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Class Information
Number: 438/285
Name: Semiconductor device manufacturing: process > Making field effect device having pair of active regions separated by gate structure by formation or alteration of semiconductive active regions > Having insulated gate (e.g., igfet, misfet, mosfet, etc.) > Utilizing compound semiconductor
Description: Process for making an insulated gate field effect transistor utilizing a compound semiconductor active region.
Patents under this class:
| Patent Number |
Title Of Patent |
Date Issued |
| 7622341 |
Sige channel epitaxial development for high-k PFET manufacturability |
Nov. 24, 2009 |
| 7618841 |
Hydrazine-free solution deposition of chalcogenide films |
Nov. 17, 2009 |
| 7618866 |
Structure and method to form multilayer embedded stressors |
Nov. 17, 2009 |
| 7608496 |
High speed GE channel heterostructures for field effect devices |
Oct. 27, 2009 |
| 7598145 |
Method for producing Si.sub.1-yGe.sub.y based zones with different contents in Ge on a same substrate by condensation of germanium |
Oct. 6, 2009 |
| 7598131 |
High power-low noise microwave GaN heterojunction field effect transistor |
Oct. 6, 2009 |
| 7598513 |
Si.sub.xSn.sub.yGe.sub.1-x-y and related alloy heterostructures based on Si, Ge and Sn |
Oct. 6, 2009 |
| 7595544 |
Semiconductor device and manufacturing method thereof |
Sep. 29, 2009 |
| 7566913 |
Gallium nitride material devices including conductive regions and methods associated with the same |
Jul. 28, 2009 |
| 7563680 |
Substrate having silicon germanium material and stressed silicon nitride layer |
Jul. 21, 2009 |
| 7560328 |
Strained Si on multiple materials for bulk or SOI substrates |
Jul. 14, 2009 |
| 7560326 |
Silicon/silcion germaninum/silicon body device with embedded carbon dopant |
Jul. 14, 2009 |
| 7560323 |
Compound semiconductor device and method of fabricating the same |
Jul. 14, 2009 |
| 7560318 |
Process for forming an electronic device including semiconductor layers having different stresses |
Jul. 14, 2009 |
| 7554139 |
Semiconductor manufacturing method and semiconductor device |
Jun. 30, 2009 |
| 7547591 |
Semiconductor device |
Jun. 16, 2009 |
| 7538390 |
Semiconductor device with PMOS and NMOS transistors |
May. 26, 2009 |
| 7534685 |
Method for fabrication of a capacitor, and a monolithically integrated circuit comprising such a capacitor |
May. 19, 2009 |
| 7534687 |
Semiconductor device and method for manufacturing the same |
May. 19, 2009 |
| 7531396 |
Method of manufacturing semiconductor device |
May. 12, 2009 |
| 7528040 |
Methods of fabricating silicon carbide devices having smooth channels |
May. 5, 2009 |
| 7514328 |
Method for making a semiconductor device including shallow trench isolation (STI) regions with a superlattice therebetween |
Apr. 7, 2009 |
| 7504301 |
Stressed field effect transistor and methods for its fabrication |
Mar. 17, 2009 |
| 7494881 |
Methods for selective placement of dislocation arrays |
Feb. 24, 2009 |
| 7491612 |
Field effect transistor with a heterostructure and associated production method |
Feb. 17, 2009 |
| 7476590 |
Method of manufacturing semiconductor device |
Jan. 13, 2009 |
| 7470941 |
High power-low noise microwave GaN heterojunction field effect transistor |
Dec. 30, 2008 |
| 7465619 |
Methods of fabricating dual layer semiconductor devices |
Dec. 16, 2008 |
| 7456087 |
Semiconductor device and method of fabricating the same |
Nov. 25, 2008 |
| 7449353 |
Co-doping for fermi level control in semi-insulating Group III nitrides |
Nov. 11, 2008 |
| 7446002 |
Method for making a semiconductor device comprising a superlattice dielectric interface layer |
Nov. 4, 2008 |
| 7446350 |
Embedded silicon germanium using a double buried oxide silicon-on-insulator wafer |
Nov. 4, 2008 |
| 7425488 |
Method and structure using a pure silicon dioxide hardmask for gate patterning for strained silicon MOS transistors |
Sep. 16, 2008 |
| 7419857 |
Method for manufacturing field effect transistor having channel consisting of silicon fins and silicon body and transistor structure manufactured thereby |
Sep. 2, 2008 |
| 7416931 |
Methods for fabricating a stress enhanced MOS circuit |
Aug. 26, 2008 |
| 7407859 |
Compound semiconductor device and its manufacture |
Aug. 5, 2008 |
| 7405131 |
Method and structure to prevent silicide strapping of source/drain to body in semiconductor devices with source/drain stressor |
Jul. 29, 2008 |
| 7402494 |
Method for fabricating high voltage semiconductor device |
Jul. 22, 2008 |
| 7384851 |
Buried stress isolation for high-performance CMOS technology |
Jun. 10, 2008 |
| 7384837 |
Method for isolating silicon germanium dislocation regions in strained-silicon CMOS applications |
Jun. 10, 2008 |
| 7361956 |
Semiconductor device having partially insulated field effect transistor (PiFET) and method of fabricating the same |
Apr. 22, 2008 |
| 7361559 |
Manufacturing method for a MOS transistor comprising layered relaxed and strained SiGe layers as a channel region |
Apr. 22, 2008 |
| 7344946 |
Structure for amorphous carbon based non-volatile memory |
Mar. 18, 2008 |
| 7341917 |
Solution deposition of chalcogenide films containing transition metals |
Mar. 11, 2008 |
| 7338869 |
Semiconductor device and its manufacturing method |
Mar. 4, 2008 |
| 7338867 |
Semiconductor device having contact pads and method for manufacturing the same |
Mar. 4, 2008 |
| 7323392 |
High performance transistor with a highly stressed channel |
Jan. 29, 2008 |
| 7323391 |
Substrate having silicon germanium material and stressed silicon nitride layer |
Jan. 29, 2008 |
| 7312127 |
Incorporating dopants to enhance the dielectric properties of metal silicates |
Dec. 25, 2007 |
| 7312136 |
Method of fabricating a wafer with strained channel layers for increased electron and hole mobility for improving device performance |
Dec. 25, 2007 |
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