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Class Information
Number: 438/287
Name: Semiconductor device manufacturing: process > Making field effect device having pair of active regions separated by gate structure by formation or alteration of semiconductive active regions > Having insulated gate (e.g., igfet, misfet, mosfet, etc.) > Gate insulator structure constructed of diverse dielectrics (e.g., mnos, etc.) or of nonsilicon compound
Description: Process for making an insulated gate field effect transistor wherein the gate dielectric insulator is constructed of plural diverse dielectrics (e.g., nitride and oxide, etc.) or of a nonsilicon containing dielectric compound.
Patents under this class:
| Patent Number |
Title Of Patent |
Date Issued |
| 6657267 |
Semiconductor device and fabrication technique using a high-K liner for spacer etch stop |
Dec. 2, 2003 |
| 6653184 |
Method of forming transistors associated with semiconductor substrates comprising forming a nitrogen-comprising region across an oxide region of a transistor gate |
Nov. 25, 2003 |
| 6649538 |
Method for plasma treating and plasma nitriding gate oxides |
Nov. 18, 2003 |
| 6645854 |
Formation of a vertical junction throuph process simulation based optimization of implant doses and energies |
Nov. 11, 2003 |
| 6642105 |
Semiconductor device having multi-gate insulating layers and methods of fabricating the same |
Nov. 4, 2003 |
| 6642117 |
Method for forming composite dielectric layer |
Nov. 4, 2003 |
| 6642131 |
METHOD OF FORMING A SILICON-CONTAINING METAL-OXIDE GATE DIELECTRIC BY DEPOSITING A HIGH DIELECTRIC CONSTANT FILM ON A SILICON SUBSTRATE AND DIFFUSING SILICON FROM THE SUBSTRATE INTO THE HIGH D |
Nov. 4, 2003 |
| 6638857 |
E-beam deposition method and apparatus for providing high purity oxide films |
Oct. 28, 2003 |
| 6638877 |
Ultra-thin SiO2using N2O as the oxidant |
Oct. 28, 2003 |
| 6630393 |
Semiconductor device manufacturing method and semiconductor device manufacturing by the same method |
Oct. 7, 2003 |
| 6627500 |
Method of fabricating nitride read only memory |
Sep. 30, 2003 |
| 6627503 |
Method of forming a multilayer dielectric stack |
Sep. 30, 2003 |
| 6624093 |
Method of producing high dielectric insulator for integrated circuit |
Sep. 23, 2003 |
| 6620694 |
Method of making non volatile memory with a protective metal line |
Sep. 16, 2003 |
| 6620740 |
Methods to form electronic devices |
Sep. 16, 2003 |
| 6621123 |
Semiconductor device, and semiconductor integrated device |
Sep. 16, 2003 |
| 6617190 |
A-WO3-gate ISFET devices and method of making the same |
Sep. 9, 2003 |
| 6617210 |
Method for making a semiconductor device having a high-k gate dielectric |
Sep. 9, 2003 |
| 6613632 |
Fabrication method for a silicon nitride read-only memory |
Sep. 2, 2003 |
| 6614081 |
High-performance MOS transistor of LDD structure having a gate insulating film with a nitride central portion and oxide end portions |
Sep. 2, 2003 |
| 6610614 |
Method for uniform nitridization of ultra-thin silicon dioxide layers in transistor gates |
Aug. 26, 2003 |
| 6607957 |
Method for fabricating nitride read only memory |
Aug. 19, 2003 |
| 6607958 |
Semiconductor device and method of manufacturing the same |
Aug. 19, 2003 |
| 6605501 |
Method of fabricating CMOS device with dual gate electrode |
Aug. 12, 2003 |
| 6605503 |
Method of manufacturing a semiconductor memory device having a capacitor with improved dielectric layer |
Aug. 12, 2003 |
| 6602720 |
Single transistor ferroelectric transistor structure with high-K insulator and method of fabricating same |
Aug. 5, 2003 |
| 6602753 |
Semiconductor device having a gate insulating film comprising a metal oxide and method of manufacturing the same |
Aug. 5, 2003 |
| 6602781 |
Metal silicide gate transistors |
Aug. 5, 2003 |
| 6596584 |
Method for fabricating a self-aligned source line flash memory device |
Jul. 22, 2003 |
| 6596590 |
Method of making multi-level type non-volatile semiconductor memory device |
Jul. 22, 2003 |
| 6596595 |
Forming a conductive structure in a semiconductor device |
Jul. 22, 2003 |
| 6596596 |
Methods of forming a field effect transistors |
Jul. 22, 2003 |
| 6597046 |
Integrated circuit with multiple gate dielectric structures |
Jul. 22, 2003 |
| 6593193 |
Semiconductor device and method for fabricating the same |
Jul. 15, 2003 |
| 6593194 |
Metal-insulator-semiconductor field effect transistor having an oxidized aluminum nitride gate insulator formed on a gallium nitride or silicon substrate, and method of making the same |
Jul. 15, 2003 |
| 6583015 |
Gate technology for strained surface channel and strained buried channel MOSFET devices |
Jun. 24, 2003 |
| 6579767 |
Method for forming aluminum oxide as a gate dielectric |
Jun. 17, 2003 |
| 6579809 |
In-situ gate etch process for fabrication of a narrow gate transistor structure with a high-k gate dielectric |
Jun. 17, 2003 |
| 6580103 |
Array of flash memory cells and data program and erase methods of the same |
Jun. 17, 2003 |
| 6576967 |
Semiconductor structure and process for forming a metal oxy-nitride dielectric layer |
Jun. 10, 2003 |
| 6573197 |
Thermally stable poly-Si/high dielectric constant material interfaces |
Jun. 3, 2003 |
| 6566205 |
Method to neutralize fixed charges in high K dielectric |
May. 20, 2003 |
| 6562683 |
Bit-line oxidation by removing ONO oxide prior to bit-line implant |
May. 13, 2003 |
| 6562687 |
MIS transistor and method for making same on a semiconductor substrate |
May. 13, 2003 |
| 6562730 |
Barrier in gate stack for improved gate dielectric integrity |
May. 13, 2003 |
| 6559012 |
Method for manufacturing semiconductor integrated circuit device having floating gate and deposited film |
May. 6, 2003 |
| 6559014 |
Preparation of composite high-K / standard-K dielectrics for semiconductor devices |
May. 6, 2003 |
| 6559518 |
MOS heterostructure, semiconductor device with the structure, and method for fabricating the semiconductor device |
May. 6, 2003 |
| 6555410 |
Photodetector and device employing the photodetector for converting an optical signal into an electrical signal |
Apr. 29, 2003 |
| 6551880 |
Method of utilizing fabrication process of floating gate spacer to build twin-bit monos/sonos memory |
Apr. 22, 2003 |
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