 |
|
 |
| |
 |
|
Class Information
Number: 438/289
Name: Semiconductor device manufacturing: process > Making field effect device having pair of active regions separated by gate structure by formation or alteration of semiconductive active regions > Having insulated gate (e.g., igfet, misfet, mosfet, etc.) > Doping of semiconductive channel region beneath gate insulator (e.g., adjusting threshold voltage, etc.)
Description:
Sub-classes under this class:
Patents under this class:
| Patent Number |
Title Of Patent |
Date Issued |
| 7622351 |
Method of manufacturing semiconductor device and semiconductor device |
Nov. 24, 2009 |
| 7622353 |
Method for forming recessed gate structure with stepped profile |
Nov. 24, 2009 |
| 7618866 |
Structure and method to form multilayer embedded stressors |
Nov. 17, 2009 |
| 7615492 |
Preparing method of CNT-based semiconductor sensitized solar cell |
Nov. 10, 2009 |
| 7605041 |
Semiconductor device and its manufacture method |
Oct. 20, 2009 |
| 7601598 |
Reverse metal process for creating a metal silicide transistor gate structure |
Oct. 13, 2009 |
| 7598146 |
Self-aligned gate and method |
Oct. 6, 2009 |
| 7595243 |
Fabrication of semiconductor structure having N-channel channel-junction field-effect transistor |
Sep. 29, 2009 |
| 7588986 |
Method of manufacturing a semiconductor device |
Sep. 15, 2009 |
| 7582534 |
Chemical doping of nano-components |
Sep. 1, 2009 |
| 7569444 |
Transistor and method for manufacturing thereof |
Aug. 4, 2009 |
| 7569449 |
Processes providing high and low threshold p-type and n-type transistors |
Aug. 4, 2009 |
| 7566934 |
Semiconductor device to suppress leak current at an end of an isolation film |
Jul. 28, 2009 |
| 7563682 |
LDMOS transistor device, integrated circuit, and fabrication method thereof |
Jul. 21, 2009 |
| 7557023 |
Implantation of gate regions in semiconductor device fabrication |
Jul. 7, 2009 |
| 7550354 |
Nanoelectromechanical transistors and methods of forming same |
Jun. 23, 2009 |
| 7544595 |
Forming a semiconductor device having a metal electrode and structure thereof |
Jun. 9, 2009 |
| 7534688 |
Nonvolatile memory device with a non-planar gate-insulating layer and method of fabricating the same |
May. 19, 2009 |
| 7531404 |
Semiconductor device having a metal gate electrode formed on an annealed high-k gate dielectric layer |
May. 12, 2009 |
| 7524728 |
Thin film transistor manufacturing method and organic electroluminescent display device |
Apr. 28, 2009 |
| 7521305 |
Method for fabricating semiconductor device |
Apr. 21, 2009 |
| 7517760 |
Semiconductor device manufacturing method including three gate insulating films |
Apr. 14, 2009 |
| 7514332 |
Semiconductor device and method for manufacturing the same |
Apr. 7, 2009 |
| 7504327 |
Method of manufacturing thin film semiconductor device |
Mar. 17, 2009 |
| 7501324 |
Advanced CMOS using super steep retrograde wells |
Mar. 10, 2009 |
| 7491605 |
Zero cost non-volatile memory cell with write and erase features |
Feb. 17, 2009 |
| 7488657 |
Method and system for forming straight word lines in a flash memory array |
Feb. 10, 2009 |
| 7488653 |
Semiconductor device and method for implantation of doping agents in a channel |
Feb. 10, 2009 |
| 7482198 |
Method for producing through-contacts and a semiconductor component with through-contacts |
Jan. 27, 2009 |
| 7482220 |
Semiconductor device having deep trench charge compensation regions and method |
Jan. 27, 2009 |
| 7470593 |
Method for manufacturing a cell transistor of a semiconductor memory device |
Dec. 30, 2008 |
| 7465633 |
Methods of forming field effect transistors and capacitor-free dynamic random access memory cells |
Dec. 16, 2008 |
| 7462543 |
Flash memory cell transistor with threshold adjust implant and source-drain implant formed using a single mask |
Dec. 9, 2008 |
| 7446002 |
Method for making a semiconductor device comprising a superlattice dielectric interface layer |
Nov. 4, 2008 |
| 7442971 |
Self-biasing transistor structure and an SRAM cell having less than six transistors |
Oct. 28, 2008 |
| 7439140 |
Formation of standard voltage threshold and low voltage threshold MOSFET devices |
Oct. 21, 2008 |
| 7439165 |
Method of fabricating tensile strained layers and compressive strain layers for a CMOS device |
Oct. 21, 2008 |
| 7432164 |
Semiconductor device comprising a transistor having a counter-doped channel region and method for forming the same |
Oct. 7, 2008 |
| 7432160 |
Semiconductor devices including transistors having three dimensional channels and methods of fabricating the same |
Oct. 7, 2008 |
| 7432136 |
Transistors with controllable threshold voltages, and various methods of making and operating same |
Oct. 7, 2008 |
| 7422948 |
Threshold voltage adjustment for long channel transistors |
Sep. 9, 2008 |
| 7413946 |
Formation of standard voltage threshold and low voltage threshold MOSFET devices |
Aug. 19, 2008 |
| 7405129 |
Device comprising doped nano-component and method of forming the device |
Jul. 29, 2008 |
| 7402495 |
Method for manufacturing a semiconductor device |
Jul. 22, 2008 |
| 7399679 |
Narrow width effect improvement with photoresist plug process and STI corner ion implantation |
Jul. 15, 2008 |
| 7396775 |
Method for manufacturing semiconductor device |
Jul. 8, 2008 |
| 7393767 |
Method for implanting a cell channel ion of semiconductor device |
Jul. 1, 2008 |
| 7387908 |
CMOS imager with enhanced transfer of charge and low voltage operation and method of formation |
Jun. 17, 2008 |
| 7381621 |
Methods of fabricating high voltage MOSFET having doped buried layer |
Jun. 3, 2008 |
| 7368356 |
Transistor with doped gate dielectric |
May. 6, 2008 |
|
|
|
 |
|
 |
|
| |
Randomly Featured Patents |
|
