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Class Information
Number: 438/289
Name: Semiconductor device manufacturing: process > Making field effect device having pair of active regions separated by gate structure by formation or alteration of semiconductive active regions > Having insulated gate (e.g., igfet, misfet, mosfet, etc.) > Doping of semiconductive channel region beneath gate insulator (e.g., adjusting threshold voltage, etc.)
Description:










Sub-classes under this class:

Class Number Class Name Patents
438/290 After formation of source or drain regions and gate electrode 224
438/291 Using channel conductivity dopant of opposite type as that of source and drain 408


Patents under this class:
1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16

Patent Number Title Of Patent Date Issued
8710556 Semiconductor device comprising a Fin and method for manufacturing the same Apr. 29, 2014
8710538 Light-emitting device with a spacer at bottom surface Apr. 29, 2014
8703568 Advanced CMOS using super steep retrograde wells Apr. 22, 2014
8685810 Power layout for integrated circuits Apr. 1, 2014
8679928 Methods for stressing transistor channels of a semiconductor device structure Mar. 25, 2014
8673731 Techniques for gate workfunction engineering to reduce short channel effects in planar CMOS devices Mar. 18, 2014
8674442 Semiconductor device and manufacturing method thereof Mar. 18, 2014
8673720 Structure and fabrication of field-effect transistor having nitrided gate dielectric layer with tailored vertical nitrogen concentration profile Mar. 18, 2014
8669160 Method for manufacturing a semiconductor device Mar. 11, 2014
8669167 Techniques for metal gate workfunction engineering to enable multiple threshold voltage FINFET devices Mar. 11, 2014
8669615 Techniques for metal gate workfunction engineering to enable multiple threshold voltage FINFET devices Mar. 11, 2014
8664067 CMOS devices with reduced short channel effects Mar. 4, 2014
8659084 Techniques for gate workfunction engineering to reduce short channel effects in planar CMOS devices Feb. 25, 2014
8653604 Multiple transistor types formed in a common epitaxial layer by differential out-diffusion from a doped underlayer Feb. 18, 2014
8647951 Implantation of hydrogen to improve gate insulation layer-substrate interface Feb. 11, 2014
8642432 N-dopant for carbon nanotubes and graphene Feb. 4, 2014
8643100 Field effect transistor having multiple effective oxide thicknesses and corresponding multiple channel doping profiles Feb. 4, 2014
8643137 Short channel lateral MOSFET Feb. 4, 2014
8633550 Semiconductor device Jan. 21, 2014
8633083 Apparatus and method for a metal oxide semiconductor field effect transistor with source side punch-through protection implant Jan. 21, 2014
8633082 Method for fabricating high-gain MOSFETs with asymmetric source/drain doping for analog and RF applications Jan. 21, 2014
8633081 Modifying growth rate of a device layer Jan. 21, 2014
8633075 Semiconductor device with high voltage transistor Jan. 21, 2014
8629016 Multiple transistor types formed in a common epitaxial layer by differential out-diffusion from a doped underlayer Jan. 14, 2014
8629026 Source tip optimization for high voltage transistor devices Jan. 14, 2014
8629066 Liner formation in 3DIC structures Jan. 14, 2014
8618627 Shielded level shift transistor Dec. 31, 2013
8609496 Method of fabricating semiconductor device comprising a dummy well Dec. 17, 2013
8586442 Manufacturing method for high voltage transistor Nov. 19, 2013
8580643 Threshold voltage adjustment in a Fin transistor by corner implantation Nov. 12, 2013
8574976 Semiconductor device and manufacturing method thereof Nov. 5, 2013
8569800 Field effect transistor Oct. 29, 2013
8546882 Terminal structure for superjunction device and method of manufacturing the same Oct. 1, 2013
8536041 Method for fabricating transistor with high-K dielectric sidewall spacer Sep. 17, 2013
8536000 Method for producing a semiconductor device have fin-shaped semiconductor regions Sep. 17, 2013
8530286 Low power semiconductor transistor structure and method of fabrication thereof Sep. 10, 2013
8524562 Method for reducing Fermi-Level-Pinning in a non-silicon channel MOS device Sep. 3, 2013
8518781 Semiconductor device and manufacturing method thereof Aug. 27, 2013
8518784 Adjusting of strain caused in a transistor channel by semiconductor material provided for threshold adjustment Aug. 27, 2013
8513082 Method for fabricating an electrostatic discharge protection device Aug. 20, 2013
8513081 Carbon implant for workfunction adjustment in replacement gate transistor Aug. 20, 2013
8513080 Reducing contamination in a process flow of forming a channel semiconductor alloy in a semiconductor device Aug. 20, 2013
8507345 Semiconductor device and manufacturing method thereof Aug. 13, 2013
8497178 Semiconductor device and method for making the same Jul. 30, 2013
8486774 Thin film transistor and display device Jul. 16, 2013
8470645 Method for manufacturing an antifuse memory cell Jun. 25, 2013
8455322 Silicon germanium heterojunction bipolar transistor structure and method Jun. 4, 2013
8450814 Extended drain lateral DMOS transistor with reduced gate charge and self-aligned extended drain May. 28, 2013
8426281 Lateral metal oxide semiconductor drain extension design Apr. 23, 2013
8420489 High-performance semiconductor device and method of manufacturing the same Apr. 16, 2013

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