650 Double gated transistor and method of fabrication Jan. 12, 2010
7645665 Semiconductor device having shallow b-doped region and its manufacture Jan. 12, 2010
7598146 Self-aligned gate and method Oct. 6, 2009
7534708 Recessed-type field effect transistor with reduced body effect May. 19, 2009
7514318 Method for fabricating non-volatile memory cells Apr. 7, 2009
7504309 Pre-silicide spacer removal Mar. 17, 2009
7501325 Method for fabricating semiconductor device Mar. 10, 2009
7494872 Field effect transistor having a doped gate electrode with reduced gate depletion and method of forming the transistor Feb. 24, 2009
7491605 Zero cost non-volatile memory cell with write and erase features Feb. 17, 2009
7427546 Transistor device and method for manufacturing the same Sep. 23, 2008
7393767 Method for implanting a cell channel ion of semiconductor device Jul. 1, 2008
7381621 Methods of fabricating high voltage MOSFET having doped buried layer Jun. 3, 2008
7348243 Semiconductor device and method for fabricating the same Mar. 25, 2008
7344947 Methods of performance improvement of HVMOS devices Mar. 18, 2008

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