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Class Information
Number: 438/282
Name: Semiconductor device manufacturing: process > Making field effect device having pair of active regions separated by gate structure by formation or alteration of semiconductive active regions > Having insulated gate (e.g., igfet, misfet, mosfet, etc.) > Buried channel
Description: Process for making an insulated gate field effect transistor wherein the channel formed between the source and drain regions is configured so as to be located beneath the semiconductor substrate surface.
Patents under this class:
| Patent Number |
Title Of Patent |
Date Issued |
| 7618866 |
Structure and method to form multilayer embedded stressors |
Nov. 17, 2009 |
| 7595010 |
Method for producing a doped nitride film, doped oxide film and other doped films |
Sep. 29, 2009 |
| 7595243 |
Fabrication of semiconductor structure having N-channel channel-junction field-effect transistor |
Sep. 29, 2009 |
| 7569845 |
Phase-change memory and fabrication method thereof |
Aug. 4, 2009 |
| 7563677 |
Recessed gate electrode and method of forming the same and semiconductor device having the recessed gate electrode and method of manufacturing the same |
Jul. 21, 2009 |
| 7534685 |
Method for fabrication of a capacitor, and a monolithically integrated circuit comprising such a capacitor |
May. 19, 2009 |
| 7531414 |
Method of manufacturing integrated circuit device including recessed channel transistor |
May. 12, 2009 |
| 7510955 |
Method of fabricating multi-fin field effect transistor |
Mar. 31, 2009 |
| 7494880 |
Method of manufacturing semiconductor device |
Feb. 24, 2009 |
| 7491611 |
Method and apparatus for controlling a circuit with a high voltage sense device |
Feb. 17, 2009 |
| 7482230 |
Recess channel transistor for preventing deterioration of device characteristics due to misalignment of gate layers and method of forming the same |
Jan. 27, 2009 |
| 7470587 |
Flash memory device and method of manufacturing the same |
Dec. 30, 2008 |
| 7435637 |
Quantum wire gate device and method of making same |
Oct. 14, 2008 |
| 7402483 |
Methods of forming a multi-bridge-channel MOSFET |
Jul. 22, 2008 |
| 7391098 |
Semiconductor substrate, semiconductor device and method of manufacturing the same |
Jun. 24, 2008 |
| 7344947 |
Methods of performance improvement of HVMOS devices |
Mar. 18, 2008 |
| 7338873 |
Method of fabricating a field effect transistor structure with abrupt source/drain junctions |
Mar. 4, 2008 |
| 7326619 |
Method of manufacturing integrated circuit device including recessed channel transistor |
Feb. 5, 2008 |
| 7323390 |
Semiconductor device and method for production thereof |
Jan. 29, 2008 |
| 7320919 |
Method for fabricating semiconductor device with metal-polycide gate and recessed channel |
Jan. 22, 2008 |
| 7314801 |
Semiconductor device having a surface conducting channel and method of forming |
Jan. 1, 2008 |
| 7312125 |
Fully depleted strained semiconductor on insulator transistor and method of making the same |
Dec. 25, 2007 |
| 7306993 |
Method for fabricating semiconductor device with recessed channel |
Dec. 11, 2007 |
| 7304368 |
Chalcogenide-based electrokinetic memory element and method of forming the same |
Dec. 4, 2007 |
| 7288828 |
Metal oxide semiconductor transistor device |
Oct. 30, 2007 |
| 7268045 |
N-channel LDMOS with buried P-type region to prevent parasitic bipolar effects |
Sep. 11, 2007 |
| 7265416 |
High breakdown voltage low on-resistance lateral DMOS transistor |
Sep. 4, 2007 |
| 7253060 |
Gate-all-around type of semiconductor device and method of fabricating the same |
Aug. 7, 2007 |
| 7247569 |
Ultra-thin Si MOSFET device structure and method of manufacture |
Jul. 24, 2007 |
| 7224007 |
Multi-channel transistor with tunable hot carrier effect |
May. 29, 2007 |
| 7217624 |
Non-volatile memory device with conductive sidewall spacer and method for fabricating the same |
May. 15, 2007 |
| 7176091 |
Drain-extended MOS transistors and methods for making the same |
Feb. 13, 2007 |
| 7118953 |
Process of fabricating termination region for trench MIS device |
Oct. 10, 2006 |
| 7091094 |
Method of making a semiconductor device having a gate electrode with an hourglass shape |
Aug. 15, 2006 |
| 7081390 |
Semiconductor device and a method of manufacturing the same |
Jul. 25, 2006 |
| 7081391 |
Integrated circuit devices having buried insulation layers and methods of forming the same |
Jul. 25, 2006 |
| 7074687 |
Method for forming an ESD protection device |
Jul. 11, 2006 |
| 7075829 |
Programmable memory address and decode circuits with low tunnel barrier interpoly insulators |
Jul. 11, 2006 |
| 7075155 |
Structure for protecting a semiconductor circuit from electrostatic discharge and a method for forming the structure |
Jul. 11, 2006 |
| 7074700 |
Method for isolation layer for a vertical DRAM |
Jul. 11, 2006 |
| 7067362 |
Integrated circuit with protected implantation profiles and method for the formation thereof |
Jun. 27, 2006 |
| 7052966 |
Deep N wells in triple well structures and method for fabricating same |
May. 30, 2006 |
| 7041560 |
Method of manufacturing a superjunction device with conventional terminations |
May. 9, 2006 |
| 7022560 |
Method to manufacture high voltage MOS transistor by ion implantation |
Apr. 4, 2006 |
| 7002213 |
Transistor and logic circuit on thin silicon-on-insulator wafers based on gate induced drain leakage currents |
Feb. 21, 2006 |
| 6987054 |
Method of fabricating a semiconductor device having a groove formed in a resin layer |
Jan. 17, 2006 |
| 6972461 |
Channel MOSFET with strained silicon channel on strained SiGe |
Dec. 6, 2005 |
| 6967140 |
Quantum wire gate device and method of making same |
Nov. 22, 2005 |
| 6930004 |
Self-aligned drain/channel junction in vertical pass transistor DRAM cell design for device scaling |
Aug. 16, 2005 |
| 6921913 |
Strained-channel transistor structure with lattice-mismatched zone |
Jul. 26, 2005 |
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