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Class Information
Number: 438/286
Name: Semiconductor device manufacturing: process > Making field effect device having pair of active regions separated by gate structure by formation or alteration of semiconductive active regions > Having insulated gate (e.g., igfet, misfet, mosfet, etc.) > Asymmetric
Description: Process for making an insulated gate field effect transistor wherein the pair of active regions are offset or nonsymmetrical with respect to the centerline of the insulated gate electrode.
Patents under this class:
| Patent Number |
Title Of Patent |
Date Issued |
| 7622353 |
Method for forming recessed gate structure with stepped profile |
Nov. 24, 2009 |
| 7612619 |
Phase detector device and method thereof |
Nov. 3, 2009 |
| 7608513 |
Dual gate LDMOS device fabrication methods |
Oct. 27, 2009 |
| 7605040 |
Method of forming high breakdown voltage low on-resistance lateral DMOS transistor |
Oct. 20, 2009 |
| 7601600 |
Power semiconductor device and method for manufacturing the same |
Oct. 13, 2009 |
| 7585735 |
Asymmetric spacers and asymmetric source/drain extension layers |
Sep. 8, 2009 |
| 7582533 |
LDMOS device and method for manufacturing the same |
Sep. 1, 2009 |
| 7579245 |
Dual-gate metal-oxide-semiconductor device |
Aug. 25, 2009 |
| 7579246 |
Semiconductor device manufacturing method including oblique ion implantation process and reticle pattern forming method |
Aug. 25, 2009 |
| 7575977 |
Self-aligned LDMOS fabrication method integrated deep-sub-micron VLSI process, using a self-aligned lithography etches and implant process |
Aug. 18, 2009 |
| 7569883 |
Switching-controlled power MOS electronic device |
Aug. 4, 2009 |
| 7560348 |
Method for designing and manufacturing a PMOS device with drain junction breakdown point located for reduced drain breakdown voltage walk-in |
Jul. 14, 2009 |
| 7560324 |
Drain extended MOS transistors and methods for making the same |
Jul. 14, 2009 |
| 7557397 |
Pixel with asymmetric transfer gate channel doping |
Jul. 7, 2009 |
| 7550373 |
Method of forming a salicide layer for a semiconductor device |
Jun. 23, 2009 |
| 7550804 |
Semiconductor device and method for forming the same |
Jun. 23, 2009 |
| 7544573 |
Semiconductor device including MOS field effect transistor having offset spacers or gate sidewall films on either side of gate electrode and method of manufacturing the same |
Jun. 9, 2009 |
| 7541245 |
Semiconductor device with silicon-film fins and method of manufacturing the same |
Jun. 2, 2009 |
| 7541216 |
Method of aligning deposited nanotubes onto an etched feature using a spacer |
Jun. 2, 2009 |
| 7537999 |
Method for manufacturing a CMOS image sensor |
May. 26, 2009 |
| 7534677 |
Method of fabricating a dual gate oxide |
May. 19, 2009 |
| 7517745 |
Semiconductor device having MOSFET with offset-spacer, and manufacturing method thereof |
Apr. 14, 2009 |
| 7514763 |
Semiconductor device and manufacturing method for the same |
Apr. 7, 2009 |
| 7514330 |
Semiconductor device having an under stepped gate for preventing gate failure and method of manufacturing the same |
Apr. 7, 2009 |
| 7514325 |
Fin-FET having GAA structure and methods of fabricating the same |
Apr. 7, 2009 |
| 7514329 |
Robust DEMOS transistors and method for making the same |
Apr. 7, 2009 |
| 7510941 |
Semiconductor device and manufacturing method of the same |
Mar. 31, 2009 |
| 7507624 |
Semiconductor memory device and method of manufacturing the same |
Mar. 24, 2009 |
| 7507597 |
Method for fabricating CMOS image sensor |
Mar. 24, 2009 |
| 7498226 |
Method for fabricating semiconductor device with step gated asymmetric recess |
Mar. 3, 2009 |
| 7494882 |
Manufacturing a semiconductive device using a controlled atomic layer removal process |
Feb. 24, 2009 |
| 7491595 |
Creating high voltage FETs with low voltage process |
Feb. 17, 2009 |
| 7476591 |
Lateral power MOSFET with high breakdown voltage and low on-resistance |
Jan. 13, 2009 |
| 7465636 |
Methods for forming semiconductor wires and resulting devices |
Dec. 16, 2008 |
| 7446004 |
Method for reducing overlap capacitance in field effect transistors |
Nov. 4, 2008 |
| 7446003 |
Manufacturing process for lateral power MOS transistors |
Nov. 4, 2008 |
| 7446387 |
High voltage transistor and methods of manufacturing the same |
Nov. 4, 2008 |
| 7442613 |
Methods of forming an asymmetric field effect transistor |
Oct. 28, 2008 |
| 7432165 |
Semiconductor memory device, semiconductor device, and method for production thereof |
Oct. 7, 2008 |
| 7429512 |
Method for fabricating flash memory device |
Sep. 30, 2008 |
| 7423319 |
LDPMOS structure with enhanced breakdown voltage |
Sep. 9, 2008 |
| 7423318 |
Recessed gate structure with stepped profile |
Sep. 9, 2008 |
| 7422949 |
High voltage transistor and method of manufacturing the same |
Sep. 9, 2008 |
| 7411251 |
Self protecting NLDMOS, DMOS and extended voltage NMOS devices |
Aug. 12, 2008 |
| 7405128 |
Dotted channel MOSFET and method |
Jul. 29, 2008 |
| 7396727 |
Transistor of semiconductor device and method for fabricating the same |
Jul. 8, 2008 |
| 7385261 |
Extended drain metal oxide semiconductor transistor and manufacturing method thereof |
Jun. 10, 2008 |
| 7384845 |
Methods of fabricating flash memory devices including word lines with parallel sidewalls |
Jun. 10, 2008 |
| 7381609 |
Method and structure for controlling stress in a transistor channel |
Jun. 3, 2008 |
| 7378320 |
Method of forming asymmetric MOS transistor with a channel stopping region and a trench-type gate |
May. 27, 2008 |
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