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Class Information
Number: 438/287
Name: Semiconductor device manufacturing: process > Making field effect device having pair of active regions separated by gate structure by formation or alteration of semiconductive active regions > Having insulated gate (e.g., igfet, misfet, mosfet, etc.) > Gate insulator structure constructed of diverse dielectrics (e.g., mnos, etc.) or of nonsilicon compound
Description: Process for making an insulated gate field effect transistor wherein the gate dielectric insulator is constructed of plural diverse dielectrics (e.g., nitride and oxide, etc.) or of a nonsilicon containing dielectric compound.










Patents under this class:
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Patent Number Title Of Patent Date Issued
6787451 Semiconductor device and manufacturing method thereof Sep. 7, 2004
6787827 Semiconductor device and method for manufacturing the same Sep. 7, 2004
6783997 Gate structure and method Aug. 31, 2004
6784057 Semiconductor device and nonvolatile semiconductor memory device comprising a plurality of semiconductor elements as well as process for the same Aug. 31, 2004
6784060 Method for fabricating high voltage and low voltage transistors Aug. 31, 2004
6780718 Transistor structure and method for making same Aug. 24, 2004
6780719 Method for annealing ultra-thin, high quality gate oxide layers using oxidizer/hydrogen mixtures Aug. 24, 2004
6780720 Method for fabricating a nitrided silicon-oxide gate dielectric Aug. 24, 2004
6777281 Maintaining LDD series resistance of MOS transistors by retarding dopant segregation Aug. 17, 2004
6777296 Semiconductor device and manufacturing method thereof Aug. 17, 2004
6773999 Method for treating thick and thin gate insulating film with nitrogen plasma Aug. 10, 2004
6774443 System and device including a barrier layer Aug. 10, 2004
6770536 Process for semiconductor device fabrication in which a insulating layer is formed on a semiconductor substrate Aug. 3, 2004
6770571 Barrier in gate stack for improved gate dielectric integrity Aug. 3, 2004
6767794 Method of making ultra thin oxide formation using selective etchback technique integrated with thin nitride layer for high performance MOSFET Jul. 27, 2004
6767795 Highly reliable amorphous high-k gate dielectric ZrOXNY Jul. 27, 2004
6767847 Method of forming a silicon nitride-silicon dioxide gate stack Jul. 27, 2004
6764927 Chemical vapor deposition (CVD) method employing wetting pre-treatment Jul. 20, 2004
6762102 Methods for manufacturing semiconductor devices and semiconductor devices Jul. 13, 2004
6759290 Stitch and select implementation in twin MONOS array Jul. 6, 2004
6756236 Method of producing a ferroelectric memory and a memory device Jun. 29, 2004
6756259 Gate insulating structure for power devices, and related manufacturing process Jun. 29, 2004
6756320 Method of forming article comprising an oxide layer on a GaAs-based semiconductor structure Jun. 29, 2004
6756647 Semiconductor device including nitride layer Jun. 29, 2004
6757208 Dual-bit nitride read only memory cell with parasitic amplifier and methods of fabricating and reading the same Jun. 29, 2004
6753229 Multiple-thickness gate oxide formed by oxygen implantation Jun. 22, 2004
6750066 Precision high-K intergate dielectric layer Jun. 15, 2004
6750102 Semiconductor non-volatile memory device having an improved write speed Jun. 15, 2004
6750159 Semiconductor apparatus, manufacturing method therefor, solid state image device and manufacturing method therefor Jun. 15, 2004
6746905 Thin film transistor and manufacturing process therefor Jun. 8, 2004
6746925 High-k dielectric bird's beak optimizations using in-situ O2 plasma oxidation Jun. 8, 2004
6743668 Process for forming a metal oxy-nitride dielectric layer by varying the flow rate of nitrogen into the chamber Jun. 1, 2004
6743681 Methods of Fabricating Gate and Storage Dielectric Stacks having Silicon-Rich-Nitride Jun. 1, 2004
6743688 High performance MOSFET with modulated channel gate thickness Jun. 1, 2004
6740901 Production of semiconductor integrated circuit May. 25, 2004
6740944 Dual-oxide transistors for the improvement of reliability and off-state leakage May. 25, 2004
6737342 Composite spacer scheme with low overlapped parasitic capacitance May. 18, 2004
6737689 FEMFET device and method for producing same May. 18, 2004
6734068 Method to form silicates as high dielectric constant materials May. 11, 2004
6734069 Method of forming a high dielectric constant insulating film and method of producing semiconductor device using the same May. 11, 2004
6727134 Method of forming a nitride gate dielectric layer for advanced CMOS devices Apr. 27, 2004
6727148 ULSI MOS with high dielectric constant gate insulator Apr. 27, 2004
6723581 Semiconductor device having a high-K gate dielectric and method of manufacture thereof Apr. 20, 2004
6716707 Method for making a semiconductor device having a high-k gate dielectric Apr. 6, 2004
6713357 Method to reduce parasitic capacitance of MOS transistors Mar. 30, 2004
6713358 Method for making a semiconductor device having a high-k gate dielectric Mar. 30, 2004
6709934 Method for forming variable-K gate dielectric Mar. 23, 2004
6706581 Dual gate dielectric scheme: SiON for high performance devices and high k for low power devices Mar. 16, 2004
6706599 Multi-bit non-volatile memory device and method therefor Mar. 16, 2004
6706643 UV-enhanced oxy-nitridation of semiconductor substrates Mar. 16, 2004

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