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Class Information
Number: 438/286
Name: Semiconductor device manufacturing: process > Making field effect device having pair of active regions separated by gate structure by formation or alteration of semiconductive active regions > Having insulated gate (e.g., igfet, misfet, mosfet, etc.) > Asymmetric
Description: Process for making an insulated gate field effect transistor wherein the pair of active regions are offset or nonsymmetrical with respect to the centerline of the insulated gate electrode.
Patents under this class:
| Patent Number |
Title Of Patent |
Date Issued |
| 8709899 |
Vertical gate LDMOS device |
Apr. 29, 2014 |
| 8710587 |
Lateral double diffused metal oxide semiconductor device and method of manufacturing the same |
Apr. 29, 2014 |
| 8691653 |
Semiconductor structure with reduced surface field effect and manufacturing process thereof |
Apr. 8, 2014 |
| 8685824 |
Hybrid high voltage device and manufacturing method thereof |
Apr. 1, 2014 |
| 8686503 |
Lateral high-voltage transistor and associated method for manufacturing |
Apr. 1, 2014 |
| 8680619 |
Method of fabricating hybrid impact-ionization semiconductor device |
Mar. 25, 2014 |
| 8680620 |
Bi-directional blocking voltage protection devices and methods of forming the same |
Mar. 25, 2014 |
| 8680526 |
Electronic device, method of producing the same, and display device |
Mar. 25, 2014 |
| 8679926 |
Local charge and work function engineering on MOSFET |
Mar. 25, 2014 |
| 8674444 |
Structure and method of forming a transistor with asymmetric channel and source/drain regions |
Mar. 18, 2014 |
| 8673720 |
Structure and fabrication of field-effect transistor having nitrided gate dielectric layer with tailored vertical nitrogen concentration profile |
Mar. 18, 2014 |
| 8674437 |
Semiconductor device and method for manufacturing semiconductor device |
Mar. 18, 2014 |
| 8674442 |
Semiconductor device and manufacturing method thereof |
Mar. 18, 2014 |
| 8669160 |
Method for manufacturing a semiconductor device |
Mar. 11, 2014 |
| 8659081 |
Transistor with reduced channel length variation |
Feb. 25, 2014 |
| 8659020 |
Epitaxial silicon wafer and method for manufacturing same |
Feb. 25, 2014 |
| 8658503 |
Semiconductor device and method of fabricating the same |
Feb. 25, 2014 |
| 8652916 |
Self aligned impact-ionization MOS (I-MOS) device and methods of manufacture |
Feb. 18, 2014 |
| 8653565 |
Mixed mode multiple switch integration of multiple compound semiconductor FET devices |
Feb. 18, 2014 |
| 8647950 |
Vertical gate LDMOS device |
Feb. 11, 2014 |
| 8643090 |
Semiconductor devices and methods for manufacturing a semiconductor device |
Feb. 4, 2014 |
| 8642457 |
Method of fabricating semiconductor device |
Feb. 4, 2014 |
| 8643100 |
Field effect transistor having multiple effective oxide thicknesses and corresponding multiple channel doping profiles |
Feb. 4, 2014 |
| 8643137 |
Short channel lateral MOSFET |
Feb. 4, 2014 |
| RE44730 |
Method of manufacturing a MOSFET structure |
Jan. 28, 2014 |
| RE44720 |
Method of manufacturing a MOSFET structure |
Jan. 21, 2014 |
| 8633096 |
Creating anisotropically diffused junctions in field effect transistor devices |
Jan. 21, 2014 |
| 8633082 |
Method for fabricating high-gain MOSFETs with asymmetric source/drain doping for analog and RF applications |
Jan. 21, 2014 |
| 8633078 |
Method for manufacturing semiconductor device |
Jan. 21, 2014 |
| 8633075 |
Semiconductor device with high voltage transistor |
Jan. 21, 2014 |
| 8629498 |
Power semiconductor device and method for manufacturing the power semiconductor device |
Jan. 14, 2014 |
| 8624315 |
Field effect transistor having an asymmetric gate electrode |
Jan. 7, 2014 |
| 8614484 |
High voltage device with partial silicon germanium epi source/drain |
Dec. 24, 2013 |
| 8597991 |
Embedded silicon germanium n-type filed effect transistor for reduced floating body effect |
Dec. 3, 2013 |
| 8598000 |
Two step poly etch LDMOS gate formation |
Dec. 3, 2013 |
| 8592911 |
Asymmetric semiconductor device having a high-k/metal gate and method of manufacturing the same |
Nov. 26, 2013 |
| 8592901 |
Metal oxide semiconductor field transistor and method of fabricating the same |
Nov. 26, 2013 |
| 8580660 |
Double and triple gate MOSFET devices and methods for making same |
Nov. 12, 2013 |
| 8580678 |
Method for fabricating semiconductor device with buried gates |
Nov. 12, 2013 |
| 8575683 |
Semiconductor device and method of fabricating the same |
Nov. 5, 2013 |
| 8574991 |
Asymmetric transistor devices formed by asymmetric spacers and tilted implantation |
Nov. 5, 2013 |
| 8569138 |
Drain extended MOS transistor and method for fabricating the same |
Oct. 29, 2013 |
| 8552495 |
Dummy gate for a high voltage transistor device |
Oct. 8, 2013 |
| 8546223 |
Semiconductor device and manufacturing method of the same |
Oct. 1, 2013 |
| 8541271 |
Monolithic integration of multiple compound semiconductor FET devices |
Sep. 24, 2013 |
| 8530967 |
Lateral insulated-gate bipolar transistor and manufacturing method thereof |
Sep. 10, 2013 |
| 8525257 |
LDMOS transistor with asymmetric spacer as gate |
Sep. 3, 2013 |
| 8524547 |
Fin-type field effect transistor |
Sep. 3, 2013 |
| 8524563 |
Semiconductor device with strain-inducing regions and method thereof |
Sep. 3, 2013 |
| 8518782 |
Semiconductor device including asymmetric lightly doped drain (LDD) region, related method and design structure |
Aug. 27, 2013 |
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